SPICE MODEL of TPCA8008-H (Professional+BDSP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: MOSFET (Professional Model)
PART NUMBER: TPCA8008-H
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Special Model) /
ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

2. Equivalent Circuit
D
S1
- -
+ +
R2
S
R1 10MEG DGD
10M CGD
S2
+ +
- -
Q1
S
G
S
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

3. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

4. Transconductance Characteristic s
Circuit Simulation Result
Comparison table
gfs(s)
Id(A) Measurement Simulation Error(%)
0.100 0.815 0.826 1.40
0.200 1.170 1.183 1.15
0.500 1.840 1.859 1.02
1.000 2.640 2.618 -0.84
2.000 3.680 3.656 -0.64
4.000 5.000 5.050 1.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

5. Vgs-Id Characteristics
Circuit Simulation Result
10A
8A
6A
4A
2A
0A
0V 2V 4V 6V 8V 10V
I(Vsense)
V_VGS
Evaluation circuit
Vsense
U1
TPCA8008-H
VDS
10Vdc
VGS
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

6. Comparison Graph
Circuit Simulation Result
Comparison table
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.100 3.700 3.743 1.162
0.200 3.820 3.844 0.634
0.500 4.050 4.045 -0.114
1.000 4.280 4.274 -0.143
2.000 4.600 4.598 -0.043
5.000 5.240 5.257 0.319
10.000 6.050 6.013 -0.608
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

7. Rds(on) Characteristic
Circuit Simulation result
2.00A
1.75A
1.50A
1.25A
1.00A
0.75A
0.50A
0.25A
0A
0V 250mV 500mV 750mV 940mV
I(Vsense)
V_VDS
Evaluation circuit
Vsense
U1
TPCA8008-H
VDS
10Vdc
VGS
10Vdc
0
Simulation Result
ID=2A, VGS=10V Measurement Simulation Error (%)
R DS (on) 0.47  0.47  0.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

8. Gate Charge Characteristic
Circuit Simulation result
10V
8V
6V
4V
2V
0V
0 2.5n 5.0n 7.5n 10.0n 12.5n 15.0n
V(W1:3)
Time*1mA
Evaluation circuit
U1 TPCA8008-H
Vsense
W1
+
I1
- D1 4Adc
W Dbreak
ION = 0A
I2 IOFF = 1mA
TD = 0
1m VD
I1 = 0 200Vdc
0
Simulation Result
VDD=200V,ID=4A,
Measurement Simulation Error (%)
VGS=10V
QGS nC 3.600 3.545 -1.528
QGD nC 2.255 2.220 -1.552
QG nC 10.000 10.067 0.670
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

9. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd (pF)
VDS(V) Error (%)
Measurement Simulation
0.100 708.00 710.00 -0.282
0.200 670.00 675.00 -0.741
0.500 590.00 585.00 0.855
1.000 490.00 496.00 -1.210
2.000 390.00 394.00 -1.015
5.000 269.00 266.00 1.128
10.000 195.00 198.00 -1.515
20.000 135.00 137.00 -1.460
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

10. Switching Time Characteristic
Circuit Simulation result
16V
14V
12V
10V
8V
6V
4V
2V
0V
-2V
-4V
4.94us 4.96us 5.00us 5.02us 5.06us 5.08us 5.12us
V(2) V(3)/12.5
Time
Evaluation circuit
R1 L1 L2
2 3
4.7 30nH 50nH
V1 = 0 RL
V2 = 20 V1 62.5
TD = 5u R2
TR = 10n
TF = 10n 4.7 U1 TPCA8008-H
PW = 10u
PER = 10m VDD
125Vdc
0 0 0 0
Simulation Result
ID=2A, VDD=125V
Measurement Simulation Error(%)
VGS=0/10V
td(on) ns 17.000 16.962 -0.224
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

11. Output Characteristic
Circuit Simulation result
10A
10 8.0 6.0
8A 5.7
5.5
6A
5.3
5.0
4A
4.7
2A
4.4
VGS=4.0V
0A
0V 2V 4V 6V 8V 10V
I(Vsense)
V_VDS
Evaluation circuit
Vsense
U1
TPCA8008-H
VDS
10Vdc
VGS
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

12. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
10A
1.0A
100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc TPCA8008-H
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

13. Comparison Graph
Circuit Simulation Result
Simulation Result
VDS(V)
ISD(A) %Error
Measurement Simulation
0.100 0.660 0.660 0.00
0.200 0.685 0.684 -0.07
0.500 0.718 0.719 0.15
1.000 0.750 0.749 -0.18
2.000 0.788 0.785 -0.41
5.000 0.860 0.855 -0.62
10.000 0.945 0.943 -0.16
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

14. Reverse Recovery Characteristics (Body Diode)
Circuit Simulation Result
2.0A
1.0A
0A
-1.0A
-2.0A
-3.0A
-4.0A
-5.0A
-6.0A
1.12us 1.16us 1.20us 1.24us 1.28us 1.32us 1.36us 1.40us 1.44us 1.48us 1.52us
I(R1)
Time
Evaluation Circuit
R1 7
V1 = -30V PARAMETERS:
TF = 0.28u
V2 = 30V
DTPCA8008-H
TD = 12n U1
TR = 10ns
TF = {TF} V1
VPULSE
PW = 1us
PER = 20us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trr 174 ns 174.119 ns 0.07
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

15. Reverse Recovery Characteristic (Body Diode) Reference
Trr=174ns
Conditions: di/dt=30A/us
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

16. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
100uA
90uA
80uA
70uA
60uA
50uA
40uA
30uA
20uA
10uA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
openopenopenopen open
U1
V1 Ropen
0Vdc TPCA8008-H
100MEG
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

17. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008