This document summarizes the modeling of a TOSHIBA TPCA8104 power MOSFET. It includes: 1) Details of the MOSFET components and manufacturer. 2) Descriptions of the PSpice model used and its parameters. 3) Simulation results and comparisons to measurements for key characteristics like transconductance, capacitance, switching times and more. 4) Circuit diagrams used to simulate and evaluate the MOSFET performance.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Professional)
PART NUMBER: TPCA8104
MANUFACTURER: TOSHIBA
Body Diode (Professional) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. Transconductance Characteristic
Circuit Simulation Result
70
65
60
55
50
45
40
gfs
35
30
25
20
15
10
Measurement
5
Simulation
0
0 2 4 6 8 10 12 14 16 18 20
- ID - Drain Current - A
Comparison table
gfs
- Id(A) Error(%)
Measurement Simulation
0.5 25.000 25.000 0.000
1 27.000 27.333 1.233
2 30.000 30.333 1.110
5 35.500 35.714 0.603
10 43.000 43.455 1.058
20 52.500 54.054 2.960
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Vgs-Id Characteristic
Circuit Simulation result
-100A
-80A
-60A
-40A
-20A
0A
0V -1.0V -2.0V -3.0V -4.0V -5.0V
I(V3)
V_V1
Evaluation circuit
U10 V3
0Vdc
V1
TPCA8104 V2
0 10
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Comparison Graph
Circuit Simulation Result
20
Measurement
BeeTech
MoDech
15
- ID - Drain Current - A
10
5
0
0.0 1.0 2.0 3.0 4.0 5.0
- VGS - Gate to Source Voltage - V
Simulation Result
- VGS(V)
- ID(A) Error (%)
Measurement Simulation
0.1 2.200 2.227 1.227
0.2 2.250 2.255 0.222
0.5 2.300 2.305 0.217
1 2.320 2.327 0.302
2 2.350 2.371 0.894
5 2.450 2.464 0.571
10 2.570 2.585 0.584
20 2.760 2.783 0.833
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. Rds(on) Characteristic
Circuit Simulation result
-22A
-20A
-18A
-16A
-14A
-12A
-10A
-8A
-6A
-4A
-2A
0A
0V -110mV -220mV -330mV -440mV
I(V2)
V_VDS
Evaluation circuit
U10 V2
0Vdc
0Vdc
VGS
TPCA8104 VDS
-10Vdc
0
Simulation Result
ID=-20A, VGS=-10V Measurement Simulation Error (%)
R DS (on) 0.011 0.0107 -2.707
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Gate Charge Characteristic
Circuit Simulation result
30V
25V
20V
15V
10V
5V
0V
0 20n 40n 60n 80n 100n 120n
-V(W1:4)
Time*1mA
Evaluation circuit
U10
ION = 0uA
IOFF = 1mA
W D2 I2
-
I1 = 0 + 40
I1 Dbreak
I2 = 1m W1 TPCA8104
TD = 0
TR = 10n V1
TF = 10n
PW = 600u
PER = 1000u -48
0
Simulation Result
VDD=-48V,ID=-40A
Measurement Simulation Error (%)
,VGS=-10V
Qgs(nC) 16.000 15.979 -0.131
Qgd(nC) 28.000 28.041 0.146
Qg(nC) 90.000 90.928 1.031
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
- VDS(V) Error(%)
Measurement Simulation
0.1 520.000 521.000 0.192
0.2 500.000 500.000 0.000
0.5 450.000 450.400 0.089
1 390.000 391.000 0.256
2 320.000 320.000 0.000
5 230.000 230.000 0.000
10 170.000 170.000 0.000
20 120.000 122.000 1.667
50 80.000 80.000 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. Switching Time Characteristic
Circuit Simulation result
-14V
-12V
-10V
-8V
-6V
-4V
-2V
0V
1.98us 2.00us 2.05us 2.10us 2.13us
V(L1:2) V(L2:1)/3
Time
Evaluation circuit
U10 L2 R2
1.5
50nH
-30Vdc
RG L1
PER = 2000u V1
PW = 10u
TF = 1n 30nH
TR = 1n 4.7 TPCA8104
R1
TD = 2u
V2 = 20 V2 4.7
V1 = 0
0
Simulation Result
ID=-20A, VDD=-300V
Measurement Simulation Error(%)
VGS=0/-10V
Ton(ns) 20.000 19.936 -0.320
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Output Characteristic
Circuit Simulation result
-100A
-10 -4
-6
-8 -3.8
-80A
-3.6
-60A
- 3.4
-3.2
-40A
-3
-20A
-2.8
VGS=-2.6 V
0A
0V -1.0V -2.0V -3.0V -4.0V -5.0V
I(V3)
V_V2
Evaluation circuit
U10 V3
0Vdc
V1
TPCA8104 V2
0 0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
0V 0.4V 0.8V 1.2V 1.6V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc U25
TPCA8104
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. Comparison Graph
Circuit Simulation Result
100
MoDech
BeeTech
Measurement
Drain reverse current IDR(A)
10
1
0.1
0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60
Source-Drain voltage VSD(V)
Simulation Result
VSD(V)
IDR(A) Measuremen Simulation %Error
0.1 0.595 0.590 -0.840
0.2 0.610 0.616 0.984
0.5 0.645 0.651 0.930
1 0.670 0.678 1.194
2 0.700 0.705 0.714
5 0.745 0.746 0.134
10 0.780 0.781 0.128
20 0.820 0.825 0.610
50 0.900 0.900 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
0.96us 1.04us 1.12us 1.20us 1.28us 1.36us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.4v V1
V2 = 10.6v U26
TD = 48n D8104
TF = 10ns
TR = 10ns
PW = 1us
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
Trj(ns) 14.000 14.086 0.614
Trb(ns) 69.000 69.123 0.178
Trr(ns) 83.000 83.209 0.252
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

14. Reverse Recovery Characteristic Reference
Trj=14(ns)
Trb=69(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

15. Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1
Evaluation Circuit
U25
R1
TPCA8104
R2
0.01m
100MEG
V1
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006