SPICE MODEL of TPC8028 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameter)
PART NUMBER: TPC8028
MANUFACTURER: TOSHIBA
Body Diode (Model Parameter)
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

2. Circuit Configuration
MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

3. Transconductance Characteristic
Circuit Simulation Result
35
Measurement
Simulation
30
25
20
gfs
15
10
5
0
0 1 2 3 4 5
ID : Drain Current A
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
0.200 6.082 6.250 2.762
0.500 9.518 9.804 3.005
1.000 13.570 14.085 3.795
2.000 20.333 19.802 -2.612
5.000 32.353 31.056 -4.009
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

4. Vgs-Id Characteristic
Circuit Simulation result
50A
40A
30A
20A
10A
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U1
TPC8028
Vv ariable
10Vdc
10Vdc
V2
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

5. Comparison Graph
Circuit Simulation Result
50
Measurement
Simulation
40
ID : Drain Current A
30
20
10
0
0 1 2 3 4 5 6
VGS : Gate to Source Voltage V
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.5 2.500 2.600 4.000
1 2.600 2.720 4.615
2 2.800 2.784 -0.571
5 3.000 2.906 -3.133
10 3.150 3.042 -3.429
20 3.270 3.240 -0.917
50 3.650 3.646 -0.110
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

6. Rds(on) Characteristic
Circuit Simulation result
10A
9A
8A
7A
6A
5A
4A
3A
2A
1A
0A
0V 10mV 20mV 30mV 35mV
I(V3)
V_VDS
Evaluation circuit
V3
0Vdc
U1
TPC8028 VDS
0Vdc
10Vdc
VGS
0
Simulation Result
ID=9A, VGS=10V Measurement Simulation Error (%)
R DS (on) (m) 3.500 3.502 0.057
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

7. Gate Charge Characteristic
Circuit Simulation result
20V
16V
12V
8V
4V
0V
0 10n 20n 30n 40n 50n 60n 70n
V(W1:3)
Time*1mS
Evaluation circuit
V2
0Vdc
U1
TPC8028
PER = 100u Dbreak
PW = 60u W1
TF = 10n + D1
TR = 10n I2
-
TD = 0 18Adc
I2 = 1m W
I1 = 0 I1 IOFF = 0.1mA
ION = 0uA
V1
24Vdc
0
Simulation Result
VDD=24V,ID=18A
Measurement Simulation Error (%)
,VGS=10V
Qgs(nc) 8.000 8.012 0.150
Qgd(nc) 15.000 15.000 0.000
Qg(nc) 45.000 39.518 -12.182
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.1 740.000 741.000 0.135
0.2 700.000 705.000 0.714
0.5 615.000 615.000 0.000
1 520.000 520.000 0.000
2 410.000 415.000 1.220
5 280.000 280.000 0.000
10 198.000 199.000 0.505
20 140.000 140.000 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

9. Switching Time Characteristic
Circuit Simulation result
12V
10V
8V
6V
4V
2V
0V
1.88us 1.96us 2.04us 2.12us 2.20us 2.28us
V(2) V(3)/1.5
Time
Evaluation circuit
3 L2
50n
U1
TPC8028 RL
1.67
R3 L1 2
VDD
15Vdc
V1 = 0 30nH
V2 = 20 V2 4.7
TD = 2u R2
TR = 6n
TF = 7n 4.7
PW = 2u
PER = 10u
0
Simulation Result
ID=9A, VDD=15V
Measurement Simulation Error(%)
VGS=10V
Ton(ns) 26.000 26.051 0.196
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

10. Output Characteristic
Circuit Simulation result
20A
8, 10 3.6
3.8
4 3.4V
16A 4.5
6
3.3V
12A
3.2V
8A
3.1V
4A
VGS=3.0 V
0A
0V 0.5V 1.0V 1.5V 2.0V
I(Vdsense)
V_Vvariable
Evaluation circuit
Vdsense
0Vdc
U1
TPC8028
Vv ariable
10Vdc
0Vdc
Vstep
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

11. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
1.0KA
100A
10A
1.0A
100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 TPC8028
0Vdc U1
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

12. Comparison Graph
Circuit Simulation Result
1000
Measurement
Simulation
100
Drain reverse current IDR(A)
10
1
0.1
0 0.2 0.4 0.6 0.8 1
Drain Source voltage VDS(V)
Simulation Result
VDS(V) VDS(V)
IDR(A) %Error
Measurement Simulation
0.100 0.580 0.580 0.000
0.200 0.602 0.602 -0.083
0.500 0.625 0.631 0.960
1.000 0.655 0.655 -0.076
2.000 0.681 0.680 -0.147
5.000 0.720 0.719 -0.208
10.000 0.760 0.757 -0.461
20.000 0.805 0.805 0.000
50.000 0.895 0.895 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
19.92us 20.00us 20.08us 20.16us 20.24us 20.32us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.5V V1
V2 = 10.6V
TD = 10n TPC8028
TR = 10ns U1
TF = 19ns
PW = 20us
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
Trj(ns) 24.800 24.792 -0.032
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

14. Reverse Recovery Characteristic Reference
Trj=24.8(ns)
Trb=66.4(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007