This document summarizes the modeling parameters and simulation results for a TPC8118 power MOSFET manufactured by Toshiba. It includes: 1) MOSFET model parameters such as channel length, width, transconductance, resistances, thresholds, and more. 2) Simulation results comparing measurements and simulations of characteristics like transconductance, drain current, gate charge, switching times, and more. 3) Body diode model parameters and simulation results comparing measurements and simulations of forward current, reverse recovery time, and more. 4) Circuit configurations used to simulate and evaluate the MOSFET and diode characteristics.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameter)
PART NUMBER: TPC8118
MANUFACTURER: TOSHIBA
Body Diode (Model Parameter)
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

2. Circuit Configuration
MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

3. Transconductance Characteristic
Circuit Simulation Result
Measurement
Simulation
60
50
40
gfs
30
20
10
0
0 2 4 6 8
- ID : Drain Current A
Comparison table
gfs
-Id(A) Error(%)
Measurement Simulation
0.100 3.950 4.000 1.266
0.200 6.350 6.452 1.606
0.500 9.300 9.434 1.441
1.000 12.842 13.158 2.461
2.000 18.25 18.692 2.422
5.000 28.454 29.070 2.165
10.000 34.262 34.965 2.052
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

4. Vgs-Id Characteristic
Circuit Simulation result
-50A
-40A
-30A
-20A
-10A
0A
0V -1.0V -2.0V -3.0V -4.0V -5.0V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U1
TPC8118
V2
-10
V1
-3
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

5. Comparison Graph
Circuit Simulation Result
Measurement
Simulation
40
- ID : Drain Current A
30
20
10
0
0.0 1.0 2.0 3.0 4.0 5.0
- VGS : Gate to Source Voltage V
Simulation Result
-VGS(V)
-ID(A) Error (%)
Measurement Simulation
0.100 1.850 1.825 -1.351
0.200 1.900 1.847 -2.789
0.500 1.950 1.889 -3.128
1.000 2.000 1.936 -3.200
2.000 2.100 2.011 -4.238
5.000 2.250 2.142 -4.800
10.000 2.380 2.293 -3.655
20.000 2.550 2.520 -1.176
50.000 3.000 2.960 -1.333
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

6. Rds(on) Characteristic
Circuit Simulation result
-9.0A
-8.0A
-7.0A
-6.0A
-5.0A
-4.0A
-3.0A
-2.0A
-1.0A
0A
0V -10mV -20mV -30mV -40mV -50mV
I(VD_Sense)
V_VDS
Evaluation circuit
VD_Sense
0Vdc
U1
TPC8118
VDS
10Vdc
VGS
-10Vdc
0
Simulation Result
ID=-6.5A, VGS=-10V Measurement Simulation Error (%)
R DS (on) () 0.0055 0.00549 -0.182
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

7. Gate Charge Characteristic
Circuit Simulation result
-30V
-20V
-10V
0V
0 20n 40n 60n 80n 100n
V(W1:4)
Time*1mA
Evaluation circuit
U1
TPC8118
ION = 0uA
IOFF = 1mA
W D2 I2
- Dbreak 13
+
W1
I1 = 0 I1
I2 = 1m V1
TD = 0
TR = 10n
TF = 10n -24
PW = 600u
PER = 1000u
0
Simulation Result
VDD=-24V,ID=-13A
Measurement Simulation Error (%)
,VGS=-10V
Qgs(nc) 10.000 10.105 1.050
Qgd(nc) 18.000 18.105 0.583
Qg(nc) 67.000 68.421 2.121
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.100 940.000 938.000 -0.210
0.200 900.000 905.000 0.560
0.500 820.000 822.000 0.240
1.000 720.000 719.000 -0.140
2.000 580.000 580.000 0.000
5.000 380.000 382.000 0.530
10.000 260.000 258.000 -0.770
20.000 160.000 162.000 1.250
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

9. Switching Time Characteristic
Circuit Simulation result
-20V
-15V
-10V
-5V
0V
1.88us 1.96us 2.04us 2.12us 2.20us 2.28us
V(L1:2) V(L2:2)/1.5
Time
Evaluation circuit
RL
L2 2.3
5nH
U1
TPC8118
R1 L1
PER = 200u
PW = 10u 30nH V1
TF = 1n 4.7 -15Vdc
TR = 1n R2
TD = 2u
V2 = 20 V2 4.7
V1 = 0
0
Simulation Result
ID=-6.5A, VDD=-15V
Measurement Simulation Error(%)
VGS=-10V
Ton(ns) 18.000 18.057 0.317
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

10. Output Characteristic
Circuit Simulation result
-50A -8 -6 -4
-10 -3.5 -3.3
-40A
-3
-30A
-2.8
-20A
-2.6
-10A
VGS = -2.4
V
0A
0V -1.0V -2.0V -3.0V -4.0V -5.0V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U1
TPC8118
V2
-0.5
V1
-4
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

11. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(VD_Sense)
V_VDS
Evaluation Circuit
VD_Sense
0Vdc
U1
TPC8118
VDS
10Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

12. Comparison Graph
Circuit Simulation Result
100.00
Measurement
Simulation
Drain reverse current IDR(A)
10.00
1.00
0.10
0 0.2 0.4 0.6 0.8 1 1.2
Drain - Source voltage VDS(V)
Simulation Result
VDS(V) VDS(V)
IDR(A) %Error
Measurement Simulation
0.100 0.590 0.591 0.169
0.200 0.615 0.617 0.325
0.500 0.650 0.654 0.615
1.000 0.680 0.681 0.147
2.000 0.710 0.709 -0.141
5.000 0.750 0.748 -0.267
10.000 0.780 0.782 0.256
20.000 0.820 0.817 -0.366
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
0.7us 0.9us 1.1us 1.3us 1.5us 1.7us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.5v V1
V2 = 10.6v
TD = 20n U1
TR = 1ns TPC8118
TF = 10ns
PW = 1us
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
Trj(ns) 24.000 24.275 1.146
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

14. Reverse Recovery Characteristic Reference
Trj= 24 (ns)
Trb= 142 (ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007