SPICE MODEL of 2SK3301 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of 2SK3301 (Professional+BDP Model) in SPICE PARK
1. Device Modeling Report
COMPONENTS: Power MOSFET (Professional)
PART NUMBER: 2SK3301
MANUFACTURER: TOSHIBA
Body Diode (Professional) /ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
2. MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
3. Transconductance Characteristic
Circuit Simulation Result
0.50
Measurement
Simulation
0.40
0.30
GFS (s)
0.20
0.10
0.00
0.00 0.10 0.20 0.30 0.40 0.50 0.60
DRAIN CURRENT ID (A)
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
0.050 0.143 0.145 1.469
0.100 0.205 0.205 0.098
0.200 0.286 0.291 1.608
0.500 0.427 0.431 0.937
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
15. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
0A
-400mA
16us 20us 24us 28us 32us 36us 40us 44us 48us 52us
I(RL21)
Time
Evaluation Circuit
RL21
50
V1 = -9.38
U20
V2 = 10.60
D2SK3301_PRO
V21
TD = 12.4u
TF = 10n
TR = 10n
PW = 20u
PER = 60u
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj 0.900 us 0.907 us 0.778
trb 2.800 us 2.712 us -3.143
trr 3.700 us 3.619 us -2.189
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
16. Reverse Recovery Characteristic Reference
Trj=0.90(us)
Trb=2.8(us)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
17. Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 20V 40V 60V 80V 100V 120V 140V 160V 180V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
Open
U19
V1
0Vdc
2SK3301
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006