SPICE MODEL of 2SK2698 (Professional+BDP Model) in SPICE PARK

Device Modeling Report

COMPONENTS: Power MOSFET (Professional)
PART NUMBER: 2SK2698
MANUFACTURER: TOSHIBA
Body Diode (Professional) / ESD Protection Diode

Bee Technologies Inc.

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

MOSFET MODEL

PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility


Transconductance Characteristic

Circuit Simulation Result

20

18

16

14

12
gfs

10

8

6

4

2 Measurement
Simulation
0
0 2 4 6 8 10 12 14 16 18 20
ID(A)
Comparison table

gfs
Id(A) Error(%)
Measurement Simulation
0.1 1.400 1.429 2.071
0.2 2.200 2.222 1.000
0.5 3.300 3.333 1.000
1 4.700 4.762 1.319
2 6.400 6.452 0.812
5 9.800 9.804 0.041
10 13.000 13.158 1.215
20 17.500 17.857 2.040


Vgs-Id Characteristic

Circuit Simulation result

30A

20A

10A

0A
0V 2V 4V 6V 8V 10V
I(V3)
V_V2

Evaluation circuit

V3

0Vdc

U27 Vv ariable
20Vdc
2SK2698
10Vdc

V2

0


Comparison Graph


20
Measurement
Simulation
18

16

14
ID - Drain Current - A

12

10

8

6

4

2

0
0 1 2 3 4 5 6 7 8 9 10
VGS - Gate to Source Voltage - V
Simulation Result

VGS(V)
ID(A) Error (%)
0.1 3.950 3.963 0.329
0.2 4.000 4.02 0.500
0.5 4.150 4.132 -0.434
1 4.250 4.261 0.259
2 4.450 4.446 -0.090
5 4.800 4.823 0.479
10 5.200 5.264 1.231
20 5.850 5.919 1.179


Rds(on) Characteristic


8.0A

7.0A

6.0A

5.0A

4.0A

3.0A

2.0A

1.0A

0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(V3)
V_VDS
Evaluation circuit

V3

0Vdc

U27 VDS

10Vdc 2SK2698
0Vdc

VGS

0

Simulation Result

ID=7A, VGS=10V Measurement Simulation Error (%)
R DS (on) 0.35  0.349  -0.286


Gate Charge Characteristic
20V

15V

10V

5V

0V
0 20n 40n 60n 80n 100n
V(W1:3)
Time*1mS
Evaluation circuit

V2

0Vdc

Dbreak
PER = 1000u U27
PW = 600u W1
TF = 10n + 2SK2698 D1
TR = 10n I2
TD = 0
- 15Adc
I2 = 1m W
I1 IOFF = 1mA
I1 = 0 ION = 0uA

V1
400Vdc

0

Simulation Result

VDD=400V,ID=15A
Measurement Simulation Error (%)
,VGS=10V
Qgs(nC) 15.000 14.945 -0.367
Qgd(nC) 25.000 25.055 0.220
Qg 61.000 61.758 1.243


Capacitance Characteristic

Measurement
Simulation

Simulation Result

Cbd(pF)
VDS(V) Error(%)
0.1 3090.000 3100.000 0.324
0.2 3020.000 3000.000 -0.662
0.5 2650.000 2650.000 0.000
1 2200.000 2200.000 0.000
2 1710.000 1700.000 -0.585
5 930.000 950.000 2.151
10 600.000 590.000 -1.667


Switching Time Characteristic


14V

12V

10V

8V

6V

4V

2V

0V

0.8us 1.0us 1.2us 1.4us 1.6us 1.8us
V(L2:1)/21 V(L1:2)
Time
Evaluation circuit

L2 R2

50nH
30

L1
U30
30nH
V1 = 0 2SK2698 V1
V2 = 10 V2 210Vdc
TD = 1u R3
TR = 100n
50
TF = 100n
PW = 10u
PER = 200u
0

Simulation Result

ID=7A, VDD=210V
Measurement Simulation Error(%)
VGS=0/10V
Ton(ns) 85.000 83.407 -1.874


Output Characteristic


20A

10

6
16A

5.5

12A
5.25

8A 5

4.75
4A
4.5

VGS=4V
0A
0V 10V 20V 30V 40V 50V
I(Vdsense)
V_Vvariable

Evaluation circuit

Vdsense

0Vdc

U28
Vv ariable
10Vdc 2SK2698

10Vdc

Vstep

0


Forward Current Characteristic

50A

10A

1.0A

100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
V_V1

Evaluation Circuit

R1

0.01m

2SK2698
V1
0Vdc U27

0


Comparison Graph


100
Measurement
Simulation
Drain reverse current IDR(A)

10

1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

Source-Drain voltage VSD(V)

Simulation Result

VSD(V)
IDR(A) Measuremen Simulation %Error
0.1 0.620 0.618 -0.32
0.2 0.650 0.637 -2.00
0.5 0.660 0.667 1.06
1 0.700 0.696 -0.57
2 0.730 0.731 0.14
5 0.795 0.791 -0.50
10 0.850 0.854 0.47
20 0.950 0.949 -0.11


Reverse Recovery Characteristic

400mA

300mA

200mA

100mA

-0mA

-100mA

-200mA

-300mA

-400mA
2us 3us 4us 5us 6us 7us 8us 9us 10us 11us
I(R1)
Time
Evaluation Circuit

R1

50

V1 = -9.4v V1 D2698
V2 = 10.65v
TD = 0.9u U29
TR = 10ns
TF = 13ns
PW = 5us
PER = 100us

0

Compare Measurement vs. Simulation

Measurement Simulation Error (%)
Trj(us) 1.360 1.365 0.368
Trb(us) 0.580 0.580 0.000
Trr(us) 1.940 1.945 0.258


Reverse Recovery Characteristic Reference

Trj=1.360(us)
Trb=0.580(us)
Conditions:Ifwd=lrev=0.2(A),Rl=50

Example

Relation between trj and trb


Zener Voltage Characteristic

10mA

9mA

8mA

7mA

6mA

5mA

4mA

3mA

2mA

1mA

0A
0V 10V 20V 30V 40V 50V 60V 70V 80V 90V
I(R1)
V_V1

Evaluation Circuit

R1

0.01m

V1
0Vdc
R2
U29
2SK2698
100MEG

0


Zener Voltage Characteristic Reference


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