SPICE MODEL of SSM3J113TU (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameter)
PART NUMBER: SSM3J113TU
MANUFACTURER: TOSHIBA
REMARK: P Channel Model
Body Diode (Parameter) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
1

2. Circuit Configuration
SS M3J11 3TU
MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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3. Transconductance Characteristic
Circuit Simulation Result
4
Measurement
Simulation
3
gfs (S)
2
1
0
0 0.2 0.4 0.6 0.8 1
-ID : Drain Current (-A)
Comparison table
gfs
ID(A) Error(%)
Measurement Simulation
-0.01 0.320 0.327 2.188
-0.02 0.470 0.462 -1.702
-0.05 0.725 0.729 0.552
-0.1 1.022 1.028 0.538
-0.2 1.453 1.446 -0.482
-0.5 2.280 2.266 -0.614
-1 3.233 3.172 -1.881
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
3

4. Vgs-Id Characteristic
Circuit Simulation result
-10A
-10mA
0V -0.5V -1.0V -1.5V -2.0V -2.5V
I(V3)
V_V1
Evaluation circuit
V3
0V dc
U1 V2
SS M3J11 3TU
-10
V1
-3
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
4

5. Comparison Graph
Circuit Simulation Result
10
Measurement
Simulation
1
- ID - Drain Current - A
0.1
0.01
0 0.5 1 1.5 2 2.5
- VGS - Gate to Source Voltage - V
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
-0.01 -0.993 -1.014 2.064
-0.02 -1.040 -1.039 -0.115
-0.05 -1.112 -1.089 -2.041
-0.1 -1.180 -1.146 -2.847
-0.2 -1.260 -1.227 -2.659
-0.5 -1.410 -1.388 -1.546
-1 -1.580 -1.572 -0.494
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
5

6. Rds(on) Characteristic
Circuit Simulation result
-700mA
-600mA
-500mA
-400mA
-300mA
-200mA
-100mA
0A
0V -20mV -40mV -60mV -80mV -100mV
I(V2)
V_V3
Evaluation circuit
V2
0V dc
U1
SS M3J113 TU
V3
0V dc
V1
-4
0
Simulation Result
ID=-0.65A, VGS=-4.0V Measurement Simulation Error (%)
R DS (on) (m) 129.000 129.06 0.047
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
6

7. Gate Charge Characteristic
Circuit Simulation result
-10V
-8V
-6V
-4V
-2V
0V
0 2.0n 4.0n 6.0n 8.0n 9.0n
V(W1:4)
Time*1mA
Evaluation circuit
U1
SS M3J113 TU
W
-
+ I2
D1
W1 Db re ak -1.3
IOFF = 1mA
I1 TD = 0 ION = 0
TF = 1n RO FF = 1 e6
PW = 6 00u RO N = 1.0 V1
PE R = 15 00u
I1 = 0
I2 = 1m -16
TR = 1 n
0
Simulation Result
VDD=-16V,ID=-1.3A
Measurement Simulation Error (%)
,VGS=-10V
Qgs(nC) 0.800 0.803 0.375
Qgd(nC) 1.200 1.197 -0.250
Qg(nC) 7.650 5.993 -21.665
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
7

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.5 125.000 125.500 0.400
1 103.000 102.800 -0.194
2 79.000 79.500 0.633
5 54.000 54.300 0.556
10 41.000 40.800 -0.488
20 30.000 30.000 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
8

9. Switching Time Characteristic
Circuit Simulation result
-11V
-10V
-9V
-8V
-7V
-6V
-5V
-4V
-3V
-2V
-1V
0V
1.8us 2.0us 2.2us 2.3us
V(U1:G)*4 V(U1:D)
Time
Evaluation circuit
L1 R3
30nH
16
U1
SSM3J113TU
R4
L2
30nH -10 V1
4.7
V1 = 0 V2 R2
V2 = -5
TD = 2u 4.7
TR = 10n
TF = 10n
PW = 10u
PER = 50u
0
Simulation Result
ID=-0.65A, VDD=-10V
Measurement Simulation Error(%)
VGS=-2.5V
ton(ns) 33.000 32.900 -0.303
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
9

10. Output Characteristic
Circuit Simulation result
-3.0A
-10.0V
-4.0V
-2.5V
-2.5A
-2.0V
-2.0A
-1.5A -1.8V
-1.0A
-1.6V
-0.5A
VGS= -1.4V
0A
0V -0.5V -1.0V -1.5V -2.0V
I(V3)
V_V2
Evaluation circuit
V3
0V dc
U1
SS M3J113 TU
V2
0
V1
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
10

11. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
-2.0A
-1.5A
-1.0A
-0.5A
0A
0V 0.5V 1.0V
-I(R1)
V_V1
Evaluation Circuit
R1
0.0 1m
V1
0V dc U1
SS M3J113 TU
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
11

12. Comparison Graph
Circuit Simulation Result
2
Measurement
Simulation
1.5
- Drain reverse current IDR(A)
1
0.5
0
0 0.5 1
Drain Source voltage VDS(V)
Simulation Result
VDS(V) VDS(V)
-IDR(A) %Error
Measurement Simulation
0.050 0.560 0.556 -0.732
0.100 0.595 0.598 0.504
0.200 0.648 0.647 -0.231
0.250 0.667 0.664 -0.495
0.500 0.725 0.721 -0.552
1.000 0.795 0.796 0.126
1.500 0.850 0.855 0.588
2.000 0.910 0.907 -0.385
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
12

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
19.88us 19.96us 20.04us 20.12us 20.20us 20.28us
I(RL)
Time
Evaluation Circuit
RL
50
V1 = -9 .4 V1
V2 = 10.6
TD = 3 5n U1
TR = 1 0n SS M3J113 TU
TF = 10n
PW = 2 0u
PE R = 10 0u
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
Trj(ns) 12.800 12.697 -0.805
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
13

14. Reverse Recovery Characteristic Reference
Trj=12.8(ns)
Trb=19.2(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
14

15. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
10mA
5mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1
Evaluation Circuit
U1
SS M3J113 TU
R1
R2
0.0 1m 1G
V1
0V dc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
15

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
16