SPICE MODEL of SSM3J109TU (Professional+BDP Model) in SPICE PARK
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SPICE MODEL of SSM3J109TU (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of SSM3J109TU (Professional+BDP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Professional) PART NUMBER: SSM3J109TU MANUFACTURER: TOSHIBA Body Diode (Professional) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 2. Equivalent Circuit D S - - + + R3 S2 10MEG DGD R1 CGD 10M S1 + + - - S M1 G S All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 3. MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 4. Transconductance Characteristic Circuit Simulation Result Comparison table gfs Id(A) Error(%) Measurement Simulation -0.010 0.342 0.350 2.339 -0.020 0.487 0.498 2.259 -0.050 0.776 0.789 1.675 -0.100 1.100 1.114 1.273 -0.200 1.551 1.569 1.161 -0.500 2.437 2.459 0.903 -1.000 3.428 3.442 0.408 -2.000 4.782 4.797 0.314 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 5. Vgs-Id Characteristic Circuit Simulation result -10A -10mA 0V -0.2V -0.6V -1.0V -1.4V -1.8V -2.2V I(V3) V_V1 Evaluation circuit V3 0Vdc U1 SSM3J109TU V2 -3 V1 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 6. Comparison Graph Circuit Simulation Result Simulation Result VGS(V) ID(mA) Error (%) Measurement Simulation -10.000 -0.890 -0.900 1.124 -20.000 -0.932 -0.923 -0.966 -50.000 -1.001 -0.969 -3.197 -100.000 -1.055 -1.022 -3.128 -200.000 -1.130 -1.096 -3.009 -500.000 -1.264 -1.245 -1.503 -1000.000 -1.420 -1.414 -0.423 -2000.000 -1.645 -1.657 0.729 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 7. Rds(on) Characteristic Circuit Simulation result -1.0A -0.5A 0A 0V -50mV -100mV I(V3) V_V2 Evaluation circuit V3 0Vdc U1 SSM3J109TU V2 V1 -4 0 Simulation Result ID=-1A, VGS=-4V Measurement Simulation Error (%) R DS (on) (m) 91.000 91.155 0.170 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 8. Gate Charge Characteristic Circuit Simulation result -4.0V -3.0V -2.0V -1.0V 0V 0 -0.4n -1.2n -2.0n -2.8n -3.6n V(W1:4) Time*-1mA Evaluation circuit U1 SSM3J109TU ION = 0uA IOFF = 1mA W - + I2 D2 1 W1 Dbreak I1 = 0 I1 I2 = 1m TD = 0 V1 TR = 10n TF = 10n PW = 600u -15 PER = 1000u 0 Simulation Result VDD=-15V,ID=-1A Measurement Simulation Error (%) ,VGS=-4V Qgs(nc) 0.240 0.241 0.417 Qgd(nc) 0.300 0.296 -1.333 Qg(nc) 1.280 1.279 -0.078 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 9. Gate Charge Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 10. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.100 44.000 43.800 -0.455 0.200 40.000 40.460 1.150 0.500 34.000 33.800 -0.588 1.000 28.000 27.890 -0.393 2.000 22.000 21.950 -0.227 5.000 15.000 15.280 1.867 10.000 11.500 11.430 -0.609 20.000 8.500 8.570 0.824 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 11. Switching Time Characteristic Circuit Simulation result -20V -18V -16V -14V -12V -10V -8V -6V -4V -2V 0V 1.90us 1.94us 1.98us 2.02us 2.06us 2.10us V(L1:1)*4 V(R3:2) Time Evaluation circuit L2 R3 30nH 10 U1 SSM3J109TU R1 L1 VDD PER = 200u PW = 10u 30nH -10Vdc TF = 4n 4.7 TR = 4n R2 TD = 2u V2 = 5 V2 4.7 V1 = 0 0 Simulation Result ID=-1A, VDD=-10V Measurement Simulation Error(%) VGS=-2.5V Ton(ns) 20.000 19.949 -0.255 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 12. Output Characteristic Circuit Simulation result -5.0A -10V -4V -4.0A -2.5V -3.0A -1.8V -2.0A -1.5V -1.0A VGS= -1.2V 0A 0V -0.2V -0.4V -0.6V -0.8V -1.0V I(V3) V_V2 Evaluation circuit V3 0Vdc U1 SSM3J109TU V2 V1 -1.2 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 13. Forward Current Characteristic Circuit Simulation Result 10A 1.0A 100mA 10mA 1.0mA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V I(VD_Sense) V_VDS Evaluation Circuit VD_Sense 0Vdc U1 VDS SSM3J109TU 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 14. Comparison Graph Circuit Simulation Result Simulation Result VDS(V) VDS(V) IDR(A) %Error Measurement Simulation 0.001 0.420 0.411 -2.143 0.002 0.440 0.435 -1.136 0.005 0.468 0.467 -0.214 0.010 0.490 0.492 0.408 0.020 0.510 0.519 1.765 0.050 0.550 0.561 2.000 0.100 0.590 0.599 1.525 0.200 0.640 0.644 0.625 0.500 0.715 0.710 -0.699 1.000 0.775 0.766 -1.161 2.000 0.840 0.831 -1.071 5.000 0.945 0.949 0.423 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 15. Reverse Recovery Characteristic Circuit Simulation Result 400mA 200mA 0A -200mA -400mA 0.98us 1.02us 1.06us 1.10us 1.14us 1.18us I(R1) Time Evaluation Circuit R1 50 U1 DSSM3J109TU V1 = -9.5v V1 V2 = 10.6v TD = 55n TR = 6ns TF = 6ns PW = 1us PER = 100us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) Trj(ns) 7.500 7.568 0.907 trb(ns) 9.300 9.319 0.204 trr(ns) 16.800 16.887 0.518 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 16. Reverse Recovery Characteristic Reference Trj=7.500(ns) Trb=9.300(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 17. Zener Voltage Characteristic Circuit Simulation Result 0A 1mA 2mA 3mA 4mA 5mA 6mA 7mA 8mA 9mA 10mA 50V 45V 40V 35V 30V 25V 20V 15V 10V 5V 0V I(R1) V_V1 Evaluation Circuit R1 0.01m U1 V1 R2 0Vdc 1G SSM3J109TU 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 18. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2008