SPICE MODEL of TPCF8402 (Professional+BDP Model) in SPICE PARK

Device Modeling Report

COMPONENTS: Power MOSFET (Professional)
PART NUMBER: TPCF8402
MANUFACTURER: TOSHIBA
Body Diode (Professional) / ESD Protection Diode

Bee Technologies Inc.

All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

-1-

MOSFET MODEL

PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility


-2-

P-Channel Model
Transconductance Characteristic
Circuit Simulation Result

100

Measurement
Simulation
TRANSCONDUCTANCE GFS(s)

10

1

0.1
0 0.5 1 1.5 2

- DRIAN CURRENT ID (A)

Comparison table

gfs
- Id(A) Error(%)
Measurement Simulation
0.200 2.11 2.20 4.41
0.500 3.33 3.45 3.46
1.000 4.65 4.78 2.87
2.000 6.56 6.62 1.00


-3-

P-Channel Model
Vgs-Id Characteristic

Circuit Simulation result

-4.0A

-3.0A

-2.0A

-1.0A

0A
0V -0.5V -1.5V -2.5V -3.5V -4.5V
I(V3)
V_VGS

Evaluation circuit

open open

open open V3

0Vdc open

V1 R1
VGS
100MEG
-10Vdc
0Vdc

0

0


-4-

P-Channel Model
Comparison Graph


4
Measurement
Simulation

3
- Drain Current ID (A)

2

1

0
0 1 2 3 4 5
- Gate - Source Voltage VGS (V)

Simulation Result

- VGS(V)
- ID(A) Error (%)
0 1.8000 1.8000 0.0000
0.1 1.9200 1.9036 -0.8542
0.2 1.9700 1.9580 -0.6091
0.5 2.0500 2.0670 0.8293
1 2.2000 2.1914 -0.3909
2 2.3500 2.3705 0.8723
3 2.5000 2.5104 0.4160
4 2.6300 2.6300 0.0000


-5-

P-Channel Model
Rds(on) Characteristic


-1.5A

-1.0A

-0.5A

0A
0V -20mV -60mV -100mV -140mV -180mV
I(V3)
V_VDS
Evaluation circuit

open open

open open V3

0Vdc open

VGS VDS R1
100MEG
-10Vdc 0Vdc

0

0

Simulation Result

ID=-1.6A, VGS=-10V Measurement Simulation Error (%)
R DS (on) 60 m 60 m 0.000


-6-

P-Channel Model
Gate Charge Characteristic

-10V

-8V

-6V

-4V

-2V

0V
0 2n 4n 6n 8n 10n 12n 14n 16n
V(W1:4)
Time*1mA

Evaluation circuit

open open

open open

IOFF = 1mA open
ION = 0A
W
- I1
TD = 0 + Dbreak Ropen
I2 D1 -4Adc
W1 100MEG

VD
-24Vdc 0

0

Simulation Result

VDD=-24V,ID=-3.2A Measurement Simulation Error (%)
Qgs 1.400 nC 1.394 nC -0.429
Qgd 2.700 nC 2.701 nC 0.037
Qg 14.000 nC 14.042 nC 0.300


-7-

P-Channel Model
Capacitance Characteristic

Simulation Result

Cbd(pF)
- VDS(V) Error(%)
0.5 15.000 15.051 0.340
1 12.000 12.026 0.216
2 10.000 10.187 1.872
5 7.600 7.599 -0.014
10 6.000 6.124 2.070
20 5.000 5.059 1.175
30 4.500 4.566 1.463


-8-

P-Channel Model
Switching Time Characteristic


-20V

-18V

-16V

-14V
___ VOUT/1.5 ___ VGS
-12V

-10V

-8V

-6V

-4V

-2V

0V

2V

4V

6V

8V
0.92us 0.96us 1.00us 1.04us 1.08us 1.12us
V(3)/1.5 V(L3:1)
Time

Evaluation circuit

open open

open open
RL
3
R1 L3
2 9.38
open
30nH
4.7
V1 = 0
V2 = -20 R2
TD = 1u V1 Ropen
TR = 10n 4.7
TF = 10n VD 100MEG
PW = 10u -15Vdc
PER = 10m

0

0

Simulation Result

ID= -1.6A, VDD=-15V
Measurement Simulation Error(%)
VGS=0/-10V
ton 12.000 ns 11.984 ns -0.133


-9-

P- Channel Model
Output Characteristic

-10A
-10V -3.5V
-6.0V

-8A -4.5V

-6A
-2.8V

-2.7V
-4A
-2.6V

-2.5V

-2A
VGS=-2.3V

0A
0V -1.0V -2.0V -3.0V -4.0V -5.0V
I(V3)
V_V1

Evaluation circuit

open open

open open V3

0Vdc open

V1 R1
VGS
100MEG
-10Vdc
0Vdc

0

0


- 10 -

P-Channel Model
Forward Current Characteristic


10A

1.0A

500mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V
I(R1)
V_V1

Evaluation Circuit

R1

0.01m
openopen open

V1 Ropen
100MEG
TPCF8402
0Vdc
U1

openopen 0

0


- 11 -

P-Channel Model
Comparison Graph


10
Measurement
Simulation
Drain reverse Current - IDR (A)

1

0.1
0 0.3 0.6 0.9 1.2 1.5

Drain - Source Voltage VDS (V)

Simulation Result

VSD(V)
IDR(A) Measuremen Simulation %Error
0.5 0.7300 0.7382 1.1214
1 0.7800 0.7830 0.3846
2 0.8350 0.8399 0.5868
5 0.9500 0.9547 0.4947
10 1.108 1.1062 -0.1625


- 12 -

P-Channel Model
Reverse Recovery Characteristic


400mA

0A

-400mA
0.98us 0.99us 1.00us 1.01us 1.02us 1.03us 1.04us 1.05us 1.06us 1.07us
I(R1)
Time

Evaluation Circuit

R1 50
0

V1 = -9.6V V1
A

V2 = 10.8V
TD = 0
TR = 10ns U2
K

TF = 5.7ns DF8402_P_PRO
PW = 1us
PER = 50us
1

0

Compare Measurement vs. Simulation

Measurement Simulation Error (%)
trj 7.800 ns 7.774 ns -0.333
trb 9.800 ns 9.737 ns -0.643
trr 17.600 ns 17.511 ns -0.506


- 13 -

P-Channel Model
Reverse Recovery Characteristic Reference

Trj=7.8(ns)
Trb=9.8(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50

Example

Relation between trj and trb


- 14 -

P-Channel Model
ESD PROTECTION DIODE
Zener Voltage Characteristic

10mA

5mA

0A
0V 25V 50V
I(R1)
V_V1
Evaluation Circuit

R1

0.01m
open
open
V1
open
0Vdc
Ropen
open
100MEG
open

open 0

0


- 15 -

P-Channel Model
Zener Voltage Characteristic Reference


- 16 -

N-Channel Model
Transconductance Characteristic

100
Measurement
Simulation
TRANSCONDUCTANCE GFS(s)

10

1

0.1
0 0.5 1 1.5 2
DRIAN CURRENT ID (A)

Comparison table

gfs
Id(A) Error (%)
0.200 2.11 2.13 1.08
0.500 3.33 3.31 -0.66
1.000 4.76 4.63 -2.78
2.000 6.70 6.43 -4.02


- 17 -

N-Channel Model
Vgs-Id Characteristic

8.0A

7.0A

6.0A

5.0A

4.0A

3.0A

2.0A

1.0A

0A
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V
I(Vsense)
V_VGS

Evaluation circuit

U1 TPCF8402
0Vdc V3

open

open open
V1 R1
open open
VGS
100MEG
10Vdc
0Vdc

0

0


- 18 -

Comparison Graph

8
Measurement
Simulation

6
Drain Current ID (A)

4

2

0
0 1 2 3 4 5

Gate - Source Voltage VGS (V)

Simulation Result

VGS(V)
ID(A) Error (%)
0 2.3000 2.3000 0.0000
0.1 2.5200 2.5409 0.8294
0.2 2.6000 2.5971 -0.1115
0.5 2.7000 2.7096 0.3556
1 2.8300 2.8381 0.2862
2 3.0150 3.0227 0.2554
5 3.4000 3.3991 -0.0265
8 3.6800 3.6788 -0.0326


- 19 -

N-Channel Model
Rds(on) Characteristic


2.0A

1.8A

1.6A

1.4A

1.2A

1.0A

0.8A

0.6A

0.4A

0.2A

0A
0V 25mV 50mV 75mV 100mV 125mV 150mV 175mV
I(Vsense)
V_VDS

Evaluation circuit

U1 TPCF8402
0Vdc V3

open

open open
VDS R1
open open
VGS
100MEG
0Vdc
10Vdc

0

0

Simulation Result

ID=2.0A, VGS=10V Measurement Simulation Error (%)
R DS (on) 38.000 m 38.005 m 0.013

- 20 -

N-Channel Model
Gate Charge Characteristic

15V

10V

5V

0V
0 4n 8n 12n 16n
V(W1:3)
Time*1mA

Evaluation circuit

U1 TPCF8402
Vsense

open
open open
W1
+ I1
open open
D1 Ropen
-
Dbreak 4Adc
I2 W 100MEG
TD = 0 ION = 0A
IOFF = 1mA

VD 0
24Vdc

0

Simulation Result

VDD=24V,ID=4.0A Measurement Simulation Error (%)
Qgs 1.700 nC 1.698 nC -0.118
Qgd 2.400 nC 2.413 nC 0.554
Qg 14.000 nC 13.972 nC -0.200


- 21 -

N-Channel Model
Capacitance Characteristic

Measurement
Simulation

Simulation Result

Cbd(pF)

VDS(V) Measurement Simulation Error(%)
0.1 140.0000 141.0000 0.7143
0.2 108.0000 107.5000 -0.4630
0.5 70.0000 69.5000 -0.7143
1 50.0000 49.8875 -0.2250
2 35.0000 34.6560 -0.9829
5 21.0000 20.9978 -0.0105
10 14.0000 14.5679 4.0563
20 9.5000 9.6499 1.5774
30 7.5000 7.3527 -1.9642


- 22 -

N-Channel Model
Switching Time Characteristic


14V

13V

12V

11V

10V

9V
___ VOUT/1.5 ___ VGS
8V

7V

6V

5V

4V

3V

2V

1V

0V

-1V
0.92us 0.96us 1.00us 1.04us 1.08us 1.12us
V(2) V(3)/1.5
Time
Evaluation circuit

RL
3
R1 L3
2 7.5 open
30nH
4.7
open open
V1 = 0
V2 = 20 R2 Ropen
open open
TD = 1u V1
TR = 10n 4.7 VD 100MEG
TF = 10n 15Vdc
PW = 10u
PER = 10m 0

0

Simulation Result

ID= 2.0A, VDD=15V
Measurement Simulation Error(%)
VGS=0/10V
ton 8.300 ns 8.3031 ns 0.037


- 23 -

N-Channel Model
Output Characteristic


5.0A
10V 4.0V 3.8V
4.5A 3.5V

4.0A 8.0V 6.0V

3.5A

3.0A
3.2 V
2.5A

2.0A

1.5A
3.0V
1.0A

0.5A
VGS= 2.8V
0A
0V 0.1V 0.2V 0.3V 0.4V 0.5V 0.6V 0.7V 0.8V 0.9V 1.0V
I(Vsense)
V_VDS
Evaluation circuit

U1 TPCF8402
0Vdc V3

open

open open
V1 R1
open open
VGS
100MEG
10Vdc
0Vdc

0

0


- 24 -

N-Channel Model
BODY DIODE Forward Current Characteristic

10A

1.0A

100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
V_V1

Evaluation Circuit

R1

0.01m
openopen open

U1
V1 Ropen
TPCF8402
100MEG
0Vdc

openopen 0

0


- 25 -

N-Channel Model
Comparison Graph


10
Measurement
Simulation
Drain reverse Current - IDR (A)

1

0.1
0 0.3 0.6 0.9 1.2 1.5
Drain - Source Voltage VDS (V)

Simulation Result

VSD(V)
IDR(A) %Error
0.1 0.7000 0.6998 -0.0286
0.2 0.7200 0.7190 -0.1389
0.5 0.7500 0.7492 -0.1067
1 0.7800 0.7793 -0.0897
2 0.8200 0.8213 0.1585
5 0.9100 0.9089 -0.1209
10 1.02 1.0204 0.0392


- 26 -

N-Channel Model
Reverse Recovery Characteristic

400mA

0A

-400mA
0.98us 0.99us 1.00us 1.01us 1.02us 1.03us 1.04us 1.05us 1.06us 1.07us
I(R1)
Time
Evaluation Circuit

R1 50

V1 = -9.6V V1
V2 = 10.8V
TD = 0
TR = 10ns
TF = 5.7ns
PW = 1us
PER = 50us

0

Compare Measurement vs. Simulation

Measurement Simulation Error (%)
trj 8.800 ns 8.832 ns 0.364
trb 9.800 ns 9.799 ns -0.010
trr 18.600 ns 18.631 ns 0.167


- 27 -

N-Channel Model
Reverse Recovery Characteristic Reference

Trj=8.80(ns)
Trb=9.80(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50

Example

Relation between trj and trb

- 28 -

N-Channel Model
Zener Voltage Characteristic

10mA

9mA

8mA

7mA

6mA

5mA

4mA

3mA

2mA

1mA

0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1

Evaluation Circuit

R1

0.01m open
open
V1
open
0Vdc Ropen
open 100MEG
U1
open
TPCF8402
0
open

0


- 29 -

N-Channel Model
Zener Voltage Characteristic Reference


- 30 -

SPICE MODEL of TPCF8402 (Professional+BDP Model) in SPICE PARK

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