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Device Modeling ReportCOMPONENTS: MOSFET (Professional)PART NUMBER: 2SK4021MANUFACTURER: TOSHIBAREMARK: N Channel ModelBod...
Equivalent Circuit                                                                        D                               ...
MOSFET MODELPspice model                                      Model description parameter  LEVEL      L        Channel Len...
Transconductance CharacteristicCircuit Simulation ResultComparison table                                        gfs       ...
Vgs-Id CharacteristicCircuit Simulation result         2.0A         1.0A        100mA             0V                      ...
Comparison GraphCircuit Simulation ResultSimulation Result                                         VGS(V)           ID(A) ...
Rds(on) CharacteristicCircuit Simulation result         2.5A         2.0A         1.0A           0A             0V        ...
Gate Charge CharacteristicCircuit Simulation result        10V         5V         0V           0s             2ns         ...
Capacitance Characteristic                                                         Measurement                            ...
Switching Time CharacteristicCircuit Simulation result        20V        10V         0V         1.9us                     ...
Output CharacteristicCircuit Simulation result        10A                                                                 ...
Forward Current CharacteristicCircuit Simulation Result         10A        1.0A       100mA            0V     0.2V   0.4V ...
Comparison GraphCircuit Simulation ResultSimulation Result                           VDS(V)                     VDS(V)    ...
Reverse Recovery CharacteristicCircuit Simulation Result         400mA         200mA            0A        -200mA        -4...
Reverse Recovery Characteristic                                        ReferenceTrj=388(ns)Trb=288(ns)Conditions:Ifwd=lrev...
Zener Voltage CharacteristicCircuit Simulation Result        10mA         5mA          0A            0V      5V    10V    ...
Zener Voltage Characteristic                                         Reference            All Rights Reserved Copyright (c...
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SPICE MODEL of 2SK4021 (Professional+BDP Model) in SPICE PARK

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SPICE MODEL of 2SK4021 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of 2SK4021 (Professional+BDP Model) in SPICE PARK

  1. 1. Device Modeling ReportCOMPONENTS: MOSFET (Professional)PART NUMBER: 2SK4021MANUFACTURER: TOSHIBAREMARK: N Channel ModelBody Diode (Professional) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 1
  2. 2. Equivalent Circuit D S1 - - + + R2 S R1 10MEG DGD 10M CGD S2 + + - - Q1 S G S All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 2
  3. 3. MOSFET MODELPspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 3
  4. 4. Transconductance CharacteristicCircuit Simulation ResultComparison table gfs Id(A) Error(%) Measurement Simulation 0.100 0.800 0.806 0.750 0.200 1.111 1.130 1.710 0.500 1.767 1.779 0.679 1.000 2.439 2.500 2.501 2.000 3.421 3.503 2.397 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 4
  5. 5. Vgs-Id CharacteristicCircuit Simulation result 2.0A 1.0A 100mA 0V 2.0V 4.0V 6.0V I(V3) V_V1Evaluation circuit V3 0Vdc U1 V2 2SK4021 V1 10 5.8 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 5
  6. 6. Comparison GraphCircuit Simulation ResultSimulation Result VGS(V) ID(A) Error (%) Measurement Simulation 0.01 2.850 2.990 4.912 0.02 2.935 3.023 2.998 0.05 3.075 3.089 0.455 0.1 3.200 3.163 -1.156 0.2 3.350 3.269 -2.418 0.5 3.590 3.479 -3.092 1 3.825 3.718 -2.797 2 4.145 4.059 -2.075 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 6
  7. 7. Rds(on) CharacteristicCircuit Simulation result 2.5A 2.0A 1.0A 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(V2) V_V3Evaluation circuit V2 0Vdc U1 V3 0Vdc 2SK4021 V1 10 0Simulation Result ID=2.5 A, VGS=10V Measurement Simulation Error (%) R DS (on) () 0.8 0.8 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 7
  8. 8. Gate Charge CharacteristicCircuit Simulation result 10V 5V 0V 0s 2ns 4ns 6ns 8ns 10ns V(W1:3) Time*1mEvaluation circuit U1 ION = 0 IOFF = 100u W1 + 2SK4021 I2 D1 - Dbreak W 4.5 I1 = 0 I1 I2 = 1m TD = 0 V1 TR = 10n TF = 10n PW = 200u PER = 500u 200 0Simulation Result VDD=200V,ID=4.5A ,VGS=10V Measurement Simulation Error (%) Qgs(nc) 2.0000 2.0000 0.000 Qgd(nc) 3.5000 3.5038 0.109 Qg(nc) 10.000 10.000 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 8
  9. 9. Capacitance Characteristic Measurement SimulationSimulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.1 265 264.7 -0.113 0.2 260 259.6 -0.154 0.5 245 245.3 0.122 1 225 224.7 -0.133 2 190 192 1.053 5 135 133 -1.481 10 87 87 0.000 20 50 51 2.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 9
  10. 10. Switching Time CharacteristicCircuit Simulation result 20V 10V 0V 1.9us 2.0us 2.1us 2.2us V(U1:G) V(U1:D)/10 TimeEvaluation circuit L1 R2 50nH U1 40 R5 L2 V1 50 V1 = 0 30nH V2 = 20 V2 2SK4021 100 TD = 2u R4 TR = 6n TF = 7n 50 PW = 10u PER = 30u 0Simulation Result ID=2.5A, VDD=100V VGS=10V Measurement Simulation Error(%) Ton(ns) 20.00 20.207 1.035 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 10
  11. 11. Output CharacteristicCircuit Simulation result 10A 5.5V 8A 5V 6A 4A 4.5V 2A VGS=4.0 V 0A 0V 20V 30V I(Vdsense) V_VvariableEvaluation circuit Vdsense 0Vdc U1 2SK4021 Vv ariable Vstep 20 4 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 11
  12. 12. Forward Current CharacteristicCircuit Simulation Result 10A 1.0A 100mA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V I(R1) V_V1Evaluation Circuit R1 0.01m V1 0Vdc U1 2SK4021 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 12
  13. 13. Comparison GraphCircuit Simulation ResultSimulation Result VDS(V) VDS(V) IDR(A) %Error Measurement Simulation 0.100 0.675 0.672 -0.444 0.200 0.700 0.704 0.571 0.500 0.750 0.752 0.267 1.000 0.810 0.803 -0.864 2.000 0.875 0.877 0.229 5.000 1.050 1.049 -0.095 10.000 1.350 1.288 -4.593 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 13
  14. 14. Reverse Recovery CharacteristicCircuit Simulation Result 400mA 200mA 0A -200mA -400mA 12.0us 13.6us 15.2us 16.8us 18.4us 20.0us I(RL) TimeEvaluation Circuit RL 50 U1 V1 = -9.315 V1 D2SK4021 V2 = 10.72 TD = 0 TR = 10n TF = 10n PW = 15u PER = 100u 0Compare Measurement vs. Simulation Measurement Simulation Error (%) Trj(us) 328.000 328.109 0.033 Trb(us) 288.000 288.879 0.305 Trr(us) 616.000 616.988 0.160 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 14
  15. 15. Reverse Recovery Characteristic ReferenceTrj=388(ns)Trb=288(ns)Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Example Relation between trj and trb Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 15
  16. 16. Zener Voltage CharacteristicCircuit Simulation Result 10mA 5mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) V_V1Evaluation Circuit U1 R1 0.01m R2 2SK4021 V1 1G 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 16
  17. 17. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 17

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