This document provides a device modeling report for a Power MOSFET and includes: 1) Specifications and parameters for the MOSFET SPICE model. 2) Simulation results and comparisons to measurement data for key MOSFET characteristics like transconductance, Vgs-Id, Rds(on), capacitance, switching times and more. 3) Specifications and simulation results for the body diode and ESD protection diode models.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Professional)
PART NUMBER: 2SJ511
MANUFACTURER: TOSHIBA
Body Diode (Professional) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

2. MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

3. Transconductance Characteristic
Circuit Simulation Result
2.0
Measurement
Simulation
1.6
1.2
gfs
0.8
0.4
0.0
0.0 0.2 0.4 0.6 0.8
- ID : Drain Current A
Comparison table
gfs
-Id(A) Error(%)
Measurement Simulation
0.010 0.083 0.085 2.410
0.020 0.143 0.142 -0.699
0.050 0.250 0.248 -0.800
0.100 0.420 0.430 2.381
0.200 0.667 0.680 1.949
0.500 1.250 1.278 2.240
1.000 1.449 1.495 3.175
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

4. Vgs-Id Characteristic
Circuit Simulation result
-2.0A
-1.6A
-1.2A
-0.8A
-0.4A
0A
0V -0.5V -1.0V -1.5V -2.0V -2.5V -3.0V -3.5V -4.0V -4.5V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U1 V2
2SJ511
V1 -10
-3
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

5. Comparison Graph
Circuit Simulation Result
2.0
Measurement
Simulation
1.6
- ID : Drain Current A
1.2
0.8
0.4
0.0
0.0 1.0 2.0 3.0 4.0 5.0
- VGS : Gate to Source Voltage V
Simulation Result
-VGS(V)
-ID(A) Error (%)
Measurement Simulation
0.010 1.800 1.887 4.833
0.020 1.900 1.938 2.000
0.050 2.000 2.041 2.050
0.100 2.100 2.175 3.571
0.200 2.300 2.351 2.217
0.500 2.700 2.703 0.111
1.000 3.050 3.099 1.607
2.000 3.650 3.666 0.438
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

6. Rds(on) Characteristic
Circuit Simulation result
-1.0A
-0.5A
0A
0V -200mV -400mV -500mV
I(VD_Sense)
V_VDS
Evaluation circuit
VD_Sense
0Vdc
U1
2SJ511
VGS VDS
10Vdc
-10Vdc
0
Simulation Result
ID=-1A, VGS=-10V Measurement Simulation Error (%)
R DS (on) () 0.320 0.320 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

7. Gate Charge Characteristic
Circuit Simulation result
-10V
-8V
-6V
-4V
-2V
0V
0 2n 4n 6n 8n 10n
V(W1:4)
Time*1mA
Evaluation circuit
ION = 0uA
IOFF = 1mA
W
- U1
+ 2SJ511
W1 D2 I2
I1 = 0 I1 Dbreak 2
I2 = 1m
TD = 0
TR = 10n V1
TF = 10n
PW = 600u
PER = 1000u -24
0
Simulation Result
VDD=-24V,ID=-2A Measurement Simulation Error (%)
,VGS=-10V
Qgs(nc) 1.000 1.016 1.600
Qgd(nc) 1.200 1.219 1.583
Qg(nc) 10.000 10.028 0.280
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.100 110.000 109.500 -0.450
0.200 105.000 105.000 0.000
0.500 95.000 95.100 0.110
1.000 85.000 85.500 0.590
2.000 75.000 75.200 0.270
5.000 62.000 61.500 -0.810
10.000 53.000 52.800 -0.380
20.000 45.000 45.000 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

9. Switching Time Characteristic
Circuit Simulation result
-20V
-15V
-10V
-5V
0V
1.6us 1.8us 2.0us 2.2us 2.4us 2.6us
V(L1:2)*1.5 V(R2:2)
Time
Evaluation circuit
R2
L2 15
50nH
R3 L1
U1
PER = 200u 2SJ511
PW = 10u 30nH V1
TF = 1n 50 -15Vdc
TR = 1n R1
TD = 2u
V2 = 20 V2 50
V1 = 0
0
Simulation Result
ID=-1A, VDD=-15V
Measurement Simulation Error(%)
VGS=-10V
Ton(ns) 45.000 45.245 0.544
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

10. Output Characteristic
Circuit Simulation result
-2.0A -8-6-5 -4
-10
-3.8
-3.5
-1.6A
-3.3
-1.2A
-3
-0.8A
-2.8
V
-0.4A VGS= -2.5V
V
0A
0V -2V -4V -6V -8V -10V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U1
2SJ511 V2
-0.5
V1
-4
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

11. Forward Current Characteristic
Circuit Simulation Result
10A
1.0A
100mA
10mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(VD_Sense)
V_VDS
Evaluation Circuit
VD_Sense
0Vdc
U1
2SJ511
VDS
10Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

12. Comparison Graph
Circuit Simulation Result
10.00
Measurement
Simulation
Drain reverse current IDR(A)
1.00
0.10
0.01
0 0.2 0.4 0.6 0.8 1 1.2
Drain - Source voltage VDS(V)
Simulation Result
VDS(V) VDS(V)
IDR(A) %Error
Measurement Simulation
0.010 0.615 0.616 0.163
0.020 0.642 0.641 -0.156
0.050 0.675 0.672 -0.444
0.100 0.698 0.696 -0.287
0.200 0.725 0.724 -0.138
0.500 0.765 0.768 0.392
1.000 0.820 0.819 -0.122
2.000 0.895 0.894 -0.112
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
0.84us 0.92us 1.00us 1.08us 1.16us 1.24us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.4v V1
V2 = 10.7v U1
TD = 2n D2SJ511
TR = 1ns
TF = 1ns
PW = 1us
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj(ns) 15.200 15.188 -0.079
trb(ns) 20.800 20.866 0.317
trr(ns) 36.000 36.054 0.150
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

14. Reverse Recovery Characteristic Reference
Trj=15.2 (ns)
Trb=20.8 (ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

15. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m U1
2SJ511
V1
0Vdc
R2
100MEG
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008