2. DIODE MODEL
Pspice model
Model description
Parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
3. IG-VT Characteristic
Evaluation Circuit
Rload
10
A
U1
Vak
G
SF3G48
6Vdc
Ig K
0Adc
0
Simulation result
Simulation
Comparison Table
Measurement Simulation % Error
IG (Max 10) (mA) 9.5 9.551 -0.537
VT (Max 1 )(V) 0.63 0.638 -1.270
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
4. ITM-VTM Characteristic
Evaluation Circuit
Rload
A
24
U1
G
SF3G48
Vak
0Vdc
Ig K
20mAdc
0
Simulation result
Simulation
Comparison Table
At ITM=12A Measurement Simulation % Error
VTM(V) Max 1.5 1.4835 1.100
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
5. Holding Characteristic (IH)
Evaluation Circuit
Rload
5.315
A
U1
Rg SF3G48 Vak
G
VOFF = 0
FREQ = 50
VAMPL = 6
V1 = 0 1k
K
V2 = 15V V1
TD = 5ms
TR = 1us
TF = 1us
PW = 1ms
PER = 20ms
0
Simulation result
Simulation
Comparison Table
VAK=6V,ITM=1A Measurement Simulation % Error
IH(mA) Max 40 40 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004