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Device Modeling Report




COMPONENTS: DARLINGTON TRANSISTOR
PART NUMBER: 2SD2049
MANUFACTURER: SANYO




                 Bee Technologies Inc.


   All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
BIPOLAR JUNCTION TRANSISTOR MODEL
  PSpice
   model                                Model description
 parameter
     IS       Saturation Current
     BF       Ideal Maximum Forward Beta
     NF       Forward Current Emission Coefficient
    VAF       Forward Early Voltage
    IKF       Forward Beta Roll-off Knee Current
    ISE       Non-ideal Base-Emitter Diode Saturation Current
    NE        Non-ideal Base-Emitter Diode Emission Coefficient
    BR        Ideal Maximum Reverse Beta
    NR        Reverse Emission Coefficient
    VAR       Reverse Early Voltage
    IKR       Reverse Beta Roll-off Knee Current
    RE        Emitter Resistance
    RB        Base Resistance
    RC        Series Collector Resistance
    CJE       Zero-bias Emitter-Base Junction Capacitance
    VJE       Emitter-Base Junction Potential
    MJE       Emitter-Base Junction Grading Coefficient
    CJC       Zero-bias Collector-Base Junction Capacitance
    VJC       Collector-base Junction Potential
   MJC        Collector-base Junction Grading Coefficient
     TF       Forward Transit Time
     TR       Reverse Transit Time
    XTB       Forward Beta Temperature Coefficient




             All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
DIODE MODEL
 PSpice model
                                       Model description
  parameter
      IS        Saturation Current
      RS        Series Resistance
     CJO        Zero-bias Junction Capacitance
      BV        Reverse Breakdown Voltage(a positive value)
     IBV        Reverse Breakdown Current(a positive value)
      TT        Transit Time




           All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
Ic-hFE Characteristics

Simulation result




                                                   Simulation




Evaluation Circuit


                                                        V2


                                                             0Vdc


                     V3
                                               C




                                    B
                            0Vdc
                                    R1    R2            U6     3Vdc
                                                                      V1
                                               E




                                                        Q2SD2049
                      I1

                     0Adc




                                                0




     Peak of hFE           Measurement              Simulation             % Error
        IC(A)                        2.1                     2.09                -0.476
       hFE(k)                          6                     5.97                   -0.5

               All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
Vce(sat) Voltage & Vbe(sat) Voltage Characteristics

Simulation result




                                        Vbe(sat) Voltage/Simulation
                                        Vce(sat) Voltage/Simulation




Evaluation Circuit
                                               C




                                   B

                                   R1     R2       U1                  I2
                                               E




                                                   Q2SD2049
                     I1                                               2.5Adc

                     5mAdc




                                               0




                             Measurement           Simulation                  % Error
       Vce(sat)                        0.9                      0.9                      0
       Vbe(sat)                        1.6                      1.6                      0

               All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
Output Characteristics

Simulation result


                               From top

                               Ib=600u

                               Ib=500u

                               Ib=400u

                               Ib=300u




Evaluation Circuit
                                               C




                                    B

                                     R1   R2        U4
                                                                       V1
                                               E




                                                    Q2SD2049
                                                                5Vdc
                     I1

                     220uAdc




                                               0




               All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

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SPICE MODEL of 2SD2049 in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: DARLINGTON TRANSISTOR PART NUMBER: 2SD2049 MANUFACTURER: SANYO Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 2. BIPOLAR JUNCTION TRANSISTOR MODEL PSpice model Model description parameter IS Saturation Current BF Ideal Maximum Forward Beta NF Forward Current Emission Coefficient VAF Forward Early Voltage IKF Forward Beta Roll-off Knee Current ISE Non-ideal Base-Emitter Diode Saturation Current NE Non-ideal Base-Emitter Diode Emission Coefficient BR Ideal Maximum Reverse Beta NR Reverse Emission Coefficient VAR Reverse Early Voltage IKR Reverse Beta Roll-off Knee Current RE Emitter Resistance RB Base Resistance RC Series Collector Resistance CJE Zero-bias Emitter-Base Junction Capacitance VJE Emitter-Base Junction Potential MJE Emitter-Base Junction Grading Coefficient CJC Zero-bias Collector-Base Junction Capacitance VJC Collector-base Junction Potential MJC Collector-base Junction Grading Coefficient TF Forward Transit Time TR Reverse Transit Time XTB Forward Beta Temperature Coefficient All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 3. DIODE MODEL PSpice model Model description parameter IS Saturation Current RS Series Resistance CJO Zero-bias Junction Capacitance BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 4. Ic-hFE Characteristics Simulation result Simulation Evaluation Circuit V2 0Vdc V3 C B 0Vdc R1 R2 U6 3Vdc V1 E Q2SD2049 I1 0Adc 0 Peak of hFE Measurement Simulation % Error IC(A) 2.1 2.09 -0.476 hFE(k) 6 5.97 -0.5 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 5. Vce(sat) Voltage & Vbe(sat) Voltage Characteristics Simulation result Vbe(sat) Voltage/Simulation Vce(sat) Voltage/Simulation Evaluation Circuit C B R1 R2 U1 I2 E Q2SD2049 I1 2.5Adc 5mAdc 0 Measurement Simulation % Error Vce(sat) 0.9 0.9 0 Vbe(sat) 1.6 1.6 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 6. Output Characteristics Simulation result From top Ib=600u Ib=500u Ib=400u Ib=300u Evaluation Circuit C B R1 R2 U4 V1 E Q2SD2049 5Vdc I1 220uAdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004