SPICE MODEL of MCR225-6FP in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of MCR225-2FP in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
This document summarizes the modeling of a MCR218-4FP thyristor manufactured by Motorola Semiconductor. It includes:
1) A description of the diode model used including key parameters.
2) Simulations and comparisons to measurements of the thyristor's IG-VT, ITM-VTM, and holding characteristics.
3) A simulation and comparison of the thyristor's switching times.
All simulations showed good agreement with measurements within 2.5% error.
SPICE MODEL of MCR225-6FP in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of MCR225-2FP in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
This document summarizes the modeling of a MCR218-4FP thyristor manufactured by Motorola Semiconductor. It includes:
1) A description of the diode model used including key parameters.
2) Simulations and comparisons to measurements of the thyristor's IG-VT, ITM-VTM, and holding characteristics.
3) A simulation and comparison of the thyristor's switching times.
All simulations showed good agreement with measurements within 2.5% error.
SPICE MODEL of MCR218-10FP in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of MCR218-6FP in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
This device modeling report summarizes the simulation of a SHARP ND-165AA solar cell component. The report compares the output characteristics, I-V and P-V curves from simulation against manufacturer measurements, finding errors between -0.26% to 1.00% for key parameters like maximum power, voltage and current at maximum power point, short circuit current, and open circuit voltage.
This document provides a device modeling report for a Motorola MCR225-8FP thyristor. It includes:
1) Details of the thyristor components and manufacturer.
2) Descriptions of the diode, IG-VT, ITM-VTM, holding, and switching time characteristics along with the simulation circuits and comparison of simulated results to measurements.
3) Percent error calculations show good agreement between simulation and measurement across all characteristics within 2.5% error.
This document provides a device modeling report for a Motorola MCR218-2FP thyristor. It includes:
1) A description of the diode and thyristor SPICE models used including key parameters.
2) Simulation results and comparisons to measurements for the IG-VT, ITM-VTM, and holding characteristics.
3) A switching time evaluation circuit and simulation results compared to measurements.
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This document summarizes the modeling of a thyristor component. It includes:
1) Details of the thyristor part number and manufacturer.
2) Descriptions of the diode and thyristor models used in the simulation software.
3) Results of simulations matching measurements of the thyristor's gate trigger voltage (VGT), gate trigger current (IGT), maximum current (ITM), holding current (IH), and switching times (Ton and Toff). The simulations were within 1% error of the measurements.
This document describes a simplified SPICE behavioral model for simulating the input-output characteristics of a DC/DC converter. The model focuses on the input-output relationships rather than detailed circuitry, allowing faster system-level simulations. Key parameters like efficiency, input and output voltages can be set to represent different converter specifications. The model enables transient and DC sweep analysis to observe output voltage and efficiency variations with changing input voltage.
SPICE MODEL of MCR218-10FP in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of MCR218-6FP in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
This device modeling report summarizes the simulation of a SHARP ND-165AA solar cell component. The report compares the output characteristics, I-V and P-V curves from simulation against manufacturer measurements, finding errors between -0.26% to 1.00% for key parameters like maximum power, voltage and current at maximum power point, short circuit current, and open circuit voltage.
This document provides a device modeling report for a Motorola MCR225-8FP thyristor. It includes:
1) Details of the thyristor components and manufacturer.
2) Descriptions of the diode, IG-VT, ITM-VTM, holding, and switching time characteristics along with the simulation circuits and comparison of simulated results to measurements.
3) Percent error calculations show good agreement between simulation and measurement across all characteristics within 2.5% error.
This document provides a device modeling report for a Motorola MCR218-2FP thyristor. It includes:
1) A description of the diode and thyristor SPICE models used including key parameters.
2) Simulation results and comparisons to measurements for the IG-VT, ITM-VTM, and holding characteristics.
3) A switching time evaluation circuit and simulation results compared to measurements.
This device modeling report summarizes the simulation of a SHARP NU-119CA solar cell component. The report describes the evaluation circuit used in the simulation, shows the output characteristics graph and comparison table between measured and simulated values for maximum power, voltage and current at maximum power point, short circuit current, and open circuit voltage, with percentage errors all below 1%.
This document summarizes the modeling of a thyristor component. It includes:
1) Details of the thyristor part number and manufacturer.
2) Descriptions of the diode and thyristor models used in the simulation software.
3) Results of simulations matching measurements of the thyristor's gate trigger voltage (VGT), gate trigger current (IGT), maximum current (ITM), holding current (IH), and switching times (Ton and Toff). The simulations were within 1% error of the measurements.
This document describes a simplified SPICE behavioral model for simulating the input-output characteristics of a DC/DC converter. The model focuses on the input-output relationships rather than detailed circuitry, allowing faster system-level simulations. Key parameters like efficiency, input and output voltages can be set to represent different converter specifications. The model enables transient and DC sweep analysis to observe output voltage and efficiency variations with changing input voltage.
SPICE MODEL of TLP421 SAMPLE B in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of IDT12S60C (Professional Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of IDT12S60C (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
This document summarizes the modeling and simulation of a TLP621_A photocoupler component. It includes SPICE models for the diode, bipolar junction transistor, voltage controlled voltage source, and current controlled components. It also provides simulation results that validate the models by comparing measurements and simulations of key electrical characteristics like forward voltage, capacitance, switching time, and more.
SPICE MODEL of TLP621 SAMPLE B in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
The document provides modeling and characterization details for a Sharp PC851 photocoupler component, including:
1) Descriptions of the diode, bipolar junction transistor, and controlled voltage/current source models used in simulations.
2) Simulation and measurement results for the input device's forward current, junction capacitance, and reverse recovery characteristics.
3) Additional simulations and measurements of the LED IV curve, transistor saturation, current transfer ratio, and switching time characteristics.
4) Tables comparing simulation and measurement results.
SPICE MODEL of TLP421 SAMPLE A in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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The document summarizes the modeling of a silicon carbide Schottky diode from Infineon. It provides the part number, manufacturer, and component details. Simulation results are shown for the forward and reverse current characteristics, and junction capacitance characteristic. Tables compare the simulation and measurement values, showing good agreement within 5% error.
This document contains a transistor modeling report for a NEC 2SC4331-AZ(K) transistor. It includes:
1) A description of the PSpice model parameters for the transistor.
2) Graphs of various transistor characteristics like the reverse/forward early voltage, DC beta, capacitance, and more.
3) Circuit simulations and comparisons with measurement data for characteristics like hFE-IC, VCE(sat)-IC, switching times, and the output characteristic.
The report provides a detailed characterization of the electrical behavior and performance of the transistor through measurements and PSpice simulations.
SPICE MODEL of IDH12S60C (Professional Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of IDH12S60C (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of TA76L431S in SPICE PARK
1. Device Modeling Report
COMPONENTS: SHUNT REGULATOR
PART NUMBER: TA76L431S
MANUFACTURER: TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
2. Pspice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
3. VREF(Reference Voltage) Characteristic
Simulation resuit
Simulation
Evaluation circuit
R1
1k
U1 K
REF
TA76L431S
A
I1
1mAdc
100
0.1u
0
Comparison Table
VKA=VREF Data Sheet Simulation %Error
Vref(V) 2.49 2.4906 0.024
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
4. ZKA(Dynamic Impedance) Characteristic
Simulation resuit
Simulation
Evaluation circuit
R1
1k
U1 K
REF
I1 TA76L431S
A
40mAdc
100
0.1u
0
Comparison Table
VKA=VREF,Ik=0.5mA40mA Data Sheet Simulation %Error
|ZKA| () 0.2 0.204828 2.414
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004