This document provides a device modeling report for a Sanyo 2SD2048 Darlington transistor. It includes the components and manufacturer, bipolar junction transistor and diode models used in the PSpice simulation, and simulation results comparing the transistor's hFE characteristics, Vce(sat) and Vbe(sat) voltages, and output characteristics to measurements.

1. Device Modeling Report
COMPONENTS: DARLINGTON TRANSISTOR
PART NUMBER: 2SD2048
MANUFACTURER: SANYO
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

2. BIPOLAR JUNCTION TRANSISTOR MODEL
PSpice
model Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
TF Forward Transit Time
TR Reverse Transit Time
XTB Forward Beta Temperature Coefficient
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

3. DIODE MODEL
PSpice model
Model description
parameter
IS Saturation Current
RS Series Resistance
CJO Zero-bias Junction Capacitance
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

4. Ic-hFE Characteristics
Simulation result
Simulation
Evaluation Circuit
V2
0Vdc
V3
C
B
0Vdc
R1 R2 U5 3Vdc
V1
E
Q2SD2048
I1
0Adc
0
Peak of hFE Measurement Simulation % Error
IC(A) 1.4 1.401 0.071
hFE(k) 4.3 4.26 -0.930
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

5. Vce(sat) Voltage & Vbe(sat) Voltage Characteristics
Simulation result
Vbe(sat) Voltage/Simulation
Vce(sat) Voltage/Simulation
Evaluation Circuit
C
B
R1 R2 U1 I2
E
Q2SD2048
I1 1.5Adc
3mAdc
0
Measurement Simulation % Error
Vce(sat) 0.9 0.9 0
Vbe(sat) 1.6 1.567 -2.062
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

6. Output Characteristics
Simulation result
Ib=300u
Ib=250u
Ib=200u
Ib=150u
Evaluation Circuit
C
B
R1 R2 U3
V1
E
Q2SD2048
5Vdc
I1
220uAdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004