SPICE MODEL of MCR225-2FP in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of MCR225-10FP in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
This document provides a device modeling report for a Motorola MCR225-8FP thyristor. It includes:
1) Details of the thyristor components and manufacturer.
2) Descriptions of the diode, IG-VT, ITM-VTM, holding, and switching time characteristics along with the simulation circuits and comparison of simulated results to measurements.
3) Percent error calculations show good agreement between simulation and measurement across all characteristics within 2.5% error.
This document summarizes the modeling of a thyristor component. It includes:
1) Details of the thyristor part number and manufacturer.
2) Descriptions of the diode and thyristor models used in the simulation software.
3) Results of simulations matching measurements of the thyristor's gate trigger voltage (VGT), gate trigger current (IGT), maximum current (ITM), holding current (IH), and switching times (Ton and Toff). The simulations were within 1% error of the measurements.
SPICE MODEL of BT145-500R in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of MCR218-10FP in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
This document summarizes the Pspice modeling and simulation of a thyristor component. It examines the diode model parameters, the forward IG-VT characteristic, the reverse ITM-VTM characteristic, the holding current IH characteristic, and the switching times Ton and Toff. The simulations show good agreement with measurements, with most error values below 2%.
SPICE MODEL of MCR218-6FP in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of BT145-600R in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
This document provides a device modeling report for a Motorola MCR218-2FP thyristor. It includes:
1) A description of the diode and thyristor SPICE models used including key parameters.
2) Simulation results and comparisons to measurements for the IG-VT, ITM-VTM, and holding characteristics.
3) A switching time evaluation circuit and simulation results compared to measurements.
SPICE MODEL of MCR218-8FP in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
This document summarizes the modeling of a MCR218-4FP thyristor manufactured by Motorola Semiconductor. It includes:
1) A description of the diode model used including key parameters.
2) Simulations and comparisons to measurements of the thyristor's IG-VT, ITM-VTM, and holding characteristics.
3) A simulation and comparison of the thyristor's switching times.
All simulations showed good agreement with measurements within 2.5% error.
SPICE MODEL of MCR225-6FP in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of MCR225-2FP in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of MCR225-10FP in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
This document provides a device modeling report for a Motorola MCR225-8FP thyristor. It includes:
1) Details of the thyristor components and manufacturer.
2) Descriptions of the diode, IG-VT, ITM-VTM, holding, and switching time characteristics along with the simulation circuits and comparison of simulated results to measurements.
3) Percent error calculations show good agreement between simulation and measurement across all characteristics within 2.5% error.
This document summarizes the modeling of a thyristor component. It includes:
1) Details of the thyristor part number and manufacturer.
2) Descriptions of the diode and thyristor models used in the simulation software.
3) Results of simulations matching measurements of the thyristor's gate trigger voltage (VGT), gate trigger current (IGT), maximum current (ITM), holding current (IH), and switching times (Ton and Toff). The simulations were within 1% error of the measurements.
SPICE MODEL of BT145-500R in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of MCR218-10FP in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
This document summarizes the Pspice modeling and simulation of a thyristor component. It examines the diode model parameters, the forward IG-VT characteristic, the reverse ITM-VTM characteristic, the holding current IH characteristic, and the switching times Ton and Toff. The simulations show good agreement with measurements, with most error values below 2%.
SPICE MODEL of MCR218-6FP in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of BT145-600R in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
This document provides a device modeling report for a Motorola MCR218-2FP thyristor. It includes:
1) A description of the diode and thyristor SPICE models used including key parameters.
2) Simulation results and comparisons to measurements for the IG-VT, ITM-VTM, and holding characteristics.
3) A switching time evaluation circuit and simulation results compared to measurements.
SPICE MODEL of MCR218-8FP in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
This document summarizes the modeling of a MCR218-4FP thyristor manufactured by Motorola Semiconductor. It includes:
1) A description of the diode model used including key parameters.
2) Simulations and comparisons to measurements of the thyristor's IG-VT, ITM-VTM, and holding characteristics.
3) A simulation and comparison of the thyristor's switching times.
All simulations showed good agreement with measurements within 2.5% error.
SPICE MODEL of MCR225-6FP in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of BT152B-800R in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of BT151X-500 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of BT152B-400R in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of BT152-600R in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of BT151X-800 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of BT300S-600R in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
This document provides a device modeling report for a BT300S-500R thyristor manufactured by Philips Semiconductor. It includes the component parameters, SPICE model description, and simulation results comparing the modeled and measured characteristics of the thyristor, including its IG-VT, ITM-VTM, holding, and switching time characteristics. The simulation results show good agreement with measurements, with most error values below 2%.
SPICE MODEL of BT152-800R in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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2. DIODE MODEL
Pspice model
Model description
Parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
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