SPICE MODEL of 8P4J in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS:THYRISTOR
PART NUMBER:8P4J
MANUFACTURER: NEC CORPORATION
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

2. DIODE MODEL
Pspice model
Model description
Parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

3. IG-VT Characteristic
Evaluation Circuit
Rload
100
A
U1 Vak
6Vdc
G
8P4J
K
Ig
0Adc
0
Simulation result
Simulation
Comparison Table
Measurement Simulation % Error
IG (Max 10) (mA) 9.5 9.540 -0.421
VT (Max 1.5 )(V) 0.55 0.547 0.545
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

4. ITM-VTM Characteristic
Evaluation Circuit
Rload
A
24
U1 Vak
0Vdc
8P4J
G
K
Ig
10mAdc
0
Simulation result
Simulation
Comparison Table
At ITM=10A Measurement Simulation % Error
VTM(V) 1.4 1.3787 1.521
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

5. Holding Characteristic (IH)
Evaluation Circuit
Rload
A
2.265
Rg U1
G
8P4J
Vak
VOFF = 0
V1 = 0 1k FREQ = 50
K
V2 = 11 VAMPL = 24
TD = 5ms V1
TR = 1us
TF = 1us
PW = 1ms
PER = 20ms
0
Simulation result
Simulation
Comparison Table
VAK=24V,ITM=10A Measurement Simulation % Error
IH(mA) 6 6.1259 -2.098
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004