SPICE MODEL of TPCF8A01 (Professional+BDS+SBDS Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of TPCF8A01 (Standard+BDS+SBDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of TPCF8A01 (Standard+BDS+SBDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of SSM5H08TU (Standard+BDS+SBDP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of SSM5H08TU (Standard+BDS+SBDP) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of SSM5H08TU (Professional+BDP+SBDP Model) in SPICE PARKTsuyoshi Horigome
This document summarizes the modeling and simulation of a Power MOSFET. It includes:
1) Details of the MOSFET component being modeled, including manufacturer, part number, and key electrical parameters.
2) Descriptions of the models used to simulate various electrical characteristics of the MOSFET, including its transconductance, capacitances, switching times, and more.
3) Results of circuit simulations comparing measured data to simulated data for characteristics like Id-Vgs, gate charge, output characteristics and more. Differences between measurement and simulation are generally within a few percent.
4) Reference schematics for the evaluation circuits used to simulate each characteristic.
SPICE MODEL of SSM5H08TU (Professional+BDS+SBDP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of SSM5H08TU (Professional+BDS+SBDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of TPC6005 (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
This document summarizes the modeling of a power MOSFET and its components. It includes:
1) SPICE models for the power MOSFET, body diode, and ESD protection diode with descriptions of each model parameter.
2) Simulation results graphs that compare measurements to simulations for various electrical characteristics like transconductance, capacitance, switching times, and more.
3) Evaluation circuits used to simulate the electrical behavior and extract model parameters.
SPICE MODEL of SPI11N60C3 (Professional+BDSP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of SPI11N60C3 (Professional+BDSP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of IRFB9N65A (Professional+BDP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of IRFB9N65A (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of SPP11N60C3 (Professional+BDSP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of SPP11N60C3 (Professional+BDSP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of TPCF8A01 (Standard+BDS+SBDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of TPCF8A01 (Standard+BDS+SBDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of SSM5H08TU (Standard+BDS+SBDP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of SSM5H08TU (Standard+BDS+SBDP) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of SSM5H08TU (Professional+BDP+SBDP Model) in SPICE PARKTsuyoshi Horigome
This document summarizes the modeling and simulation of a Power MOSFET. It includes:
1) Details of the MOSFET component being modeled, including manufacturer, part number, and key electrical parameters.
2) Descriptions of the models used to simulate various electrical characteristics of the MOSFET, including its transconductance, capacitances, switching times, and more.
3) Results of circuit simulations comparing measured data to simulated data for characteristics like Id-Vgs, gate charge, output characteristics and more. Differences between measurement and simulation are generally within a few percent.
4) Reference schematics for the evaluation circuits used to simulate each characteristic.
SPICE MODEL of SSM5H08TU (Professional+BDS+SBDP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of SSM5H08TU (Professional+BDS+SBDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of TPC6005 (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
This document summarizes the modeling of a power MOSFET and its components. It includes:
1) SPICE models for the power MOSFET, body diode, and ESD protection diode with descriptions of each model parameter.
2) Simulation results graphs that compare measurements to simulations for various electrical characteristics like transconductance, capacitance, switching times, and more.
3) Evaluation circuits used to simulate the electrical behavior and extract model parameters.
SPICE MODEL of SPI11N60C3 (Professional+BDSP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of SPI11N60C3 (Professional+BDSP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of IRFB9N65A (Professional+BDP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of IRFB9N65A (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of SPP11N60C3 (Professional+BDSP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of SPP11N60C3 (Professional+BDSP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of TPCF8302 (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
The document provides a device modeling report for a Toshiba power MOSFET (TPCF8302) and its internal body diode. It includes:
1) Details of the MOSFET and diode components and manufacturer.
2) SPICE models for the MOSFET describing its electrical parameters and characteristics.
3) Simulation results comparing measured and simulated MOSFET characteristics including Id-Vgs, switching time, and more.
4) SPICE model for the internal diode and simulation results for its zener voltage characteristic.
SPICE MODEL of TPC8012-H (Professional+BDP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of TPC8012-H (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of IRFB9N65A (Professional+BDS Model) in SPICE PARKTsuyoshi Horigome
This document summarizes the modeling and simulation of an IRFB9N65A power MOSFET manufactured by International Rectifier. It includes:
1) Details of the MOSFET components and manufacturer.
2) Descriptions and parameters of the PSpice models used to simulate the MOSFET's electrical characteristics.
3) Results of simulations validating the MOSFET's transconductance, capacitance, switching time and other characteristics against manufacturer measurements.
4) Circuit diagrams of the evaluation setups used in the simulations.
SPICE MODEL of SPW11N60CFD (Professional+BDSP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of SPW11N60CFD (Professional+BDSP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK3611-01MR (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK3611-01MR (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of TPC6005 (Professional+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of TPC6005 (Professional+BDS Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of IRFB9N60A (Professional+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of IRFB9N60A (Professional+BDS Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of IRFIB7N50A (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of IRFIB7N50A (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK3644-01 (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
This document summarizes the key parameters and simulation results of a power MOSFET transistor and its internal body diode. It includes tables of parameters for the MOSFET and diode models, graphs comparing simulated and measured output characteristics like forward current and switching times, and evaluation circuits used in the simulations. The models aim to accurately represent the electrical behavior of the real components for circuit design and analysis.
SPICE MODEL of SSM3K15FV (Professional+BDP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of SSM3K15FV (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of TPC6005 (Professional+BDP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of TPC6005 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK2563 (Professional+BDP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK2563 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK2661 (Professional+BDSP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK2661 (Professional+BDSP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK3872-01S (Professional+BDP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK3872-01S (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of IRFB9N30A (Professional+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of IRFB9N30A (Professional+BDS Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK2740 (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK2740 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK2563 (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK2563 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of SPA11N60C3 (Professional+BDSP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of SPA11N60C3 (Professional+BDSP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of IRFB9N60A (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of IRFB9N60A (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of IRFB9N60A (Professional+BDP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of IRFB9N60A (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
The Concept India is a manufacturer and exporter of health care therapy products based in Mumbai, India. Established in 2006, they produce and sell a range of products including steam inhalers, magnetic massage hair brushes, eye masks, heating pads, herbal products, and more. The company prides itself on using quality materials and customization abilities to meet customer needs.
SPICE MODEL of TPCP8205-H (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of TPCP8205-H (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of TPCF8302 (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
The document provides a device modeling report for a Toshiba power MOSFET (TPCF8302) and its internal body diode. It includes:
1) Details of the MOSFET and diode components and manufacturer.
2) SPICE models for the MOSFET describing its electrical parameters and characteristics.
3) Simulation results comparing measured and simulated MOSFET characteristics including Id-Vgs, switching time, and more.
4) SPICE model for the internal diode and simulation results for its zener voltage characteristic.
SPICE MODEL of TPC8012-H (Professional+BDP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of TPC8012-H (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of IRFB9N65A (Professional+BDS Model) in SPICE PARKTsuyoshi Horigome
This document summarizes the modeling and simulation of an IRFB9N65A power MOSFET manufactured by International Rectifier. It includes:
1) Details of the MOSFET components and manufacturer.
2) Descriptions and parameters of the PSpice models used to simulate the MOSFET's electrical characteristics.
3) Results of simulations validating the MOSFET's transconductance, capacitance, switching time and other characteristics against manufacturer measurements.
4) Circuit diagrams of the evaluation setups used in the simulations.
SPICE MODEL of SPW11N60CFD (Professional+BDSP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of SPW11N60CFD (Professional+BDSP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK3611-01MR (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK3611-01MR (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of TPC6005 (Professional+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of TPC6005 (Professional+BDS Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of IRFB9N60A (Professional+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of IRFB9N60A (Professional+BDS Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of IRFIB7N50A (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of IRFIB7N50A (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK3644-01 (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
This document summarizes the key parameters and simulation results of a power MOSFET transistor and its internal body diode. It includes tables of parameters for the MOSFET and diode models, graphs comparing simulated and measured output characteristics like forward current and switching times, and evaluation circuits used in the simulations. The models aim to accurately represent the electrical behavior of the real components for circuit design and analysis.
SPICE MODEL of SSM3K15FV (Professional+BDP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of SSM3K15FV (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of TPC6005 (Professional+BDP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of TPC6005 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK2563 (Professional+BDP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK2563 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK2661 (Professional+BDSP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK2661 (Professional+BDSP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK3872-01S (Professional+BDP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK3872-01S (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of IRFB9N30A (Professional+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of IRFB9N30A (Professional+BDS Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK2740 (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK2740 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK2563 (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK2563 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of SPA11N60C3 (Professional+BDSP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of SPA11N60C3 (Professional+BDSP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of IRFB9N60A (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of IRFB9N60A (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of IRFB9N60A (Professional+BDP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of IRFB9N60A (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
The Concept India is a manufacturer and exporter of health care therapy products based in Mumbai, India. Established in 2006, they produce and sell a range of products including steam inhalers, magnetic massage hair brushes, eye masks, heating pads, herbal products, and more. The company prides itself on using quality materials and customization abilities to meet customer needs.
SPICE MODEL of TPCP8205-H (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of TPCP8205-H (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SJ656 (Professional+BDP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SJ656 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
This device modeling report provides an LTspice IV model for the SO-KPC5-182G solar cell from manufacturer GRID. The report includes the solar cell's equivalent circuit diagram, output characteristic simulation results from applying a sweep voltage, and a comparison of the simulated and measured maximum power, voltage at maximum power, short circuit current, and open circuit voltage, showing errors less than 1.5%.
Device Modeling of Solar Cell of Reverse Characteristics Using Diode Model Pa...Tsuyoshi Horigome
This document describes modeling the reverse characteristics of a solar cell using diode model parameters. It contains SPICE code for a circuit simulation of a 60-cell solar panel with parameters for the diode model that can be varied, such as breakdown voltage (BV) and gradient (NBV). It also shows how additional solar cells (SOL parameter) can be added to the model.
SPICE MODEL of TPC6107 (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of TPC6107 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
The document announces an event to be held on November 17, 2013 near Sriram Institute in Greater Noida where gifts will be presented to both female and male winners. It provides the website www.antral.org and Facebook page for the organization Antral/अंतराल.
We are an eminent manufacturer and exporter of diversified range of chemical feed, di-calcium phosphate, plaster of paris, gypsum, herbal cosmetic products, industrial dryers, industrial lab equipment, uniforms that used across the globe.
This technical memo discusses changes needed to an electronic circuit diagram. The memo notes that the value of resistor R246, which is connected to the input of chip U38, is too large and should be changed to a value less than 2.2k. It also states that the inverting symbol on chip U100 should be changed to a non-inverting symbol in order for the circuit to switch in normal conditions as the output is currently 1 but needs to be 0. Simulation waveforms are included showing the voltage levels over time at nodes U101:1 and R139:1.
El documento describe el campo visual ampliado del ser humano, que es más amplio que el punto focal y permite ver un ángulo de 160-170 grados sin dificultad. Incluye un ejercicio para demostrar esto extendiendo los brazos y viendo los dedos sin mover la cabeza, y otro ejercicio de lectura que utiliza tanto el punto focal como el campo visual ampliado.
SPICE MODEL of 2SK3444 (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
This document contains a device modeling report for a TOSHIBA 2SK3444 N-channel power MOSFET. It includes:
1) SPICE model parameters for the MOSFET, including its body diode and ESD protection diode.
2) Simulation results and measurement comparisons for the MOSFET's transconductance, Id-Vgs, Rds(on), gate charge, capacitance, switching time and output characteristics.
3) Simulation results and measurement comparisons for the body diode's forward current, reverse recovery and zener voltage characteristics.
SPICE MODEL of SPW35N60CFD (Professional+BDSP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of SPW35N60CFD (Professional+BDSP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SJ511 (Professional+BDP Model) in SPICE PARKTsuyoshi Horigome
This document provides a device modeling report for a Power MOSFET and includes:
1) Specifications and parameters for the MOSFET SPICE model.
2) Simulation results and comparisons to measurement data for key MOSFET characteristics like transconductance, Vgs-Id, Rds(on), capacitance, switching times and more.
3) Specifications and simulation results for the body diode and ESD protection diode models.
SPICE MODEL of SSM6J51TU (Professional+BDP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of SSM6J51TU (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of SPD02N60C3 (Professional+BDSP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of SPD02N60C3 (Professional+BDSP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
The key to successful testing is effective and timely planning. Rick Craig introduces proven test planning methods and techniques, including the Master Test Plan and level-specific test plans for acceptance, system, integration, and unit testing. Rick explains how to customize an IEEE-829-style test plan and test summary report to fit your organization’s needs. Learn how to manage test activities, estimate test efforts, and achieve buy-in. Discover a practical risk analysis technique to prioritize your testing and become more effective with limited resources. Rick offers test measurement and reporting recommendations for monitoring the testing process. Discover new methods and develop renewed energy for taking your organization’s test management to the next level.
SPICE MODEL of SSM5H05TU (Standard+BDS+SBDP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of SSM5H05TU (Standard+BDS+SBDP) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of IRFB9N65A (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
This document summarizes the modeling and simulation of an IRFB9N65A power MOSFET. It includes:
1) Details of the MOSFET components and manufacturer.
2) Descriptions and parameters of the Pspice models used to simulate the MOSFET's electrical characteristics including its power MOSFET, body diode and transconductance models.
3) Simulation results and comparisons to measurement data for various electrical characteristics like transconductance, Vgs-Id, Id-Rds(on), gate charge, switching times and reverse recovery.
4) Diagrams of the evaluation circuits used to simulate the characteristics.
SPICE MODEL of 2SK2661 (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK2661 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of IRFIB7N50A (Professional+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of IRFIB7N50A (Professional+BDS Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of SPU02N60C3 (Professional+BDSP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of SPU02N60C3 (Professional+BDSP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of IRFIB7N50A (Professional+BDP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of IRFIB7N50A (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK3681-01 (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK3681-01 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK3728-01MR (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK3728-01MR (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of SPB02N60C3 (Professional+BDSP Model) in SPICE PARKTsuyoshi Horigome
This document summarizes the key parameters and simulation results for a power MOSFET transistor model. It includes the component name and manufacturer, a list of model parameters, graphs comparing measurement and simulation results for characteristics like transconductance, voltage-current relationship, and switching times, and evaluation circuits used in the simulations.
SPICE MODEL of SPP02N60C3 (Professional+BDSP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of SPP02N60C3 (Professional+BDSP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK2563 (Professional+BDS Model) in SPICE PARKTsuyoshi Horigome
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SPICE MODEL of TPCF8A01 (Professional+BDS+SBDS Model) in SPICE PARK
1. Device Modeling Report
COMPONENTS: Power MOSFET (Professional)
PART NUMBER: TPCF8A01
MANUFACTURER: TOSHIBA
Body Diode (Standard) / ESD Protection Diode /
Schottky Barrier Diode (Standard)
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
2. POWER MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
3. Body Diode Model
Pspice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
4. Vgs-Id Characteristic
Circuit Simulation result
10A
8A
6A
4A
2A
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(V2)
V_V1
Evaluation circuit
U5
OP EN OP EN
OP EN OP EN
OP EN
V2
R1 0V dc
10 0M EG
V1
10 Vd c V3
0 10 Vd c
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
6. Id-Rds(on) Characteristic
Circuit Simulation result
Evaluation circuit
U2
OPEN OPEN
OPEN
OPEN OPEN
V1
R1
0Vdc
100MEG
TPCF8A01
0 VG VD
2.5Vdc 10Vdc
0
Simulation Result
ID=1.5A, VGS=2.5V Measurement Simulation Error (%)
R DS (on) 50.00 m 50.00 m 0.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
7. Gate Charge Characteristic
Circuit Simulation result
4V
8V
VDD=16V
Evaluation circuit
U2
OPEN OPEN
OPEN
OPEN OPEN
R1
100MEG
PER = 1000u
PW = 600u TPCF8A01
TF = 10n Dbreak
0 TR = 10n
TD = 0
I2 = 1m D1
I1 I2
I1 = 0 W1 3Adc
+
-
W
IOFF = 1mA V1
ION = 0uA 16Vdc
0
Simulation Result
VDD=16V,ID=3A Measurement Simulation Error (%)
,VGS=5V
Qgs 1.3 nC 1.2912 nC -0.677
Qgd 2.1 nC 2.0812 nC -0.895
Qg 7.5 nC 7.5000 nC 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
9. Switching Time Characteristic
Circuit Simulation result
7.0V
VDS = 10V
6.0V
VGS = 5V
4.0V
2.0V
0V
5.00us 5.05us 5.09us
V(2) V(3)/2
Time
Evaluation circuit
L1 RL
3
V3
0.03uH 6.67
OPEN 0Vdc
U8
Rop
OPEN OPEN VDD
100MEG 10
OPEN OPEN
R1 L2
0 2
0.03uH 0
V1 = 0 4.7
V1
V2 = 10 R2
TD = 5u
TR = 6n 4.7
TF = 7n
PW = 5u
PER = 100u
0 0
0
Simulation Result
ID=3A, VDD=15V
Measurement Simulation Error(%)
VGS=0/5V
td (on) 7.50 ns 7.50 ns 0.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
10. Output Characteristic
Circuit Simulation result
10 3.0V
2.1V
2.0V
1.9V
1.8V
1.7V
1.6V
1.5V
VGS=1.4V
Evaluation circuit
U2
OPEN OPEN
OPEN
OPEN OPEN
V1
R1
0Vdc
100MEG
TPCF8A01
0 VG VD
2.5Vdc 10Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
11. BODY DIODE SPICE MODEL
*$
*PART NUMBER: TPCF8A01
*MANUFACTURER: TOSHIBA
*VDSS=20V, ID=3A
*All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
.MODEL D8A01 D
+ IS=2.5659E-6
+ N=2.1585
+ RS=13.923E-3
+ IKF=3.6193
+ CJO=3E-12
+ ISR=0
+ BV=20
+ IBV=1E-6
*****BODY DIODE STANDARD MODEL****
*$
Body Diode Model
Pspice Model description
model
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
12. Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
U2
OPEN OPEN
OPEN OPEN
OPEN
R2
R1
0.01m
100MEG TPCF8A01
V1
0Vdc
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
14. Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
U2
OPEN OPEN
OPEN OPEN
OPEN
R2
R1
50
100MEG TPCF8A01
V1 = -10 V2
V2 = 10.6
TD = 0
0 TR = 10n
TF = 10n
PW = 20u
PER = 50u
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trr=trj+trb 17.00 ns 17.13 ns 0.78
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
15. Reverse Recovery Characteristic Reference
Trj=6.6(ns)
Trb=10.4(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
16. ESD PROTECTION DIODE SPICE MODEL
*$
*PART NUMBER: TPCF8A01
*MANUFACTURER: TOSHIBA
*VGSS=12V
*All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
.SUBCKT DZ8A01 1 2
D1 1 3 DZ
D2 2 3 DZ1
.MODEL DZ D
+ IS=0.01p N=0.1 ISR=0 IBV=0.001 BV=15.6 CJO=3E-12
+ RS=333 XTI=0 EG=0
.MODEL DZ1 D
+ IS=0.01p N=0.1 ISR=0 IBV=0.001 BV=15.6 RS=0 CJO=3E-12
+ XTI=0 EG=0
.ENDS
*$
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
17. Zener Voltage Characteristic
Circuit Simulation Result
Evaluation Circuit
U2
OPEN OPEN
OPEN OPEN
OPEN
OPEN
R2
OPEN
R1
0.01m
100MEG TPCF8A01
V1
0Vdc
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
19. DIODE SCHOTTKY SPICE MODEL
*$
.MODEL DSB8A01 D
+ IS=88.198E-9
+ N=1.0182
+ RS=65.469E-3
+ IKF=212.80
+ EG=.69
+ CJO=267.49E-12
+ M=.48544
+ VJ=.3905
+ ISR=0
+ BV=20
+ IBV=2.5000E-6
+ TT=3E-12
*****SBD MODEL*****
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
20. Forward Current Characteristic of Schottky Barrier Diode
Circuit Simulation Result
Evaluation Circuit
TPCF8A01
OPEN OPEN
OPEN OPEN
OPEN
R2
U2
R1
0.01m
100MEG
V1
0Vdc
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
22. Junction Capacitance Characteristic of Schottky Barrier Diode
Circuit Simulation Result
Evaluation Circuit
TPCF8A01
OPEN OPEN
OPEN OPEN
OPEN
V2
U2
R1
V1 = 0 V1 0Vdc
100MEG V2 = 20
TD = 0
TR = 1u
TF = 10n
0 PW = 50u
PER = 100u
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
23. Comparison Graph
Circuit Simulation Result
Simulation Result
Cj(pF)
Vrev(V) Measurement Simulation %Error
1.00 145.00 143.57 -0.99
2.00 110.00 110.40 0.37
5.00 75.00 74.44 -0.75
10.00 54.00 54.12 0.22
20.00 40.00 39.14 -2.15
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005