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Device Modeling Report




COMPONENTS: DARLINGTON TRANSISTOR
PART NUMBER: 2SD1827
MANUFACTURER: SANYO




                 Bee Technologies Inc.


   All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
BIPOLAR JUNCTION TRANSISTOR MODEL
  PSpice
   model                                Model description
 parameter
     IS       Saturation Current
     BF       Ideal Maximum Forward Beta
     NF       Forward Current Emission Coefficient
    VAF       Forward Early Voltage
    IKF       Forward Beta Roll-off Knee Current
    ISE       Non-ideal Base-Emitter Diode Saturation Current
    NE        Non-ideal Base-Emitter Diode Emission Coefficient
    BR        Ideal Maximum Reverse Beta
    NR        Reverse Emission Coefficient
    VAR       Reverse Early Voltage
    IKR       Reverse Beta Roll-off Knee Current
    RE        Emitter Resistance
    RB        Base Resistance
    RC        Series Collector Resistance
    CJE       Zero-bias Emitter-Base Junction Capacitance
    VJE       Emitter-Base Junction Potential
    MJE       Emitter-Base Junction Grading Coefficient
    CJC       Zero-bias Collector-Base Junction Capacitance
    VJC       Collector-base Junction Potential
   MJC        Collector-base Junction Grading Coefficient
     TF       Forward Transit Time
     TR       Reverse Transit Time
    XTB       Forward Beta Temperature Coefficient




             All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
DIODE MODEL
 PSpice model
                                       Model description
  parameter
      IS        Saturation Current
      RS        Series Resistance
     CJO        Zero-bias Junction Capacitance
      BV        Reverse Breakdown Voltage(a positive value)
     IBV        Reverse Breakdown Current(a positive value)
      TT        Transit Time




           All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
Ic-hFE Characteristics

Simulation result




                                                         Simulation




Evaluation Circuit


                                                              V2


                                                                      0Vdc


                     V3
                                                     C




                                     B
                              0Vdc
                                         R1     R2                     2Vdc
                                                                              V1
                                                     E




                                                            U3
                      I1                                 Q2SD1827

                     0.2Adc




                                                     0




     Peak of hFE           Measurement                   Simulation            % Error
        IC(A)                                   3                3.016               0.533
       hFE(k)                                 5.7                 5.75               0.877

               All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
Vce(sat) Voltage & Vbe(sat) Voltage Characteristics

Simulation result




                                           Vbe(sat) Voltage/Simulation
                                           Vce(sat) Voltage/Simulation




Evaluation Circuit
                                                  C




                                  B

                                      R1     R2                          I2
                                                  E




                                                        U1
                     I1                               Q2SD1827           5Adc

                     10mAdc




                                                  0




                              Measurement             Simulation           % Error
       Vce(sat)                         0.9                        0.9               0
       Vbe(sat)                         1.7                        1.7               0

               All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
Output Characteristics

Simulation result




                                                                 Ib=2.0m

                                                                 Ib=1.5m

                                                                 Ib=1.0m

                                                                 Ib=0.5m




Evaluation Circuit
                                               C




                                 B

                                     R1   R2
                                                                       V1
                                               E




                                                     U1
                                                   Q2SD1827     5Vdc
                     I1

                     220uAdc




                                               0




               All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

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Darlington Transistor Modeling Report

  • 1. Device Modeling Report COMPONENTS: DARLINGTON TRANSISTOR PART NUMBER: 2SD1827 MANUFACTURER: SANYO Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 2. BIPOLAR JUNCTION TRANSISTOR MODEL PSpice model Model description parameter IS Saturation Current BF Ideal Maximum Forward Beta NF Forward Current Emission Coefficient VAF Forward Early Voltage IKF Forward Beta Roll-off Knee Current ISE Non-ideal Base-Emitter Diode Saturation Current NE Non-ideal Base-Emitter Diode Emission Coefficient BR Ideal Maximum Reverse Beta NR Reverse Emission Coefficient VAR Reverse Early Voltage IKR Reverse Beta Roll-off Knee Current RE Emitter Resistance RB Base Resistance RC Series Collector Resistance CJE Zero-bias Emitter-Base Junction Capacitance VJE Emitter-Base Junction Potential MJE Emitter-Base Junction Grading Coefficient CJC Zero-bias Collector-Base Junction Capacitance VJC Collector-base Junction Potential MJC Collector-base Junction Grading Coefficient TF Forward Transit Time TR Reverse Transit Time XTB Forward Beta Temperature Coefficient All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 3. DIODE MODEL PSpice model Model description parameter IS Saturation Current RS Series Resistance CJO Zero-bias Junction Capacitance BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 4. Ic-hFE Characteristics Simulation result Simulation Evaluation Circuit V2 0Vdc V3 C B 0Vdc R1 R2 2Vdc V1 E U3 I1 Q2SD1827 0.2Adc 0 Peak of hFE Measurement Simulation % Error IC(A) 3 3.016 0.533 hFE(k) 5.7 5.75 0.877 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 5. Vce(sat) Voltage & Vbe(sat) Voltage Characteristics Simulation result Vbe(sat) Voltage/Simulation Vce(sat) Voltage/Simulation Evaluation Circuit C B R1 R2 I2 E U1 I1 Q2SD1827 5Adc 10mAdc 0 Measurement Simulation % Error Vce(sat) 0.9 0.9 0 Vbe(sat) 1.7 1.7 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 6. Output Characteristics Simulation result Ib=2.0m Ib=1.5m Ib=1.0m Ib=0.5m Evaluation Circuit C B R1 R2 V1 E U1 Q2SD1827 5Vdc I1 220uAdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004