SPICE MODEL of QST7TR in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: TRANSISTOR
PART NUMBER: QST7TR
MANUFACTURER: ROHM
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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2. TRANSISTOR MODEL
PSpice model
Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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3. Reverse
Reverse Early Voltage Characteristic
Ic
VAR
Vce
Y=aX+b
(X1,Y1)
(X2,Y2)
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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4. Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
Emitter Current
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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5. Forward
Forward Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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6. C-B Capacitance Characteristics
Measurement
Simulation
E-B Capacitance Characteristics
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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7. Transistor hFE-IC Characteristics
Circuit Simulation Result
1.0K
100
10
-1.0mA -10A
IC(X_U1.Q_Q1)/ I(U1:3)
IC(X_U1.Q_Q1)
Evaluation Circuit
U1
V1
-2V
QST7TR
I1
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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8. Comparison Graph
Circuit Simulation Result
Simulation Result
hFE
Ic(A) Error(%)
Measurement Simulation
-0.001 350.000 358.782 2.509
-0.002 373.832 364.465 -2.506
-0.005 382.263 369.210 -3.415
-0.010 375.000 370.923 -1.087
-0.020 370.000 370.863 0.233
-0.050 360.000 366.745 1.874
-0.100 345.423 358.011 3.644
-0.200 332.226 339.279 2.123
-0.500 284.091 278.243 -2.058
-1.000 140.000 146.134 4.381
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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9. VCE(Sat)-IC Characteristics
Circuit Simulation Result
-1.0V
-10mV
-1.0mA -500mA
VC(X_U1.Q_Q1)
IC(X_U1.Q_Q1)
Evaluation Circuit
VC
U1
F1
QST7TR
0Adc F
20
I1
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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10. Comparison Graph
Circuit Simulation Result
Simulation Result
VCE(sat)(V)
IC(A) Error(%)
Measurement Simulation
-0.001 -0.0220 -0.0226 2.8045
-0.002 -0.0220 -0.0220 -0.2000
-0.005 -0.0215 -0.0216 0.4558
-0.010 -0.0215 -0.0219 2.0744
-0.020 -0.0230 -0.0233 1.0957
-0.050 -0.0280 -0.0280 -0.0821
-0.100 -0.0365 -0.0364 -0.3205
-0.200 -0.0530 -0.0538 1.4245
-0.500 -0.1060 -0.1096 3.3538
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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11. VBE(Sat)-IC Characteristics
Circuit Simulation Result
-10V
-10mV
-1.0mA -1.0A
VB(X_U1.Q_Q1)
IC(X_U1.Q_Q1)
Evaluation Circuit
VC
U1
F1
QST7TR
0Adc F
20
I1
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
11

12. Comparison Graph
Circuit Simulation Result
Simulation Result
VBE(sat)(V)
IC(A) Error(%)
Measurement Simulation
-0.001 -0.580 -0.596 2.736
-0.002 -0.600 -0.614 2.348
-0.005 -0.630 -0.639 1.423
-0.010 -0.660 -0.658 -0.292
-0.020 -0.695 -0.678 -2.472
-0.050 -0.730 -0.706 -3.257
-0.100 -0.760 -0.732 -3.725
-0.200 -0.800 -0.765 -4.430
-0.500 -0.860 -0.835 -2.916
-1.000 -0.920 -0.950 3.252
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
12

13. Switching Characteristics
Circuit simulation result
8.0V 40V
1 2
7.0V
6.0V
5.0V
4.0V 20V
3.0V
2.0V
1.0V
0V 0V
-1.0V
-2.0V
-3.0V
-4.0V -20V
-5.0V
-6.0V
-7.0V
>>
-8.0V -40V
0s 0.5us 1.5us 2.5us 3.5us 4.5us
1 V(R1:2) 2 V(U1:5)
Time
Evaluation circuit
U1
D1 R2 L2 RL
1 2
R1 L1
225 50nH 25
1 2 D1N5817
D2 R3 VCC
50 30nH
V1 = -6 QST7TR
V2 = 5 V1 D1N5817 195 -25
TD = 2.5u
TR = 10ns
TF = 10ns
PW = 20us
PER = 50us
0
Simulation result
Measurement Simulation %Error
tf (ns) 45.000 45.014 0.031
tstg (ns) 144.000 144.495 0.344
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
13

14. Switching Characteristics Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
14

15. Ft - IC Characteristics
Circuit Simulation Result
1.0G
100M
10M
-10m -10
ZeroCross(DB(I(U1:2)))
V_Ic
Evaluation Circuit
H1
+
-
H
0
U2
QST7TR
Vce
U1 -2Vdc
0
F1 QST7TR
G1
IC + I1
1m 0 1Aac
-
G 0Adc
Ic F 0
GAIN = 1e6 0 0
0 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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16. Comparison Graph
Circuit Simulation Result
Simulation Result
FT(MHz)
-IC(A) Error(%)
Measurement Simulation
0.010 94.000 96.960 3.149
0.020 156.000 152.299 -2.372
0.050 235.000 231.575 -1.457
0.100 280.000 280.147 0.052
0.200 300.000 303.851 1.284
0.500 240.000 232.172 -3.262
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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17. Output Characteristics
Circuit Simulation Result
-1.0A
-0.9A
-3.5mA
-0.8A -3.0mA
-2.5mA
-0.7A
-2.0mA
-0.6A
-0.5A -1.5mA
-0.4A
-1.0mA
-0.3A
-0.2A -0.5mA
-0.1A
0A IB=-0A
0V -0.5V -1.5V -2.5V -3.0V -4.0V -5.0V
IC(X_U1.Q_Q1)
V_V1
Evaluation Circuit
U1
V1
-5Vdc
QST7TR
I1
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
17

18. Output Characteristics Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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