SPICE MODEL of TK14A55D (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: MOSFET (Professional Model)
PART NUMBER: TK14A55D
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Professional Model)

2. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
2
MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

3. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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Transconductance Characteristic
Circuit Simulation Result
Comparison table
Id(A)
gfs (s)
Error (%)
Measurement Simulation
1 3.780 3.966 4.921
2 5.330 5.515 3.471
5 8.200 8.441 2.939
10 11.250 11.520 2.400
20 15.300 15.523 1.458

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V_V1
0V 2V 4V 6V 8V 10V
I(V3)
0A
8A
16A
24A
32A
40A
V1
0Vdc
V2
20
0
V3
0Vdc
U1
TK14A55D
Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit

5. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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Comparison Graph
Circuit Simulation Result
Simulation Result
ID(A)
VGS(V)
Error (%)
Measurement Simulation
1 5.000 5.012 0.240
2 5.200 5.223 0.442
5 5.700 5.651 -0.860
10 6.200 6.151 -0.790
20 6.930 6.887 -0.620
30 7.450 7.477 0.362
40 8.000 7.991 -0.113

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V_VDS
0V 0.4V 0.8V 1.2V 1.6V 2.0V
I(V3)
0A
1.0A
2.0A
3.0A
4.0A
5.0A
6.0A
7.0A
0
V3
0Vdc
VDS
0Vdc
V1
10
U1
TK14A55D
Rds(on) Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID = 7A, VGS = 10V Measurement Simulation Error (%)
RDS (on)  0.3100 0.3110 0.323

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VDD
400
I1TD = 0
TF = 5n
PW = 600u
PER = 1000u
I1 = 0
I2 = 1m
TR = 5n -
+
W1
ION = 0uA
IOFF = 1mA
W
I2
14
0
D2
DbreakU1
TK14A55D
Time*1mA
0 20n 40n 60n 80n
V(W1:3)
0V
4V
8V
12V
16V
Gate Charge Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD=400V, ID=14A,
VGS=10V
Measurement Simulation Error (%)
Qgs nC 15.000 15.025 0.167
Qgd nC 15.000 14.992 -0.053
Qg nC 40.000 40.607 1.518

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Capacitance Characteristic
Simulation Result
VDS (V)
Cbd (pF)
Error (%)
Measurement Simulation
20 279.000 280.000 0.36
40 195.000 196.500 0.77
60 156.000 157.800 1.15
80 131.100 133.410 1.76
100 116.500 116.300 -0.17
Simulation
Measurement

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0
VDD
205Vdc
V2
TD = 1u
TF = 5n
PW = 10u
PER = 20u
V1 = 0
TR = 5n
V2 = 20
U1
TK14A55D
L2
50nH
R2
50
R1
50
L1
30nH
RL
29
Time
0.7us 0.8us 0.9us 1.0us 1.1us 1.2us 1.3us 1.4us 1.5us
V(U1:G) V(U1:D)/20.5
0V
2V
4V
6V
8V
10V
12V
14V
Switching Time Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=7A, VDD=200V
VGS=0/10V
Measurement Simulation Error(%)
ton ns 100.000 101.435 1.435

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V_V2
0V 10V 20V 30V 40V 50V
I(V3)
0A
8A
16A
24A
32A
40A
V2
50V1
0
0
V3
0Vdc
U1
TK14A55D
Output Characteristic
Circuit Simulation result
Evaluation circuit
VGS=5V
7
5.5
7.5
10 8
6.5
6

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V_VDS
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V
I(Vsense)
100mA
1.0A
10A
100A
U1
TK14A55D
VDS
0
Vsense
0Vdc
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit

12. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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Comparison Graph
Circuit Simulation Result
Simulation Result
IDR(A)
VSD(V)
%Error
Measurement Simulation
0.1 0.605 0.605 -0.066
0.2 0.630 0.631 0.159
0.5 0.670 0.667 -0.418
1.0 0.700 0.699 -0.100
2.0 0.735 0.739 0.517
5.0 0.810 0.813 0.395
10.0 0.900 0.898 -0.244
20.0 1.030 1.025 -0.476
30.0 1.130 1.134 0.319

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V1
TD = 2us
TF = 10ns
PW = 30us
PER = 50us
V1 = -9.45v
TR = 10ns
V2 = 10.65v
R1
50
0
U1
DTK14A55D_P
Time
26us 28us 30us 32us 34us 36us 38us 40us 42us
I(R1)
-400mA
-200mA
0A
200mA
400mA
Reverse Recovery Characteristics
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj us 1.040 1.038 -0.183
trb us 1.360 1.376 1.206
trr us 2.400 2.415 0.604

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Reverse Recovery Characteristic Reference
Trj= 1.04 (us)
Trb= 1.36 (us)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example
Measurement