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This document summarizes the SPICE model and characterization of a Sanyo 2SC3153 bipolar junction transistor. It includes graphs of key transistor characteristics like forward and reverse early voltage, capacitance, DC beta, saturation voltage, switching times and output characteristics from both simulation and measurement for comparison. Simulation results generally matched measurement data to within 5% error.
SPICE MODEL of 2SA1202(Y) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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This document summarizes the modeling and characterization of the NEC 2SC3632 transistor. It includes PSpice model parameters, measurements and simulations of key transistor characteristics like gain, saturation voltage, switching times and output characteristics. Graphs compare measurement data to simulation results with good agreement. The report establishes an accurate model for representing this transistor in circuit simulations.
SPICE MODEL of 2SC5980-TL-E in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SA1576AT106R in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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This document summarizes the modeling and characterization of a Sanyo 2SC3467D bipolar junction transistor. It includes the component name, part number, manufacturer, and model parameters. Graphs show characteristics such as reverse and forward early voltage, capacitance, DC beta, saturation voltage, and output characteristics from both measurement and simulation results. Comparisons between measurement and simulation validate the accuracy of the model.
SPICE MODEL of 2SC3328(Y) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
This document summarizes the modeling and characterization of the 2SC4793 transistor manufactured by Toshiba. It includes:
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SPICE MODEL of 2SC3632-AZ in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
This document contains a transistor modeling report for a NEC 2SC4331-AZ(K) transistor. It includes:
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The report provides a detailed characterization of the electrical behavior and performance of the transistor through measurements and PSpice simulations.
This document summarizes the modeling of the 2SA1680 transistor from Toshiba. It includes the PSpice model parameters and their descriptions. Graphs show simulations of characteristics like reverse/forward early voltage, DC beta, capacitance, hFE vs IC, VCE saturation, VBE saturation, and switching/output characteristics. The simulations closely match experimental measurements, validating the accuracy of the transistor model.
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This document summarizes the device modeling report for a Sanyo 2SC3467D bipolar junction transistor. It includes specifications for the transistor parameters, graphs of characteristics like early voltage and capacitance, and comparisons of circuit simulation results to measurements for properties like current gain and saturation voltage. Circuit schematics are provided for the evaluation circuits used in simulations.
SPICE MODEL of 2SA1298(Y) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of 2SA1020(Y) in SPICE PARK
1. Device Modeling Report
COMPONENTS: BIPOLAR JUNCTION TRANSISTOR
PART NUMBER: 2SA1020(Y)
MANUFACTURER: TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
2. PSpice
model Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
3. Reverse
Reverse Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
VAR
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
4. Forward
Forward Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
5. C-B Capacitance Characteristic
Measurement
Simulation
E-B Capacitance Characteristic
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005