The document is a device modeling report for the bipolar junction transistor 2SA1020(Y) by Toshiba Bee Technologies Inc. It includes detailed simulations and characteristics, such as saturation current, forward and reverse beta values, and capacitance measurements, along with circuit simulation results and comparisons with datasheet values. All content is copyright protected by Bee Technologies Inc. 2005.

1. Device Modeling Report
COMPONENTS: BIPOLAR JUNCTION TRANSISTOR
PART NUMBER: 2SA1020(Y)
MANUFACTURER: TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

2. PSpice
model Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

3. Reverse
Reverse Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
VAR
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

4. Forward
Forward Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

5. C-B Capacitance Characteristic
Measurement
Simulation
E-B Capacitance Characteristic
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

6. Switching Characteristics
Circuit simulation result
Evaluation circuit
L2
D1 R1 L1
50nH
Q1
30nH Q2SA1020_Y
DTR 90 R3
D2 R2
30
DTR 181
V1 = -4
V3 V2 = 10 V2
TD = 1u
TR = 50n
TF = 50n -30Vdc
PW = 20u
PER = 5000u
0
Simulation result
Ts(us) Tf(us)
Datasheet Simulation Error (%) Datasheet Simulation Error (%)
1 1 0 0.1 0.102 2
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

7. BJT Ic-hFE Characteristics
Circuit simulation result
Evaluation circuit
Q3
Q2SA1020_Y
I1 V1
0Adc
2Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

8. Comparison Graph
Circuit simulation result
Simulation result
hfe
Ic(A)
Datasheet simulate %Error
-0.002 135 135 0
-0.005 145 140 -3.448
-0.01 150 145 -3.333
-0.02 148 146 -1.351
-0.05 135 130 -3.703
-0.1 101 96.85 -4.108
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

9. BJT Vce (sat) voltage & Vbe (sat) voltage Characteristics
Circuit simulation result
Evaluation circuit
I2
1Adc
Q4
Q2SA1020_Y
I1
50mAdc
0
Simulation result
Test condition: IC/IB = 20, IC=-1A
Datasheet Simulation %Error
Vce(sat)(A) -0.5 -0.499 0.2
Vbe(sat)(A) -1.2 -1.199 -0.083
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

10. Output Characteristics
Circuit simulation result
IB = -40mA
IB = -20mA
IB = -10mA
IB = -5mA
Evaluation circuit
Q4
Q2SA1020_Y
I1 V1
0Adc
2Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005