SPICE MODEL of 2N5061 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS:THYRISTOR
PART NUMBER:2N5061
MANUFACTURER: ON SEMICONDUCTOR
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

2. DIODE MODEL
Pspice model
Model description
Parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

3. IG-VT Characteristic
Evaluation Circuit
Simulation result
Simulation
Comparison Table
Measurement Simulation % Error
IGT (uA) 200(max) 199.048 -0.47600
VGT (V) 0.8(max) 0.792363 -0.95463
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

4. ITM-VTM Characteristic
Evaluation Circuit
Simulation result
Simulation
Comparison Table
At ITM=1.2 Measurement Simulation % Error
VTM(V) 1.7(max) 1.6970 -0.17647
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

5. Holding Characteristic (IH)
Evaluation Circuit
RL
A
325
Rg U6
G 2N5061 VOFF = 0 VAK
VAMPL = 7
V1 = 0 1k FREQ = 50
V2 = 5V K
TD = 5ms
TR = 1us V1
TF = 1us
PW = 1ms
PER = 20ms
0
Simulation result
Simulation
Comparison Table
VD=7V Measurement Simulation % Error
IH(mA) 5(max) 4.7542 -4.91600
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

6. Switching Time Characteristic
Evaluation Circuit
Simulation result
Simulation
Comparison Table
Measurement Simulation %Error
Ton(us) 3 3.0158 0.52667
Toff(us) 10 10.033 0.33000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004