SPICE MODEL of 2SK2414 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: MOSFET (Professional Model)
PART NUMBER: 2SK2414
MANUFACTURER: NEC Corporation
REMARK: Body Diode (Professional Model) /
ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

2. MOSFET MODEL PARAMETERS
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

3. Transconductance Characteristic s
Circuit Simulation Result
100
Measurement
Simulation
TRANSCONDUCTANCE Gfs(s)
10
1
0 5 10 15 20
DRIAN CURRENT ID (A)
Comparison table
gfs(s)
Id(A) Error(%)
Measurement Simulation
1 5.535 5.435 -1.807
2 7.591 7.491 -1.317
5 11.390 11.499 0.961
10 15.385 15.212 -1.120
20 20.665 19.802 -4.176
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

4. Vgs-Id Characteristics
Circuit Simulation Result
100A
10A
1.0A
100mA
0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V
I(V2)
V_VGS
Evaluation circuit
Vsense
U1 2SK2414
VDS
10Vdc
VGS
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

5. Comparison Graph
Circuit Simulation Result
100
ID - Drain Current -A
10
1
Measurement
Simulation
0.1
1 2 3 4 5
VGS - Gate to Source Voltage - V
Comparison table
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.1 1.950 1.884 -3.369
0.2 1.980 1.932 -2.424
0.5 2.050 2.028 -1.088
1 2.150 2.137 -0.595
2 2.300 2.295 -0.222
5 2.600 2.618 0.696
10 3.000 2.999 -0.050
20 3.700 3.563 -3.716
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

6. *Rds(on) Characteristic
Circuit Simulation result
5.0A
4.0A
3.0A
2.0A
1.0A
0A
0V 0.2V 0.4V 0.6V 0.8V 1.0V
I(V2)
V_VDD
Evaluation circuit
V2
U1 2SK2414
VDD
VGS 10Vdc
10Vdc
0
0
0
Simulation Result
ID=5.0A, VGS=10V Measurement Simulation Error (%)
R DS (on) 52.00 m 52.00 m 0.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

7. Gate Charge Characteristic
Circuit Simulation result
16V
14V
12V
10V
8V
6V
4V
2V
0V
0 5n 10n 15n 20n 24n
V(W1:3)
Time*1mA
Evaluation circuit
Vsense
U5 I1
2SK2414_P D1
Dbreak 10Adc
W1
+
I2
-
W VD
ION = 0A 48Vdc
IOFF = 1.1mA
0
Simulation Result
VDD=48V,ID=10A,
VGS=10V Measurement Simulation Error (%)
QGS nC 2.600 2.605 0.192
QGD nC 6.000 6.073 1.217
QG nC 24.000 24.000 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd (pF)
VDS(V) Error(%)
Measurement Simulation
1 600.00 600.00 0.00
2 510.00 508.00 -0.39
5 400.00 388.00 -3.00
10 320.00 309.00 -3.44
20 250.00 248.00 -0.80
50 165.00 160.00 -3.03
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

9. Switching Time Characteristic
Circuit Simulation result
12V
10V
8V
6V
4V
2V
0V
-2V
0.95us 1.00us 1.05us 1.10us
V(3)/3.0 V(L3:2)
Time
Evaluation circuit
Vsense RL
3
6.0
R1 L3 U2
2 2SK2414
VDD
30nH
V1 = 0 10 30Vdc
V2 = 20
TD = 1u V1
TF = 1n R2
TR = 1n
PW = 1u 10
PER = 10m
0
Simulation Result
ID=5.0A, VDD=30V
Measurement Simulation Error(%)
VGS=0/10V
td(on) ns 15.00 15.01 0.067
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

10. Output Characteristic
Circuit Simulation result
50A
VGS =10V VGS= 6.0V
40A
VGS=4.0V
30A
20A
10A
0A
0V 2.0V 4.0V 6.0V 8.0V 10.0V
I(V2)
V_VDS
Evaluation circuit
V2
U1 2SK2414
VDS
VGS 10Vdc
0Vdc
0
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

11. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V
I(V2)
V_VDS
Evaluation Circuit
V2
U1 2SK2414
VDS
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

12. Comparison Graph
Circuit Simulation Result
100
Measurement
Simulation
ISD - Diode Forward Current - A
10
1
0.1
0 1 2
VSD - Source to Drain Voltage - V
Simulation Result
VDS(V)
ISD(A) Measurement Simulation %Error
0.1 0.6400 0.6401 0.0156
0.2 0.6550 0.6652 1.5573
0.5 0.6800 0.6794 -0.0882
1 0.7000 0.7032 0.4571
2 0.7400 0.7376 -0.3243
5 0.8200 0.8182 -0.2195
10 0.9500 0.9365 -1.4211
20 1.1400 1.1601 1.7632
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
14.7us 14.9us 15.1us 15.3us 15.5us 15.7us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.5V
V2 = 10.5
TD = 50n V1 U1 2SK2414
TR = 10n
TF = 10n
PW = 15us
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trr (ns) 130.00 130.10 0.077
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

14. Reverse Recovery Characteristic Reference
Trj=60.0(ns)
Trb=70.0(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

15. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 10V 20V 30V 40V 50V 60V 70V 80V 90V
I(V2)
V_VGS
Evaluation Circuit
U2
2SK2414
V2
ID 0Adc
VGS
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007