SPICE MODEL of 2SK2462 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameter)
PART NUMBER: 2SK2462
MANUFACTURER: NEC
Body Diode (Model Parameter)
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

2. Circuit Configuration
MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

3. Transconductance Characteristic
Circuit Simulation Result
25
Measurement
Simulation
20
15
gfs
10
5
0
1.0 3.0 5.0 7.0 9.0 11.0 13.0 15.0
ID : Drain Current A
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
1.000 5.500 5.587 1.582
2.000 7.650 7.752 1.333
5.000 13.850 14.006 1.126
8.000 16.150 16.529 2.347
10.000 17.250 17.750 2.899
12.000 18.200 18.649 2.467
14.000 19.105 19.691 3.067
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

4. Vgs-Id Characteristic
Circuit Simulation result
1.0KA
100A
10A
1.0A
0V 2V 4V 6V 8V 10V 12V 14V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U1
2SK2462
Vv ariable
10Vdc
20Vdc
V2
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

5. Comparison Graph
Circuit Simulation Result
100.00
Measurement
Simulation
ID : Drain Current A
10.00
1.00
1.0 2.0 3.0 4.0 5.0
VGS : Gate to Source Voltage V
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
1.000 2.300 2.333 1.435
2.000 2.450 2.477 1.102
5.000 2.700 2.776 2.815
8.000 2.900 2.991 3.138
10.000 3.050 3.126 2.492
12.000 3.200 3.235 1.094
14.000 3.300 3.354 1.636
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

6. Rds(on) Characteristic
Circuit Simulation result
10A
8A
6A
4A
2A
0A
0V 0.2V 0.4V 0.6V 0.8V 1.0V
I(V3)
V_VDS
Evaluation circuit
V3
0Vdc
U1
2SK2462
VDS
10Vdc
0Vdc
VGS
0
Simulation Result
ID=8A, VGS=10V Measurement Simulation Error (%)
R DS (on) () 0.100 0.100 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

7. Gate Charge Characteristic
Circuit Simulation result
16V
14V
12V
10V
8V
6V
4V
2V
0V
0 10n 20n 30n 40n
V(W1:3)
Time*1mS
Evaluation circuit
V2
0Vdc
U1
PER = 1000u 2SK2462 Dbreak
PW = 600u W1
TF = 10n + D1
TR = 10n I2
TD = 0
- 15Adc
I2 = 1m W
I1 = 0 I1 IOFF = 0.1mA
ION = 0uA
V1
80Vdc
0
Simulation Result
VDD=80V,ID=15A
Measurement Simulation Error (%)
,VGS=10V
Qgs(nc) 3.000 3.030 -0.990
Qgd(nc) 9.000 8.900 -1.111
Qg(nc) 33.000 18.748 -43.188
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
1.000 480.000 476.000 -0.833
2.000 360.000 365.000 1.389
5.000 260.000 258.000 -0.769
8.000 208.000 195.000 -6.250
10.000 147.000 146.000 -0.680
12.000 92.000 95.000 3.261
14.000 70.000 72.000 2.857
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

9. Switching Time Characteristic
Circuit Simulation result
16V
14V
12V
10V
8V
6V
4V
2V
0V
1.6us 1.8us 2.0us 2.2us 2.4us 2.6us
V(2) V(3)/5
Time
Evaluation circuit
3 L2
30n
RL
R1 L1 2 U1
6.25
2SK2462
V1 = 0 10 30nH
V2 = 20 V2 VDD
TD = 2u R2 50Vdc
TR = 6n
TF = 7n 10
PW = 2u
PER = 10u
0
Simulation Result
ID=8A, VDD=50V
Measurement Simulation Error(%)
VGS=10V
Ton(ns) 16.000 16.027 0.169
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

10. Output Characteristic
Circuit Simulation result
50A
10 V 6V
40A
30A VGS= 4 V
20A
10A
0A
0V 2.0V 4.0V 6.0V 8.0V
I(Vdsense)
V_Vvariable
Evaluation circuit
Vdsense
0Vdc
U1
2SK2462
Vv ariable
10Vdc
0Vdc
Vstep
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

11. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
0V 0.4V 0.8V 1.2V 1.6V 2.0V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc U1
2SK2462
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

12. Comparison Graph
Circuit Simulation Result
100.00
Measurement
Simulation
Drain reverse current IDR(A)
10.00
1.00
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Source: Drain voltage VSD(V)
Simulation Result
VDS(V) VDS(V)
IDR(A) %Error
Measurement Simulation
1.000 0.705 0.704 -0.142
2.000 0.750 0.759 1.200
5.000 0.860 0.860 0.000
8.000 0.920 0.927 0.761
10.000 0.960 0.964 0.417
12.000 1.000 0.998 -0.200
14.000 1.020 1.030 0.980
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
19.8us 20.0us 20.2us 20.4us 20.6us 20.8us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.4v V1
V2 = 10.6v
TD = 80n U1
TR = 10ns 2SK2462
TF = 19ns
PW = 20us
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
Trr(ns) 210.000 210.998 0.475
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

14. Reverse Recovery Characteristic Reference
Trj= 108 (ns)
Trb= 102 (ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008