SPICE MODEL of TPC6004 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameter)
PART NUMBER: TPC6004
MANUFACTURER: TOSHIBA
Body Diode (Model Parameter) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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2. Circuit Configuration
TPC6004
MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
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3. Transconductance Characteristic
Circuit Simulation Result
20
Measurement
Simulation
15
gfs
10
5
0
0 0.5 1 1.5 2
ID : Drain Current A
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
0.010 0.967 0.942 -2.637
0.020 1.583 1.546 -2.331
0.050 2.633 2.547 -3.266
0.100 3.837 3.664 -4.519
0.200 5.380 5.139 -4.480
0.500 8.133 7.936 -2.428
1.000 11.047 10.886 -1.457
2.000 14.953 14.740 -1.424
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3

4. Vgs-Id Characteristic
Circuit Simulation result
12A
10A
8A
6A
4A
2A
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(V3)
V_V2
Evaluation circuit
V3
0V dc
Vvari abl e
10 Vd c U1 TP C60 04
10 Vd c
V2
0
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5. Comparison Graph
Circuit Simulation Result
12
Measurement
Simulation
10
8
ID : Drain Current A
6
4
2
0
0 1 2 3 4 5
VGS : Gate to Source Voltage V
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.100 1.100 1.137 3.400
0.200 1.120 1.160 3.580
0.500 1.190 1.205 1.294
1.000 1.230 1.259 2.317
2.000 1.300 1.336 2.762
5.000 1.450 1.501 3.531
10.000 1.630 1.703 4.491
12.000 1.700 1.773 4.265
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
5

6. Rds(on) Characteristic
Circuit Simulation result
5.0A
4.0A
3.0A
2.0A
1.0A
0A
0V 20mV 40mV 60mV 80mV 100mV
I(V3)
V_VDS
Evaluation circuit
V3
U1
0V dc
VDS
4.5 Vdc TP C60 04
0V dc
VG S
0
Simulation Result
ID=3A, VGS=4.5V Measurement Simulation Error (%)
R DS (on) (m) 19.000 19.001 0.005
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6

7. Gate Charge Characteristic
Circuit Simulation result
20V
16V
12V
8V
4V
0V
0 8n 16n 24n 32n 40n
V(W1:3)
Time*1mS
Evaluation circuit
V2
U1
0V dc
PE R = 10 00u Db re ak
PW = 6 00u W1
TF = 10n + D1
TR = 1 0n TP C60 04 I2
TD = 0
- 6A dc
I2 = 1m W
I1 = 0 I1 IOFF = 0.1mA
ION = 0u A
V1
16 Vd c
0
Simulation Result
VDD=16V,ID=6A
Measurement Simulation Error (%)
,VGS=5V
Qgs(nc) 2.500 2.496 -0.172
Qgd(nc) 4.000 4.000 0.000
Qg(nc) 17.500 12.034 -31.234
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7

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.1 122.000 122.000 0.000
0.2 110.000 110.200 0.182
0.5 89.000 89.500 0.562
1 71.000 71.000 0.000
2 53.000 53.500 0.943
5 35.000 35.100 0.286
10 25.000 25.250 1.000
20 18.000 17.900 -0.556
30 15.000 14.500 -3.333
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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9. Switching Time Characteristic
Circuit Simulation result
6.0V
5.0V
4.0V
3.0V
2.0V
1.0V
0V
1.92us 1.96us 2.00us 2.04us 2.08us 2.12us
V(2) V(3)/2
Time
Evaluation circuit
3 L2
U1 50 nH
RL
R1 L1 2
3.3
30 nH
4.7
V1 = 0 TP C60 04
V2 = 10 V2 VDD
TD = 2 u R2 10 Vd c
TR = 1 n
TF = 1n 4.7
PW = 2 u
PE R = 10 u
0
Simulation Result
ID=3A, VDD=10V Measurement Simulation Error(%)
VGS=5V
Ton(ns) 10.000 10.006 0.060
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
9

10. Output Characteristic
Circuit Simulation result
10A
1.8V
1.7V
2V
8A 4V
6,8,10 V
1.6V
6A
1.5V
4A
1.4V
2A
1.3V
VGS=1.2V
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(Vdsense)
V_Vvariable
Evaluation circuit
Vd se nse
U1
0V dc
Vvari abl e
10 Vd c TP C60 04
0V dc
Vstep
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
10

11. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
0V 0.4V 0.8V 1.2V 1.6V 2.0V
I(R1)
V_V1
Evaluation Circuit
R1
0.0 1m
TP C60 04
V1
0V dc
U1
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
11

12. Comparison Graph
Circuit Simulation Result
100.00
Measurement
Simulation
Drain reverse current IDR(A)
10.00
1.00
0.10
0 0.4 0.8 1.2 1.6 2
Source Drain voltage VSD(V)
Simulation Result
IDR(A) VSD(V) VSD(V) %Error
Measurement Simulation
0.100 0.500 0.498 -0.500
0.200 0.530 0.521 -1.623
0.500 0.570 0.561 -1.667
1.000 0.615 0.600 -2.504
2.000 0.670 0.650 -2.940
5.000 0.770 0.745 -3.208
10.000 0.870 0.859 -1.253
20.000 1.030 1.049 1.854
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
12

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
19.88us 19.96us 20.04us 20.12us 20.20us 20.28us
I(R1)
Time
Evaluation Circuit
R1
TP C60 04
50
V1 = -9 .4 9V V1
V2 = 10.4 8V
TD = 2 5n
TR = 1 0n s
TF = 10n s U1
PW = 2 0u s
PE R = 10 0us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
Trj(ns) 16.000 16.008 0.050
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13

14. Reverse Recovery Characteristic Reference
Trj=16(ns)
Trb=23.2(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
14

15. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1
Evaluation Circuit
R1
0.0 1m U1
TP C60 04
V1
0V dc
R2
10 0ME G
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
16