SPICE MODEL of 2SA1015 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: BIPOLAR JUNCTION TRANSISTOR
PART NUMBER: 2SA1015
MANUFACTURER: TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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2. BJT SPICE Model Parameters
PSpice model
Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
Coefficient for Onset of Forward-bias Depletion
FC
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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3. Reverse
Reverse Early Voltage Characteristic
Collector current IC (A)
Collector-emitter voltage VCE (V)
Ic
VAR
Vce
Y=aX+b
(X1,Y1)
(X2,Y2)
All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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4. Forward
Reverse
Forward Early Voltage Characteristic
Collector current IC (A)
Collector-emitter voltage VCE (V)
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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5. C-B Capacitance Characteristics
Measurement
Simulation
REVERSE VOLTAGE VR (V)
E-B Capacitance Characteristics
Measurement
Simulation
REVERSE VOLTAGE VR (V)
All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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6. Transistor hFE-IC Characteristics
Simulation result
1.0K
100
10
-1.0mA -100mA
IC(Q1)/ IB(Q1)
IC(Q1)
Evaluation circuit
Q1
Q2SA1015
V1
I1 -6Vdc
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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7. Comparison Graph
Simulation result
Comparison table
hFE
IC (A) %Error
Measurement Simulation
-0.001 190.000 193.958 2.083
-0.002 190.000 195.593 2.944
-0.005 190.000 196.106 3.214
-0.01 190.000 194.566 2.403
-0.02 190.000 190.320 0.168
-0.05 180.000 178.400 -0.889
-0.1 160.000 163.546 2.216
All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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8. VCE(Sat)-IC Characteristics
Simulation result
0V
-100mV
-200mV
0s 0.5s 1.0s
V(Q1:c)
Time
Evaluation circuit
Q1 I2
Q2SA1015 -100mA
I1
-10mA
0
Comparison table
Test Condition: IC/IB = 10, IC=-100mA
VCE(sat) (V)
IC (mA) %Error
Measurement Simulation
-100 -0.100 -0.101 1.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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9. VBE(Sat)-IC Characteristics
Simulation result
-0.0V
-0.4V
-0.8V
-1.2V
-1.6V
-2.0V
0s 0.5s 1.0s
V(Q1:b)
Time
Evaluation circuit
Q1 I2
Q2SA1015 -100mA
I1
-10mA
0
Comparison table
Test Condition: IC/IB = 10, IC=-100mA
VBE(sat) (V)
IC (mA) %Error
Measurement Simulation
-100 -0.900 -0.897 -0.333
All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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10. Output Characteristics
Simulation result
-240mA
-2.0mA -1.5mA
-160mA
-1.0mA
-80mA -0.5mA
IB=-0.2mA
0A
0V -2.0V -4.0V -6.0V -8.0V
IC(Q1)
V_VCE
Evaluation circuit
Q1
Q2SA1015
I1 VCE
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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11. Output Characteristics Reference
Collector current IC (A)
Collector-emitter voltage VCE (V)
All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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