This document contains a device modeling report for a TLP172A photocoupler made by Toshiba. It includes the SPICE model, equivalent circuit diagram, and simulation results for the forward current, capacitance, off-state current, trigger LED current, and I-V characteristics of the photocoupler, as well as comparisons to measurement data. Switching time characteristics are also provided from a circuit simulation with a 5mA forward current and 20V power supply.

1. All Rights Reserved Copyright (C) Bee Technologies Corporation 2009
Device Modeling Report
Bee Technologies Inc.
COMPONENTS : PHOTOCOUPLER
PART NUMBER : TLP172A
MANUFACTURER : TOSHIBA
REMARK : OUTPUT MOSFET

2. All Rights Reserved Copyright (C) Bee Technologies Corporation 2009
U1
TLP172A
1
2 3
4
Circuit Configuration
SPICE MODEL
*$
*PART NUMBER : TLP172A
*MANUFACTURER : TOSHIBA
*VOFF=60V,IF=50mA
* All Rights Reserved Copyright (C) Bee Technologies Corporation 2009
.SUBCKT TLP172A 1 2 3 4
C_C1 A 4 0.8pF
E_EGS G S VALUE {
+ IF((I(V_Vsense))<0.1m,0,(18.277+3.597*LOG10(I(V_Vsense)))) }
R_R1 A 4 100000G
V_VSense 1 A 0Vdc
D_D1 A 2 DTLP172A
M_M1 4 G S S NMOS
M_M2 3 G S S NMOS
C_C2 2 3 0.8pF
R_R2 2 3 100000G
D_D2 S 4 DIO
D_D3 S 3 DIO
.MODEL DTLP172A D
+ IS=752.31E-15 N=1.8990 RS=.88055 IKF=47.440E-3
+ CJO=10.741E-12 M=.34734 VJ=.73435
+ BV=100 IBV=100.00E-6 TT=5.0000E-9
.MODEL nmos NMOS
+ LEVEL=3 L=2.0000E-6 W=4.0300 RS=1.0000E-3 RD=.2 VTO=7.6000
+ RDS=60.000E6 TOX=2.0000E-6 CGSO=950.00E-9 CGDO=100.00E-12
+ CBD=130.00E-12 RG=135 IS=1.0000E-15 N=5
+ RB=1 GAMMA=0 KAPPA=0
.MODEL DIO D
+ RS=1.0000E-3 CJO=0.10E-12 M=.3333 VJ=.75
+ BV=100 IBV=100.00E-6 TT=5.0000E-9
.ENDS
*$

3. All Rights Reserved Copyright (C) Bee Technologies Corporation 2009
Equivalent Circuit
D1
DTLP172A
M1
NMOS
M2
NMOS
D2
DIO
D3
DIO
G
IN+
IN-
OUT+
OUT-
EGS
IF((I(Vsense))<0.1m,0,(18.277+3.597*LOG10(I(Vsense))))
EVALUE
S
A
0
VSense
0Vdc
4
2
1
3
C1
0.8pF
R1
100000G
C2
0.8pF
R2
100000G
S

4. All Rights Reserved Copyright (C) Bee Technologies Corporation 2009
V(U1:1)
0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V
I(VSense)
1.0mA
10mA
100mA
102uA
Forward current Characteristics
Simulation result
Evaluation Circuit
U1
TLP172A
0
I1
VSense
0

5. All Rights Reserved Copyright (C) Bee Technologies Corporation 2009
0.1
1
10
100
0.6 0.8 1 1.2 1.4 1.6 1.8
Forwardcurrent:IF(mA)
Forward voltage : VF ( V )
Measurement
Simulation
Comparison Graph
Comparison Graph
Comparison Table
Ifwd (mA)
Vfwd(V)
% Error
Measurement Simulation
0.1 0.905 0.918 1.44
0.2 0.955 0.953 -0.21
0.5 1.008 0.998 -0.99
1 1.043 1.033 -0.96
2 1.072 1.068 -0.37
5 1.110 1.117 0.63
10 1.150 1.158 0.70
20 1.200 1.206 0.50
50 1.300 1.292 -0.62
100 1.390 1.391 0.07

6. All Rights Reserved Copyright (C) Bee Technologies Corporation 2009
V(U1:2)
100mV 1.0V 10V
I(V2)/(5/100ns)
1.0p
10p
100p
Capacitance Characteristics
Simulation result
Evaluation Circuit
U1
TLP172A
0 0
I1
0Adc
V1
TD = 0
TF = 10ns
PW = 20us
PER = 10us
V1 = 0
TR = 100ns
V2 = 5
V2
0Vdc

7. All Rights Reserved Copyright (C) Bee Technologies Corporation 2009
0.1
1.0
10.0
100.0
0.1 1.0 10.0
Capacitance(pF)
Reverse voltage (V)
Measurement
Simulation
Comparison Graph
Comparison Graph
Comparison Table
VR (V)
CT (pF)
% Error
Measurement Simulation
0.1 11.063 11.080 0.15
0.2 10.696 10.684 -0.11
0.5 9.761 9.771 0.10
1.0 8.777 8.761 -0.18
2.0 7.592 7.600 0.11
5.0 6.065 6.057 -0.13

8. All Rights Reserved Copyright (C) Bee Technologies Corporation 2009
U1
TLP172A
I1
0Adc
0 0
V1
60Vdc
Vsense
0Vdc
V_V1
0V 20V 40V 60V
I(Vsense)
0A
0.5uA
1.0uA
OFF-state current Characteristics
Simulation result
Evaluation Circuit
Comparison Table
VOFF=60V Measurement Simulation % Error
IOFF(uA) 1 0.992 -0.80

9. All Rights Reserved Copyright (C) Bee Technologies Corporation 2009
I1
1.6mAdc
00
V1
20Vdc
Vsense
0Vdc
U1
TLP172A
V_V1
0V 5V 10V 15V 20V
I(Vsense)
0A
250mA
500mA
Trigger LED current Characteristics
Simulation result
Evaluation Circuit
Comparison Table
ION=400 mA Measurement Simulation % Error
IFT (mA) 1.6 1.6 0.00

10. All Rights Reserved Copyright (C) Bee Technologies Corporation 2009
I1
1.6mAdc
00
V1
20Vdc
Vsense
0Vdc
U1
TLP172A
V_V1
-600mV -400mV -200mV -0mV 200mV 400mV 600mV
I(Vsense)
-600mA
-400mA
-200mA
-0mA
200mA
400mA
600mA
ION - VON Characteristics
Simulation result
Evaluation Circuit

11. All Rights Reserved Copyright (C) Bee Technologies Corporation 2009
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
-0.6 -0.4 -0.2 0.0 0.2 0.4 0.6
COLLECTORCURRENT:IC[A]
GATE-EMITTER VOLTAGE: VGE [V]
measurement
simulation
Comparison Graph
Comparison Graph
Comparison Table
VON (V)
ION (A)
% Error
Measurement Simulation
-0.4 -0.500 -0.499 -0.20
-0.2 -0.250 -0.249 -0.40
0.0 0.000 0.000 0.00
0.2 0.250 0.249 -0.40
0.4 0.500 0.499 -0.20

12. All Rights Reserved Copyright (C) Bee Technologies Corporation 2009
V2
20
00
RL
200
I1TD = 1m
TF = 10u
PW = 2mS
PER = 10m
I1 = 0
I2 = 5mA
TR = 10u
VSense
0Vdc
U1
TLP172A
Time
5ms 10ms 15ms 20ms 25ms
1 V(U1:4) 2 I(VSense)
0V
10V
20V
30V
40V
1
>>
0A
2.5mA
5.0mA
7.5mA
10.0mA
2
Switching Time Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
IF=5mA, VDD=20V
RL= 200Ω
Measurement Simulation Error (%)
ton us 800.000 798.430 -0.20
toff us 140.000 143.677 2.63