SPICE MODEL of 2SA1313 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: BIPOLAR JUNCTION TRANSISTOR
PART NUMBER: Q2SA1313
MANUFACTURER: TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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2. BJT SPICE Model Parameters
PSpice model
Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
Coefficient for Onset of Forward-bias Depletion
FC
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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3. Reverse
Reverse Early Voltage Characteristic
Ic
VAR
Vce
Y=aX+b
(X1,Y1)
(X2,Y2)
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4. Reverse DC Beta Characteristic (IE vs. hFE)
Measurement
Simulation
Emitter Current (A)
All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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5. Forward
Forward Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
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6. C-B Capacitance Characteristics
Measurement
Simulation
REVERSE VOLTAGE VR (V)
E-B Capacitance Characteristics
Measurement
Simulation
REVERSE VOLTAGE VR (V)
All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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7. Transistor hFE-IC Characteristics
Simulation result
3.0K
1.0K
100
10
-100uA -1.0A
IC(Q1)/ IB(Q1)
IC(Q1)
Evaluation circuit
Q1
Q2SA1313 V1
-6V
I1
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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8. Comparison Graph
Simulation result
Comparison table
hFE
- IC(mA) %Error
Measurement Simulation
0.5 150.000 148.455 -1.03
1 155.000 153.203 -1.16
2 160.000 157.250 -1.72
5 165.000 161.411 -2.18
10 168.000 163.432 -2.72
20 169.000 164.017 -2.95
50 166.000 160.946 -3.04
100 159.000 153.238 -3.62
200 142.000 137.201 -3.38
500 100.000 96.681 -3.32
All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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9. VCE(Sat)-IC Characteristics
Simulation result
-500mV
-10mV
-1.0mA -1.0A
V(Q1:c)
IC(Q1)
Evaluation circuit
VC
Q1
Q2SA1313
F1
0Adc F
10
I1
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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10. Comparison Graph
Simulation result
Comparison table
VCE(sat) (-V)
- IC(mA) %Error
Measurement Simulation
1 0.0400 0.0414 3.43
2 0.0390 0.0388 -0.45
5 0.0380 0.0373 -1.93
10 0.0390 0.0386 -1.14
20 0.0420 0.0436 3.86
50 0.0585 0.0606 3.61
100 0.0870 0.0875 0.60
200 0.1400 0.1375 -1.82
500 0.2750 0.2767 0.63
All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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11. VBE(Sat)-IC Characteristics
Simulation result
-5.0V
-100mV
-1.0mA -1.0A
V(Q1:b)
IC(Q1)
Evaluation circuit
VC
Q1
Q2SA1313
F1
0Adc F
10
I1
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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12. Comparison Graph
Simulation result
Comparison table
- VBE(sat) (V)
- IC(mA) %Error
Measurement Simulation
1 0.638 0.639 0.13
2 0.658 0.658 0.01
5 0.688 0.684 -0.55
10 0.712 0.705 -0.99
20 0.738 0.727 -1.49
50 0.750 0.759 1.17
100 0.778 0.785 0.90
200 0.808 0.813 0.63
500 0.856 0.854 -0.27
All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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13. Transition Frequency Characteristics
Simulation result
10G
1.0G
100M
10M
100u 1.0m 10m 100m 200m
ZeroCross(DB(IC(Q2)))
V_Ic
Evaluation circuit
H1
IDB
+
-
H
0
Q1 Q2
Q2SA1313 Q2SA1313 Vce
G1 F1 -6Vdc
IC + I1
Ic 0 0 1Aac
-
G 0Adc
10m F 0
GAIN = 1e6 0 0
0 0
Comparison table
Parameter Measurement Simulation %Error
Ft (MHz) at IC=-20mA 200.000 199.156 -0.422
All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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14. Output Characteristics
Simulation result
-600mA
-8mA -7mA
-6mA
-500mA
-5mA
-400mA -4mA
-3mA
-300mA
-2mA
-200mA
IB=-1mA
-100mA
0A
0V -1.0V -2.0V -3.0V -4.0V -5.0V -6.0V -7.0V
IC(Q1)
V_V1
Evaluation circuit
V1
Q1
Q2SA1313 -6Vdc
I1
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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15. Output Characteristics Reference
=
All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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