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Device Modeling Report




COMPONENTS:BIPOLAR JUNCTION TRANSISTOR
PART NUMBER:MJ2955 (PNP)
MANUFACTURER: ST Microelectronics




                 Bee Technologies Inc.


   All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Pspice
  model                                Model description
parameter
    IS       Saturation Current
    BF       Ideal Maximum Forward Beta
    NF       Forward Current Emission Coefficient
   VAF       Forward Early Voltage
   IKF       Forward Beta Roll-off Knee Current
   ISE       Non-ideal Base-Emitter Diode Saturation Current
   NE        Non-ideal Base-Emitter Diode Emission Coefficient
   BR        Ideal Maximum Reverse Beta
   NR        Reverse Emission Coefficient
   VAR       Reverse Early Voltage
   IKR       Reverse Beta Roll-off Knee Current
   ISC       Non-ideal Base-Collector Diode Saturation Current
   NC        Non-ideal Base-Collector Diode Emission Coefficient
   NK        Forward Beta Roll-off Slope Exponent
   RE        Emitter Resistance
   RB        Base Resistance
   RC        Series Collector Resistance
   CJE       Zero-bias Emitter-Base Junction Capacitance
   VJE       Emitter-Base Junction Potential
   MJE       Emitter-Base Junction Grading Coefficient
   CJC       Zero-bias Collector-Base Junction Capacitance
   VJC       Collector-base Junction Potential
  MJC        Collector-base Junction Grading Coefficient
    FC       Coefficient for Onset of Forward-bias Depletion
             Capacitance
   TF        Forward Transit Time
  XTF        Coefficient for TF Dependency on Vce
  VTF        Voltage for TF Dependency on Vce
  ITF        Current for TF Dependency on Ic
  PTF        Excess Phase at f=1/2pi*TF
  TR         Reverse Transit Time
  EG         Activation Energy
  XTB        Forward Beta Temperature Coefficient
  XTI        Temperature Coefficient for IS
            All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Reverse Characteristic

Reverse Early Voltage Characteristic




                                     Ic




                                                 VAR
                                                                  Vce



                                                   Y=aX+b
                                (X1,Y1)
                           (X2,Y2)


            All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Reverse DC Beta Characteristic (Ie vs. hFE)




                                                           Measurement
                                                           Simulation




            All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Forward Characteristic

Forward Early Voltage Characteristic




                                 Ic   (X2,Y2)

             Y=aX+b                                           (X1,Y1)




                                                              Vce
                    VAF




            All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Forward DC Beta Characteristic




                                                      Measurement
                                                      Simulation




Vbe(sat) Voltage Characteristic




                                                      Measurement
                                                      Simulation




            All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Vce(sat) Voltage Characteristic




                                                      Measurement
                                                      Simulation




C-B Capacitance Characteristic



                                                         Measurement
                                                         Simulation




            All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
E-B Capacitance Characteristic




                                                          Measurement
                                                          Simulation




           All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
BJT Ic-hFE Characteristics

Evaluation circuit




                                                Q1
                                                QMJ2955


                                                                               V1
                                                                      -4

                 I1

                -7




                                            0




Circuit simulation result




                                                                 Simulation




                All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Comparison Table



                           hFE                    hFE
        Ifwd(A)                                                       %Error
                       Measurement             Simulation
          -0.1               135                  139.077             -3.020

          -0.2               125                  128.225             -2.580

          -0.5               100                  103.388             -3.388

           -1                 75                  78.223              -4.297

           -2                 52                  53.028              -1.977

           -5                 26                  27.474              -5.669

          -10                 15                  15.457              -3.047




             All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
BJT Vce(sat) voltage& Vbe(sat) voltage Characteristics

Evaluation circuit




                                            Q1
                                            QMJ2955

                                                                               I2

                                                                           -4
                 I1

                     -400m




                                           0



Circuit simulation result




                                                       Vce(sat)




Comparison Table


     Ic=-4A,Ib=-0.4A           Measurement              Simulation                  %Error
        Vce(sat) (V)              -1(max)                 0.42118                     0

                All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
BJT Output Characteristic




Circuit simulation result




                All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

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Modeling Report for PNP BJT MJ2955

  • 1. Device Modeling Report COMPONENTS:BIPOLAR JUNCTION TRANSISTOR PART NUMBER:MJ2955 (PNP) MANUFACTURER: ST Microelectronics Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
  • 2. Pspice model Model description parameter IS Saturation Current BF Ideal Maximum Forward Beta NF Forward Current Emission Coefficient VAF Forward Early Voltage IKF Forward Beta Roll-off Knee Current ISE Non-ideal Base-Emitter Diode Saturation Current NE Non-ideal Base-Emitter Diode Emission Coefficient BR Ideal Maximum Reverse Beta NR Reverse Emission Coefficient VAR Reverse Early Voltage IKR Reverse Beta Roll-off Knee Current ISC Non-ideal Base-Collector Diode Saturation Current NC Non-ideal Base-Collector Diode Emission Coefficient NK Forward Beta Roll-off Slope Exponent RE Emitter Resistance RB Base Resistance RC Series Collector Resistance CJE Zero-bias Emitter-Base Junction Capacitance VJE Emitter-Base Junction Potential MJE Emitter-Base Junction Grading Coefficient CJC Zero-bias Collector-Base Junction Capacitance VJC Collector-base Junction Potential MJC Collector-base Junction Grading Coefficient FC Coefficient for Onset of Forward-bias Depletion Capacitance TF Forward Transit Time XTF Coefficient for TF Dependency on Vce VTF Voltage for TF Dependency on Vce ITF Current for TF Dependency on Ic PTF Excess Phase at f=1/2pi*TF TR Reverse Transit Time EG Activation Energy XTB Forward Beta Temperature Coefficient XTI Temperature Coefficient for IS All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
  • 3. Reverse Characteristic Reverse Early Voltage Characteristic Ic VAR Vce Y=aX+b (X1,Y1) (X2,Y2) All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
  • 4. Reverse DC Beta Characteristic (Ie vs. hFE) Measurement Simulation All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
  • 5. Forward Characteristic Forward Early Voltage Characteristic Ic (X2,Y2) Y=aX+b (X1,Y1) Vce VAF All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
  • 6. Forward DC Beta Characteristic Measurement Simulation Vbe(sat) Voltage Characteristic Measurement Simulation All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
  • 7. Vce(sat) Voltage Characteristic Measurement Simulation C-B Capacitance Characteristic Measurement Simulation All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
  • 8. E-B Capacitance Characteristic Measurement Simulation All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
  • 9. BJT Ic-hFE Characteristics Evaluation circuit Q1 QMJ2955 V1 -4 I1 -7 0 Circuit simulation result Simulation All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
  • 10. Comparison Table hFE hFE Ifwd(A) %Error Measurement Simulation -0.1 135 139.077 -3.020 -0.2 125 128.225 -2.580 -0.5 100 103.388 -3.388 -1 75 78.223 -4.297 -2 52 53.028 -1.977 -5 26 27.474 -5.669 -10 15 15.457 -3.047 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
  • 11. BJT Vce(sat) voltage& Vbe(sat) voltage Characteristics Evaluation circuit Q1 QMJ2955 I2 -4 I1 -400m 0 Circuit simulation result Vce(sat) Comparison Table Ic=-4A,Ib=-0.4A Measurement Simulation %Error Vce(sat) (V) -1(max) 0.42118 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
  • 12. BJT Output Characteristic Circuit simulation result All Rights Reserved Copyright (C) Bee Technologies Inc. 2005