SPICE MODEL of US6T7TR in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: TRANSISTOR
PART NUMBER: US6T7TR
MANUFACTURER: ROHM
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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2. TRANSISTOR MODEL
PSpice model
Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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3. Reverse
Reverse Early Voltage Characteristic
Ic
VAR
Vce
Y=aX+b
(X1,Y1)
(X2,Y2)
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4. Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
Emitter Current
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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5. Forward
Forward Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
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5

6. C-B Capacitance Characteristics
Measurement
Simulation
E-B Capacitance Characteristics
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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7. Transistor hFE-IC Characteristics
Circuit Simulation Result
1.0K
100
10
-1.0mA -10A
IC(X_U1.Q_Q1)/ I(U1:3)
IC(X_U1.Q_Q1)
Evaluation Circuit
U1
V1
-2V
US6T7TR
I1
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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8. Comparison Graph
Circuit Simulation Result
Simulation Result
hFE
Ic(A) Error(%)
Measurement Simulation
-0.001 460.000 440.929 -4.146
-0.002 455.000 440.871 -3.105
-0.005 445.000 440.110 -1.099
-0.010 435.000 438.825 0.879
-0.020 425.000 436.466 2.698
-0.050 415.000 429.970 3.607
-0.100 405.000 419.646 3.616
-0.200 390.000 399.343 2.396
-0.500 350.000 337.747 -3.501
-1.000 230.000 227.783 -0.964
-1.500 90.000 85.726 -4.749
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
8

9. VCE(Sat)-IC Characteristics
Circuit Simulation Result
-1.0V
-10mV
-1.0mA -10A
VC(X_U1.Q_Q1)
IC(X_U1.Q_Q1)
Evaluation Circuit
VC
U1
F1
US6T7TR
0Adc F
20
I1
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
9

10. Comparison Graph
Circuit Simulation Result
Simulation Result
VCE(sat)(V)
IC(A) Error(%)
Measurement Simulation
-0.001 -0.0215 -0.0221 2.9721
-0.002 -0.0220 -0.0215 -2.1682
-0.005 -0.0218 -0.0211 -3.2156
-0.010 -0.0215 -0.0213 -0.8791
-0.020 -0.0230 -0.0224 -2.5304
-0.050 -0.0275 -0.0268 -2.6218
-0.100 -0.0360 -0.0347 -3.4806
-0.200 -0.0530 -0.0512 -3.3038
-0.500 -0.1050 -0.1026 -2.3152
-1.000 -0.1900 -0.1954 2.8379
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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11. VBE(Sat)-IC Characteristics
Circuit Simulation Result
-10V
-10mV
-1.0mA -10A
VB(X_U1.Q_Q1)
IC(X_U1.Q_Q1)
Evaluation Circuit
VC
U1
F1
US6T7TR
0Adc F
20
I1
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
11

12. Comparison Graph
Circuit Simulation Result
Simulation Result
VBE(sat)(V)
IC(A) Error(%)
Measurement Simulation
-0.001 -0.580 -0.596 2.678
-0.002 -0.600 -0.614 2.375
-0.005 -0.630 -0.639 1.475
-0.010 -0.660 -0.659 -0.212
-0.020 -0.695 -0.679 -2.336
-0.050 -0.730 -0.708 -2.987
-0.100 -0.760 -0.735 -3.280
-0.200 -0.800 -0.770 -3.702
-0.500 -0.860 -0.846 -1.608
-1.000 -0.920 -0.953 3.618
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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13. Switching Characteristics
Circuit simulation result
8.0V 40V
1 2
7.0V
6.0V 30V
5.0V
4.0V 20V
3.0V
2.0V 10V
1.0V
0V 0V
-1.0V
-2.0V -10V
-3.0V
-4.0V -20V
-5.0V
-6.0V -30V
-7.0V
>>
-8.0V -40V
0s 0.5us 1.5us 2.5us 3.5us 4.5us
1 V(R1:2) 2 V(U1:5)
Time
Evaluation circuit
U1
D1 R2 L2 RL
1 2
R1 L1
225 50nH 25
1 2 D1N5817
D2 R3 VCC
50 30nH
V1 = -6 US6T7TR
V2 = 5 V1 D1N5817 196 -25
TD = 2.5u
TR = 10ns
TF = 10ns
PW = 20us
PER = 50us
0
Simulation result
Measurement Simulation %Error
tf (ns) 42.000 41.154 -2.014
tstg (ns) 176.000 176.141 0.080
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
13

14. Switching Characteristics Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
14

15. Ft - IC Characteristics
Circuit Simulation Result
1.0G
100M
10M
-10m -10
ZeroCross(DB(I(U1:2)))
V_Ic
Evaluation Circuit
H1
+
-
H
0
U2
US6T7TR
Vce
U1 -2Vdc
0
F1 US6T7TR
G1
IC + I1
1m 0 1Aac
-
G 0Adc
Ic F 0
GAIN = 1e6 0 0
0 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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16. Comparison Graph
Circuit Simulation Result
Simulation Result
FT(MHz)
-IC(A) Error(%)
Measurement Simulation
0.010 97.000 99.866 2.955
0.020 155.000 154.858 -0.092
0.050 240.000 232.954 -2.936
0.100 280.000 278.980 -0.364
0.200 305.000 300.867 -1.355
0.500 250.000 241.563 -3.375
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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17. Output Characteristics
Circuit Simulation Result
-1.0A
-3.5mA
-0.9A -3.0mA
-0.8A -2.5mA
-0.7A -2.0mA
-0.6A
-1.5mA
-0.5A
-0.4A -1.0mA
-0.3A
-0.5mA
-0.2A
-0.1A
0A IB=-0A
0V -0.5V -1.0V -1.5V -2.0V -2.5V -3.0V -3.5V -4.0V -4.5V
IC(X_U1.Q_Q1)
V_V1
Evaluation Circuit
U1
V1
-5Vdc
US6T7TR
I1
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
17

18. Output Characteristics Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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