This document summarizes the SPICE model and characterization of a Sanyo 2SC3153 bipolar junction transistor. It includes graphs of key transistor characteristics like forward and reverse early voltage, capacitance, DC beta, saturation voltage, switching times and output characteristics from both simulation and measurement for comparison. Simulation results generally matched measurement data to within 5% error.

1. Device Modeling Report
COMPONENTS: BIPOLAR JUNCTION TRANSISTOR
PART NUMBER: 2SC3153
MANUFACTURER: SANYO
Bee Technologies Inc.
All Rights Reserved Copyright © Bee Technologies Inc. 2004

2. SPICE MODEL
PSpice
model Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright © Bee Technologies Inc. 2004

3. Reverse
Reverse Early Voltage Characteristic
Ic
VAR
Vce
Y=aX+b
(X1,Y1)
(X2,Y2)
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4. Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
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5. Forward
Forward Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
All Rights Reserved Copyright © Bee Technologies Inc. 2004

6. C-B Capacitance Characteristic
E-B Capacitance Characteristic
All Rights Reserved Copyright © Bee Technologies Inc. 2004

7. BJT Ic-hFE Characteristics
Circuit simulation result
Evaluation circuit
Q1 V1
Q2SC3153 5Vdc
I1
0Adc
0
All Rights Reserved Copyright © Bee Technologies Inc. 2004

8. Comparison Graph
Circuit simulation result
Simulation result
hFE
Ic(A) %Error
Measurement Simulation
0.01 15.625 14.878 4.7808
0.02 16.598 16.176 2.542475
0.05 17.73 17.92 1.07163
0.1 18.587 19.08 2.652391
0.2 19.417 19.896 2.46691
0.5 20.161 19.62 2.683399
1 18.215 17.45 4.199835
2 12.92 12.88 0.309598
All Rights Reserved Copyright © Bee Technologies Inc. 2004

9. BJT Vce(sat) voltage & Vbe(sat) voltage Characteristics
Circuit simulation result
Evaluation circuit
I2
Q2
Q2 SC3 15 3 3A dc
I1
0.6 Adc
0
Simulation result
Test condition: IC/IB = 5, IC=3A
Vce(sat)(V) Vbe(sat)(V)
Measurement Simulation Error(%) Measurement Simulation Error(%)
0.28 0.283 1.0714 0.85 0.843 0.8235
All Rights Reserved Copyright © Bee Technologies Inc. 2004

10. Switching Characteristics
Circuit simulation result
Evaluation circuit
R2
V2 = 20 23 .90 54
Q2
V1 = -3 7.6 Q2 SC3 15 3 R1
V3 10 0
R4 R5
TD = 1u
TR = 50 n 50 10 C1 C2
TF = 50 n
10 0u 47 0u
V1
PW = 2 0u V2 40 0V dc
PE R = 20 00 u
5V dc
0
Simulation result
Ts(us) Tf(us)
Measurement Simulation %Error Measurement Simulation
2.05 2.0791 1.4195 0.7[max.] 0.348609
All Rights Reserved Copyright © Bee Technologies Inc. 2004

11. Output Characteristics
Circuit simulation result
From top
IB = 0.2A
0.18A
0.16A
0.14A
0.12A
0.10A
0.08A
0.06A
0.04A
0.02A
Measurement result
All Rights Reserved Copyright © Bee Technologies Inc. 2004

12. Evaluation circuit
V1
Q1 0Vdc
Q2SC3153
I1
0Adc
0
All Rights Reserved Copyright © Bee Technologies Inc. 2004