SPICE MODEL of 2SK2410 (Professional+BDP Model) in SPICE PARK
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SPICE MODEL of 2SK2410 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of 2SK2410 (Professional+BDP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: MOSFET (Professional Model) PART NUMBER: 2SK2410 MANUFACTURER: NEC Corporation REMARK: Body Diode (Professional) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 2. MOSFET MODEL PARAMETERS PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 3. Transconductance Characteristics Circuit Simulation Result 1000 Measurement Simulation TRANSCONDUCTANCE Gfs(s) 100 10 1 1 10 100 DRIAN CURRENT ID (A) Comparison table gfs(s) Id(A) Error(%) Measurement Simulation 1 7.7125 7.8125 1.2966 2 10.8487 10.6952 -1.4148 5 15.9856 15.8730 -0.7043 10 21.2215 21.0970 -0.5867 20 27.8542 27.4725 -1.3701 50 37.6421 37.4251 -0.5764 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 4. Vgs-Id Characteristics Circuit Simulation Result 50A 10A 1.0A 0V 1V 2V 3V 4V 5V 6V 7V 8V 9V 10V I(V2) V_VGS Evaluation circuit V2 U1 2SK2410 VDS 10Vdc VGS 10Vdc 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 5. Comparison Graph Circuit Simulation Result 100 Measurement Simulation ID - Drain Current -A 10 1 0 2 4 6 8 10 VGS - Gate to Source Voltage - V Comparison table gfs(s) Id(A) Measurement Simulation Error(%) 1 2.0500 2.0482 -0.0878 2 2.1500 2.1672 0.8000 5 2.4000 2.4136 0.5667 10 2.7000 2.7074 0.2741 20 3.1500 3.1552 0.1651 50 4.1500 4.1372 -0.3084 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 6. *Rds(on) Characteristic Circuit Simulation result 16A 14A 12A 10A 8A 6A 4A 2A 0A 0V 0.1V 0.2V 0.3V 0.4V 0.5V 0.6V 0.7V 0.8V 0.9V 1.0V I(V2) V_VDD Evaluation circuit V2 U1 2SK2410 VDD 10Vdc VGS 10Vdc 0 0 0 Simulation Result ID=15A, VGS=10V Measurement Simulation Error (%) R DS (on) 31.000 m 30.985 m -0.0484 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 7. Gate Charge Characteristic Circuit Simulation result 16V 14V 12V 10V 8V 6V 4V 2V 0V 0 10n 20n 30n 40n 50n 60n 70n 80n V(W1:3) Time*1mA Evaluation circuit Vsense U1 2SK2410_PRO I1 D1 Dbreak 30Adc W1 + - I2 W VD ION = 0A 48Vdc IOFF = 1.1mA 0 Simulation Result VDD=48V,ID=30A Measurement Simulation Error (%) ,VGS=10V Qgs 4.800 nC 4.770 nC -0.625 Qgd 20.000 nC 20.060 nC 0.300 QG 50.000 nC 49.320 nC -1.360 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 8. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 1 1120.000 1175.000 4.911 2 900.000 922.300 2.478 5 635.000 643.800 1.386 10 480.000 483.000 0.625 20 360.000 358.610 -0.386 50 235.000 240.660 2.409 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 9. Switching Time Characteristic Circuit Simulation result 12V 11V 10V 9V 8V 7V 6V 5V 4V 3V 2V 1V 0V 0.90us 0.95us 1.00us 1.05us 1.10us 1.15us 1.20us V(L3:2) V(3)*0.208 Time Evaluation circuit Vsense RL 3 1.6 U1 2SK2410_PRO V1 = 0 R1 L3 V2 = 20 2 1nH TD = 1u 10 VD 48Vdc TR = 1n V1 R2 TF = 1n 10 PW = 10u PER = 10m 0 Simulation Result ID=15A, VDD=30V Measurement Simulation Error(%) VGS=0/10V ton 22.000 ns 22.261 ns 1.186 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 10. Output Characteristic Circuit Simulation result 100A -10.0V 90A -6.0V 80A 70A 60A VGS=4.0V 50A 40A 30A 20A 10A 0A 0V 2V 4V 6V 8V 10V 12V I(V2) V_VDS Evaluation circuit V2 U1 2SK2410 VDS 10Vdc VGS 10Vdc 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 11. BODY DIODE SPICE MODEL Forward Current Characteristic Circuit Simulation Result 1.0KA 100A 10A 1.0A 0V 0.5V 1.0V 1.5V 2.0V I(V2) V_VDS Evaluation Circuit V2 VGS 0Vdc VDS 0Vdc U1 2SK2410_PRO 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 12. Comparison Graph Circuit Simulation Result 1000 Measurement Simulation Diode Forward Current - A 100 10 1 0 1 2 Source to Drain Voltage - V Simulation Result VDS(V) ISD(A) Measurement Simulation %Error 1 0.7450 0.7404 -0.6174 2 0.7600 0.7616 0.2105 5 0.8000 0.8069 0.8625 10 0.8700 0.8692 -0.0920 20 0.9900 0.9828 -0.7273 50 1.3000 1.3050 0.3846 100 1.8300 1.8284 -0.0874 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 13. Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 7.56us 7.64us 7.72us 7.80us 7.88us 7.96us I(R1) Time Evaluation Circuit R1 50 V1 = -9.3V V2 = 10.7 U1 D2SK2410_PRO TD = 124.7n V1 TR = 10n TF = 10n PW = 7.5us PER = 100us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) trj 32.000 ns 31.999 ns -0.003 trb 88.000 ns 88.120 ns 0.136 trr 120.000 ns 119.395 ns -0.504 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 14. Reverse Recovery Characteristic Reference Trj=32(ns) Trb=88(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 15. ESD PROTECTION DIODE SPICE MODEL Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 10V 20V 30V 40V 50V 60V 70V 80V 90V I(V2) V_VGS Evaluation Circuit U1 V2 2SK2410 ID 0Adc VGS 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006