SPICE MODEL of 2SK2409 (Professional+BDP Model) in SPICE PARK

349 views

Published on

SPICE MODEL of 2SK2409 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

Published in: Technology
0 Comments
0 Likes
Statistics
Notes
  • Be the first to comment

  • Be the first to like this

No Downloads
Views
Total views
349
On SlideShare
0
From Embeds
0
Number of Embeds
29
Actions
Shares
0
Downloads
2
Comments
0
Likes
0
Embeds 0
No embeds

No notes for slide

SPICE MODEL of 2SK2409 (Professional+BDP Model) in SPICE PARK

  1. 1. Device Modeling ReportCOMPONENTS: MOSFET (Professional Model)PART NUMBER: 2SK2409MANUFACTURER: NEC CorporationREMARK: Body Diode (Professional) /ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  2. 2. MOSFET MODEL PARAMETERSPSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  3. 3. Transconductance CharacteristicsCircuit Simulation Result 30 Measurement Simulation 25 Transconductance -Gfs (s) 20 15 10 5 0 0 2 4 6 8 10 12 Drain Curent -Id (A)Comparison table gfs(s) Id(A) Error(%) Measurement Simulation 1.000 7.813 7.874 0.787 2.000 10.811 10.811 0.000 5.000 16.835 16.077 -4.502 10.000 22.222 21.231 -4.459 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  4. 4. Vgs-Id CharacteristicsCircuit Simulation Result 1.0KA 100A 10A 1.0A 100mA 0V 2V 4V 6V 8V 10V I(V2) V_VGSEvaluation circuit V2 U1 2sk2409 VDD VGS 10Vdc 0Vdc 0 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  5. 5. Comparison GraphCircuit Simulation Result 1000 Measurement Simulation 100 Drain Current - ID (A) 10 1 0.1 0 5 10 Gate to Source Voltage - VGS (V)Comparison table VGS(V) ID(A) Error (%) Measurement Simulation 1.000 2.000 1.994 -0.300 2.000 2.080 2.103 1.106 5.000 2.350 2.392 1.787 10.000 2.620 2.601 -0.725 20.000 3.000 3.014 0.467 50.000 3.850 3.935 2.208 100.000 5.180 5.000 -3.475 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  6. 6. *Rds(on) CharacteristicCircuit Simulation result 20A 18A 16A 14A 12A 10A 8A 6A 4A 2A 0A 0V 0.2V 0.4V 0.6V 0.8V 1.0V I(V2) V_VDDEvaluation circuit V2 U1 2sk2409 VDD 10Vdc VGS 10Vdc 0 0 0Simulation Result ID=20A, VGS=10V Measurement Simulation Error (%) R DS (on) 22 m 22.022 m 0.100 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  7. 7. Gate Charge CharacteristicCircuit Simulation result 10V 8V 6V 4V 2V 0V 0s 20us 40us 60us 80us 100us V(W1:3) TimeEvaluation circuit Vsense I1 D1 U1 Dbreak 40Adc 2SK2409 W1 + - I2 W VD ION = 0A 48Vdc IOFF = 1.1mA 0Simulation Result VDD=48V,ID=40A Measurement Simulation Error (%) ,VGS=-10V Qgs 5.00 nC 5.22 nC 4.400 Qgd 25.00 nC 25.00 nC 0.640 Qg 7.30 nC 7.31 nC 0.137 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  8. 8. Capacitance Characteristic Measurement SimulationSimulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 1 1550 1500 0.065 2 1340 1320 0.075 5 1020 1030 0.098 10 770 775 0.130 20 560 550 0.179 50 350 340 0.286 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  9. 9. Switching Time CharacteristicCircuit Simulation result 14V 13V 12V 11V 10V 9V 8V 7V 6V 5V 4V 3V 2V 1V 0V 0.8us 1.0us 1.2us 1.4us 1.6us V(L3:2) I(Vsense)/2 TimeEvaluation circuit Vsense RL 3 1.5 V1 = 0 R1 L3 V2 = 10 2 U1 10 30nH TD = 1u 2sk2409 VD 30.5Vdc TR = 10n V1 TF = 10n PW = 5u PER = 10u 0Simulation Result ID=20A, VDD=30V Measurement Simulation Error(%) VGS=0/10V td(on) 30 ns 30.01 ns 0.063 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  10. 10. Output CharacteristicCircuit Simulation result 100A 10.0V 6.0V 80A 4.0V 60A 40A 20A 0A 0V 2V 4V 6V 8V 10V 12V 14V 16V I(V2) V_VDDEvaluation circuit V2 U1 2sk2409 VDS 10Vdc VGS 10Vdc 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  11. 11. BODY DIODE SPICE MODELForward Current CharacteristicCircuit Simulation Result 1.0KA 100A 10A 1.0A 100mA 0V 1.0V 2.0V 3.0V I(V2) V_VDSEvaluation Circuit V2 VGS 0Vdc VDS 0Vdc U1 2sk2409 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  12. 12. Comparison GraphCircuit Simulation Result 1000 Measurement Simulation ISD-Diode Forward Current - A 100 10 1 0 0 1 2 3 VDS-Source to Drain Voltage-VSimulation Result VDS(V) ISD(A) Measurement Simulation %Error 1.000 0.675 0.675 0.000 2.000 0.705 0.704 -0.142 5.000 0.770 0.758 -1.558 10.000 0.830 0.823 -0.843 20.000 0.940 0.927 -1.383 50.000 1.250 1.202 -3.840 100.000 1.700 1.630 -4.118 170.000 2.300 2.155 -6.304 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  13. 13. Reverse Recovery CharacteristicCircuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 5.5us 5.7us 5.9us 6.1us 6.3us 6.5us I(R1) TimeEvaluation Circuit R1 50 V1 = -9.5V V2 = 10.6 TD = 78n V1 U1 TR = 10n D2SK2409_PRO TF = 10n PW = 5.7u PER = 100us 0Compare Measurement vs. Simulation Measurement Simulation Error (%) trj 57.200 ns 56.710 ns -0.857 trb 152.000 ns 151.360 ns -0.421 trr 209.200 ns 208.070 ns -0.540 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  14. 14. Reverse Recovery Characteristic ReferenceTrj=57.2(ns)Trb=152(ns)Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  15. 15. ESD PROTECTION DIODE SPICE MODELZener Voltage CharacteristicCircuit Simulation Result 1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA 0.1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(V2) V_VGSEvaluation Circuit V2 U1 2SK2409 ID 0Adc VGS 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  16. 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

×