40/28nm ESD approach
On-chip ESD protection clamps for advanced 40nm and 28nm CMOS technology
Despite the rising cost for IC development, EDA tools and mask sets semiconductor design companies continue to use the most advanced CMOS technology for high performance applications because benefits like lower power dissipation, increased gate density, higher speed and lower manufacturing cost per die more than compensate the higher cost.
This return on investment however only pays off for ultra high volume applications. Due to the use of sensitive elements (such as ultra thin-oxide transistors, ultra-shallow junctions, narrow and thin metal layers), increased complexity through multiple voltage domains and the use of IP blocks from various vendors, a comprehensive ESD protection strategy becomes more important.
This white paper presents on-chip ESD protection clamps and approaches for 40/28nm CMOS that provide competitive advantage by improved yield, reduced silicon footprint and enable advanced multimedia and wireless interfaces like HDMI, USB 3.0, SATA, WiFi, GPS and Bluetooth. The solutions are validated in tens of products running in foundry and proprietary fabrication plants.
2019 Local I/O ESD protection for 28Gbps to 112Gbps SerDes interfaces in adva...Sofics
2019 Taiwan ESD and reliability conference
Semiconductor companies are developing ever faster wireless, wired and optical interfaces to satisfy the need for higher data throughputs. They rely on BiCMOS, advanced CMOS and FinFET nodes with ESD-sensitive circuits. However, the parasitic capacitance of the traditional ESD solutions limits the signal frequency. This paper demonstrates small area and low-cap Analog I/Os used in TSMC 28nm CMOS and TSMC 16nm, 12nm, 7nm FinFET technologies for high speed SerDes (28Gbps to 112Gbps) circuits. Parasitic capacitance of the ESD solutions is reduced below 100fF and for some silicon photonics applications even below 20fF.
Design of ESD protection for high-speed interfacesSofics
Semiconductor companies are developing ever faster wireless, wired and optical interfaces to satisfy the need for higher data throughputs. They rely on BiCMOS, advanced CMOS and FinFET nodes with ESD-sensitive circuits. However, the parasitic capacitance of the traditional ESD solutions limits the signal frequency. This paper demonstrates small area and low-cap Analog I/Os used in TSMC 28nm CMOS and TSMC 16nm, 12nm, 7nm FinFET technologies for high speed SerDes (28Gbps to 112Gbps) circuits. Parasitic capacitance of the ESD solutions is reduced below 100fF and for some silicon photonics applications even below 20fF.
2020 04 sofics low cap esd
SHORT-CHANNEL EFFECTS
A MOSFET is considered to be short when the channel length ‘L’ is the same order of magnitude as the depletion-layer widths (xdD, xdS). The potential distribution in the channel now depends upon both, transverse field Ex, due to gate bias and also on the longitudinal field Ey, due to drain bias When the Gate channel length <<1 m, short channel effect becomes important .
This leads to many
undesirable effects in MOSFET.
The short-channel effects are attributed to two physical phenomena:
A) The limitation imposed on electron drift characteristics in the channel,
B) The modification of the threshold voltage due to the shortening channel length.
In particular five different short-channel effects can be distinguished:
1. Drain-induced barrier lowering and “Punch through”
2. Surface scattering
3. Velocity saturation
4. Impact ionization
5. Hot electrons
2019 Local I/O ESD protection for 28Gbps to 112Gbps SerDes interfaces in adva...Sofics
2019 Taiwan ESD and reliability conference
Semiconductor companies are developing ever faster wireless, wired and optical interfaces to satisfy the need for higher data throughputs. They rely on BiCMOS, advanced CMOS and FinFET nodes with ESD-sensitive circuits. However, the parasitic capacitance of the traditional ESD solutions limits the signal frequency. This paper demonstrates small area and low-cap Analog I/Os used in TSMC 28nm CMOS and TSMC 16nm, 12nm, 7nm FinFET technologies for high speed SerDes (28Gbps to 112Gbps) circuits. Parasitic capacitance of the ESD solutions is reduced below 100fF and for some silicon photonics applications even below 20fF.
Design of ESD protection for high-speed interfacesSofics
Semiconductor companies are developing ever faster wireless, wired and optical interfaces to satisfy the need for higher data throughputs. They rely on BiCMOS, advanced CMOS and FinFET nodes with ESD-sensitive circuits. However, the parasitic capacitance of the traditional ESD solutions limits the signal frequency. This paper demonstrates small area and low-cap Analog I/Os used in TSMC 28nm CMOS and TSMC 16nm, 12nm, 7nm FinFET technologies for high speed SerDes (28Gbps to 112Gbps) circuits. Parasitic capacitance of the ESD solutions is reduced below 100fF and for some silicon photonics applications even below 20fF.
2020 04 sofics low cap esd
SHORT-CHANNEL EFFECTS
A MOSFET is considered to be short when the channel length ‘L’ is the same order of magnitude as the depletion-layer widths (xdD, xdS). The potential distribution in the channel now depends upon both, transverse field Ex, due to gate bias and also on the longitudinal field Ey, due to drain bias When the Gate channel length <<1 m, short channel effect becomes important .
This leads to many
undesirable effects in MOSFET.
The short-channel effects are attributed to two physical phenomena:
A) The limitation imposed on electron drift characteristics in the channel,
B) The modification of the threshold voltage due to the shortening channel length.
In particular five different short-channel effects can be distinguished:
1. Drain-induced barrier lowering and “Punch through”
2. Surface scattering
3. Velocity saturation
4. Impact ionization
5. Hot electrons
Low Power VLSI design architecture for EDA (Electronic Design Automation) and Modern Power Estimation, Reduction and Fixing technologies including clock gating and power gating
In this presentation of mine, a basic Design approach of VLSI has been explained. The ppt explains the market level of VLSI and also the fabrication process and also its various applications. An integration of various switches, gates, etc on Ic's has also been showcased in the same.
In semiconductor design, standard-cell methodology is a method of designing application-specific integrated circuits (ASICs) with mostly digital-logic features. Standard-cell methodology is an example of design abstraction, whereby a low-level very-large-scale integration (VLSI) layout is encapsulated into an abstract logic representation (such as a NAND gate).
Cell-based methodology – the general class to which standard cells belong – makes it possible for one designer to focus on the high-level (logical function) aspect of digital design, while another designer focuses on the implementation (physical) aspect. Along with semiconductor manufacturing advances, standard-cell methodology has helped designers scale ASICs from comparatively simple single-function ICs (of several thousand gates), to complex multi-million gate system-on-a-chip (SoC) devices.
On-chip ESD protection for Silicon PhotonicsSofics
In the past, Fiber-optic communication was used only for long distance communication (50 km and beyond). Only a limited number of these high-end interface products were required worldwide. More recently, companies running large data centers (Facebook, Google, Amazon,...) like to replace the traditional cabling between server racks. The copper-based approach is considered a bottleneck for further improvements in data transfer capacity. Optical fiber can dramatically increase the bandwidth between servers and reduce complexity.
Thus, the optical interconnect suppliers now need to produce a large number of their products. To reduce the cost, they separate the optical parts (laser diodes, photo detectors) from the digital controller circuits. That allows to rely on advanced, standard CMOS technology for those controller circuits, enabling a cost-effective high-volume production. Both elements are combined within a single IC package using advanced packing techniques.
The 25-56Gbps interfaces consist of SerDes-type circuits and are integrated into advanced CMOS technology like 28nm CMOS. To create such high-speed differential I/O circuits, designers utilize the thin oxide transistors. However, those transistors are very sensitive and can be easily damaged during transient events like electrostatic discharge (ESD).
Despite the fact that the sensitive pads are not connected outside of the package, they could still receive ESD stress during assembly. Therefore, adequate protection clamps need to be inserted at the bond pads. On the other hand, for signal integrity, it is important to limit the capacitance between the interface pads and the supply lines.
Sofics has worked with several companies developing these optical interconnect interfaces. Sofics developed ESD protection with parasitic capacitance below 15fF, ten times lower than the typical low-cap ESD protection devices in TSMC 28nm CMOS.
Technological Trends in the Field of Circuit Board Design and ManufacturingToradex
Circuit boards are extensively used across in the electronics industry. So much so that nowadays a circuit board designer is expected to be also proficient in the manufacturing technology apart from understanding electrical engineering. Read this article which will provide you with an insight on the various current and emerging technological trends prevailing in the manufacture of printed circuit boards.
Low Power VLSI design architecture for EDA (Electronic Design Automation) and Modern Power Estimation, Reduction and Fixing technologies including clock gating and power gating
In this presentation of mine, a basic Design approach of VLSI has been explained. The ppt explains the market level of VLSI and also the fabrication process and also its various applications. An integration of various switches, gates, etc on Ic's has also been showcased in the same.
In semiconductor design, standard-cell methodology is a method of designing application-specific integrated circuits (ASICs) with mostly digital-logic features. Standard-cell methodology is an example of design abstraction, whereby a low-level very-large-scale integration (VLSI) layout is encapsulated into an abstract logic representation (such as a NAND gate).
Cell-based methodology – the general class to which standard cells belong – makes it possible for one designer to focus on the high-level (logical function) aspect of digital design, while another designer focuses on the implementation (physical) aspect. Along with semiconductor manufacturing advances, standard-cell methodology has helped designers scale ASICs from comparatively simple single-function ICs (of several thousand gates), to complex multi-million gate system-on-a-chip (SoC) devices.
On-chip ESD protection for Silicon PhotonicsSofics
In the past, Fiber-optic communication was used only for long distance communication (50 km and beyond). Only a limited number of these high-end interface products were required worldwide. More recently, companies running large data centers (Facebook, Google, Amazon,...) like to replace the traditional cabling between server racks. The copper-based approach is considered a bottleneck for further improvements in data transfer capacity. Optical fiber can dramatically increase the bandwidth between servers and reduce complexity.
Thus, the optical interconnect suppliers now need to produce a large number of their products. To reduce the cost, they separate the optical parts (laser diodes, photo detectors) from the digital controller circuits. That allows to rely on advanced, standard CMOS technology for those controller circuits, enabling a cost-effective high-volume production. Both elements are combined within a single IC package using advanced packing techniques.
The 25-56Gbps interfaces consist of SerDes-type circuits and are integrated into advanced CMOS technology like 28nm CMOS. To create such high-speed differential I/O circuits, designers utilize the thin oxide transistors. However, those transistors are very sensitive and can be easily damaged during transient events like electrostatic discharge (ESD).
Despite the fact that the sensitive pads are not connected outside of the package, they could still receive ESD stress during assembly. Therefore, adequate protection clamps need to be inserted at the bond pads. On the other hand, for signal integrity, it is important to limit the capacitance between the interface pads and the supply lines.
Sofics has worked with several companies developing these optical interconnect interfaces. Sofics developed ESD protection with parasitic capacitance below 15fF, ten times lower than the typical low-cap ESD protection devices in TSMC 28nm CMOS.
Technological Trends in the Field of Circuit Board Design and ManufacturingToradex
Circuit boards are extensively used across in the electronics industry. So much so that nowadays a circuit board designer is expected to be also proficient in the manufacturing technology apart from understanding electrical engineering. Read this article which will provide you with an insight on the various current and emerging technological trends prevailing in the manufacture of printed circuit boards.
2011 Latch-up immune ESD Protection Clamp for High Voltage optimized on TSMC ...Sofics
2011 TSMC open innovation Platform
Applications like motor control, power management and conversion, LCD panel drivers and automotive systems require IC interfaces that can tolerate and drive high voltages (10V to 100V). Moreover, in most of these applications the ICs are operated in harsh environments (high temperature, high current/voltage transient disturbance), close to the boundaries of the IC technology. Further, to reduce the Bill of Materials (BOM) system makers are constantly shifting requirements that were once a system/PCB issue to the IC makers. IC makers designing high voltage applications need robust and reliable technology that can meet a growing set of requirements.
Based on TSMC’s comprehensive BCD technology platform in 0.25um and 0.18um, Sofics has developed novel EOS/ESD protection devices that can solve those needs.
This paper first presents an overview of the EOS, ESD, latch-up and other requirements that IC makers face today. Secondly the TSMC BCD technology that was used as the verification platform is touched upon. Finally analysis results and on-going product implementations are shown on 0.25um BCD and 0.18um BCD technology. The unique BCD ESD solutions are available for TSMC foundry customers at a fraction of the development cost.
On chip esd protection for Internet of ThingsSofics
Many of the applications in Internet of Things require non-standard on-chip ESD protection clamps. We identified 5 reasons.
- Non-standard signal voltages
- Low leakage requirement
- Sub-systems are powered down
- Wireless interfaces
- System level protection, on the chip
Clearly, IC designers need to think about the ESD protection strategy for their IoT system. It is wise to rely on silicon proven concepts to speed up market introduction.
2010 The Hebistor Device: Novel latch-up immune ESD Protection Clamp for High...Sofics
2010 Taiwan ESD and reliability conference
High voltage interfaces are broadly used in many IC applications like motor control, power management and conversion, LCD panel drivers and automotive systems. Because the high voltage IC's are typically used in severe applications IC designers need to protect their circuits to a steady growing list of requirements. In this paper we present an overview of the ESD, EOS and latch‐up requirements and compare the performance of different on‐chip ESD protection approaches. The paper introduces a newly developed protection device with a high holding voltage for absolute latch‐up immunity.
Ever since the beginning of the microelectronics era there has been an eternal quest to reduce the characteristic features on the devices: some devices are now in qualification states on the sub 40nm gate oxide range for an scheduled commercial release towards the end of the year, and there are a lot of efforts in the sub 30nm range.
On-Chip ESD Protection Achieving 8kV HBM Without Compromising the 3.4Gbps HDM...Sofics
To maintain signal integrity on HDMI TMDS interfaces ESD protection requires careful design. Moreover, due to direct consumer interaction higher ESD specifications are requested. This paper presents results for an HDMI circuit achieving 8kV HBM without compromising the 3.4Gbps data rate through the use of low capacitive on‐chip ESD clamps.
Nowadays, mobile consumer electronics devices integrate various wireless interfaces like WIFI, Bluetooth, GPRS and GPS. Various approaches exist to protect the wireless interfaces against ESD stress. In recent years, researchers have focused on so‐called 'co‐design' techniques to solve both functional and protection constraints together which requires both RF and ESD design skills. However many IC designers still prefer to work with 'plug‐n‐play' protection concepts where the ESD clamps exhibit low parasitic capacitance, low series resistance and low leakage. This paper presents measurement results of 3 different SCR based protection approaches that exhibit high Q‐factor and low and stable parasitic capacitance over a broad voltage and frequency range. The clamps are used for protection of LNA circuits in 90nm and 40nm Low Power (LP) CMOS technologies.
1. White paper 40/28nm ESD approach
On-
-chip ESD protection clamps for advanced
40nm and 28nm CMOS technology
Despite the rising cost for IC development, EDA tools and mask sets
semiconductor design companies continue to use the most advanced
CMOS technology for high performance applications because benefits like
lower power dissipation, increased gate density, higher speed and lower
manufacturing cost per die more than compensate the higher cost.
This return on investment however only pays off for ultra high volume
applications. Due to the use of sensitive elements (such as ultra thin
thin-oxide
transistors, ultra shallow junctions, narrow and thin metal layers),
ultra-shallow
increased complexity through multiple voltage domains and the use of IP
blocks from various vendors, a comprehensive ESD protection strategy
becomes more important.
This white paper presents on chip ESD protection clamps and approaches
on-chip
for 40/28nm CMOS that provide competitive advantage by improved yield,
competitive
reduced silicon footprint and enable advanced multimedia and wireless
interfa
interfaces like HDMI, USB 3.0, SATA, WiFi, GPS and Bluetooth. The
,
solutions are validated in tens of products running in foundry and
proprietary fabricatio plants.
fabrication