Diodes and its application encapsulate the different characteristics of different type of diodes. Also, define its different biases and how it works.
It provides shortcut method in analyzing Clamper and clipper.
At the end of the powerpoint, there has a review question to answer with answer key provided.
The study of the basics of electronics can be studied through the link http://bit.ly/2PPv0mv
The transistor is a semiconductor device with three connections, capable of amplification in addition to rectification
Diodes and its application encapsulate the different characteristics of different type of diodes. Also, define its different biases and how it works.
It provides shortcut method in analyzing Clamper and clipper.
At the end of the powerpoint, there has a review question to answer with answer key provided.
The study of the basics of electronics can be studied through the link http://bit.ly/2PPv0mv
The transistor is a semiconductor device with three connections, capable of amplification in addition to rectification
BJT Input and Output Characteristics in Common-Base ConfigurationSelf employed
A- Introduction B.J.T
B- Position of the terminals and symbol of B.J.T
C- Common-Base Configuration
D- Circuit Arrangement For Input and Output Characteristic Curve in CB Configuration
E- Transistor Characteristics in Common-Base Configuration
EST 130, Transistor Biasing and Amplification.CKSunith1
The attached narrated power point presentation explains the need for biasing in transistor amplifiers and the different biasing arrangements used in transistor circuits. The material will be useful for KTU first year B Tech students who prepare for the subject EST 130, Part B, Basic Electronics Engineering.
Original Uni-junction transistor or UJT is a simple device in which a bar of N-type semiconductor material into which P-type material is diffused; somewhere along its length defining the device parameter as intrinsic standoff. The 2N2646 is the most commonly used version of UJT.
Derive the thermal-equilibrium concentrations of electrons and holes in a semiconductor as a function of the Fermi energy level.
Discuss the process by which the properties of a semiconductor material can be favorably altered by adding specific impurity atoms to the semiconductor.
Determine the thermal-equilibrium concentrations of electrons and holes in a semiconductor as a function of the concentration of dopant atoms added to the semiconductor.
Determine the position of the Fermi energy level as a function of the concentrations of dopant atoms added to the semiconductor.
ENT201-Electronic DevicesLecture No. 10Unit-1 *Quantitative Theory of the PN-Diode Currents- Diode Current Equation.
Milliman's Electronic Devices and Circuits
BJT Input and Output Characteristics in Common-Base ConfigurationSelf employed
A- Introduction B.J.T
B- Position of the terminals and symbol of B.J.T
C- Common-Base Configuration
D- Circuit Arrangement For Input and Output Characteristic Curve in CB Configuration
E- Transistor Characteristics in Common-Base Configuration
EST 130, Transistor Biasing and Amplification.CKSunith1
The attached narrated power point presentation explains the need for biasing in transistor amplifiers and the different biasing arrangements used in transistor circuits. The material will be useful for KTU first year B Tech students who prepare for the subject EST 130, Part B, Basic Electronics Engineering.
Original Uni-junction transistor or UJT is a simple device in which a bar of N-type semiconductor material into which P-type material is diffused; somewhere along its length defining the device parameter as intrinsic standoff. The 2N2646 is the most commonly used version of UJT.
Derive the thermal-equilibrium concentrations of electrons and holes in a semiconductor as a function of the Fermi energy level.
Discuss the process by which the properties of a semiconductor material can be favorably altered by adding specific impurity atoms to the semiconductor.
Determine the thermal-equilibrium concentrations of electrons and holes in a semiconductor as a function of the concentration of dopant atoms added to the semiconductor.
Determine the position of the Fermi energy level as a function of the concentrations of dopant atoms added to the semiconductor.
ENT201-Electronic DevicesLecture No. 10Unit-1 *Quantitative Theory of the PN-Diode Currents- Diode Current Equation.
Milliman's Electronic Devices and Circuits
What is electronics?
Electronics is the science of how to control electric energy, which the electrons have a fundamental role.
This presentation gives a brief explanation about what is electronics and each of the part of the electronic components.
A Bipolar Junction Transistor is a three-terminal semiconductor device consisting of two p-n junctions which are able to amplify or magnify a signal. It is a current controlled device. The three terminals of the BJT are the base, the collector and the emitter. A BJT is a type of transistor that uses both electrons and holes as charge carriers
THIS ANALOG ELECTRONICS CIRCUIT PPT COVER ALL PORTION OF THIS SUBJECT.MODULE 1 DC ANALYSIS OF BJT AND FET ,D.C LOAD LINE,STABILIZATION TECHNIQUE
MODULE-2 AC ANALYSIS OF BJT
MODULE-3 OPERATIONAL AMPLIFIER,FEEDBACK TOPOLOGY,OSCILLATOR
THIS PPT i.e Analog Electronic Circuit (AEC) covered all the module i.e all the portion of this subject,module 1 all biasing technique of BJT And FET D.C. Analysis,stabilization technique,
Module 2 Ac analysis
Module 3 Operational Amplifier (OPAMP),Oscillator,Feedback concept
edcThe valence band is simply the outermost electron orbital of an atom of any specific material that electrons actually occupy
The conduction band is the band of electron orbitals that electrons can jump up into from the valence band when excited. When the electrons are in these orbitals, they have enough energy to move freely in the material
The energy difference between the highest occupied energy state of the valence band and the lowest unoccupied state of the conduction band is called the band gap
We have compiled the most important slides from each speaker's presentation. This year’s compilation, available for free, captures the key insights and contributions shared during the DfMAy 2024 conference.
CW RADAR, FMCW RADAR, FMCW ALTIMETER, AND THEIR PARAMETERSveerababupersonal22
It consists of cw radar and fmcw radar ,range measurement,if amplifier and fmcw altimeterThe CW radar operates using continuous wave transmission, while the FMCW radar employs frequency-modulated continuous wave technology. Range measurement is a crucial aspect of radar systems, providing information about the distance to a target. The IF amplifier plays a key role in signal processing, amplifying intermediate frequency signals for further analysis. The FMCW altimeter utilizes frequency-modulated continuous wave technology to accurately measure altitude above a reference point.
Harnessing WebAssembly for Real-time Stateless Streaming PipelinesChristina Lin
Traditionally, dealing with real-time data pipelines has involved significant overhead, even for straightforward tasks like data transformation or masking. However, in this talk, we’ll venture into the dynamic realm of WebAssembly (WASM) and discover how it can revolutionize the creation of stateless streaming pipelines within a Kafka (Redpanda) broker. These pipelines are adept at managing low-latency, high-data-volume scenarios.
Welcome to WIPAC Monthly the magazine brought to you by the LinkedIn Group Water Industry Process Automation & Control.
In this month's edition, along with this month's industry news to celebrate the 13 years since the group was created we have articles including
A case study of the used of Advanced Process Control at the Wastewater Treatment works at Lleida in Spain
A look back on an article on smart wastewater networks in order to see how the industry has measured up in the interim around the adoption of Digital Transformation in the Water Industry.
6th International Conference on Machine Learning & Applications (CMLA 2024)ClaraZara1
6th International Conference on Machine Learning & Applications (CMLA 2024) will provide an excellent international forum for sharing knowledge and results in theory, methodology and applications of on Machine Learning & Applications.
Sachpazis:Terzaghi Bearing Capacity Estimation in simple terms with Calculati...Dr.Costas Sachpazis
Terzaghi's soil bearing capacity theory, developed by Karl Terzaghi, is a fundamental principle in geotechnical engineering used to determine the bearing capacity of shallow foundations. This theory provides a method to calculate the ultimate bearing capacity of soil, which is the maximum load per unit area that the soil can support without undergoing shear failure. The Calculation HTML Code included.
HEAP SORT ILLUSTRATED WITH HEAPIFY, BUILD HEAP FOR DYNAMIC ARRAYS.
Heap sort is a comparison-based sorting technique based on Binary Heap data structure. It is similar to the selection sort where we first find the minimum element and place the minimum element at the beginning. Repeat the same process for the remaining elements.
Hierarchical Digital Twin of a Naval Power SystemKerry Sado
A hierarchical digital twin of a Naval DC power system has been developed and experimentally verified. Similar to other state-of-the-art digital twins, this technology creates a digital replica of the physical system executed in real-time or faster, which can modify hardware controls. However, its advantage stems from distributing computational efforts by utilizing a hierarchical structure composed of lower-level digital twin blocks and a higher-level system digital twin. Each digital twin block is associated with a physical subsystem of the hardware and communicates with a singular system digital twin, which creates a system-level response. By extracting information from each level of the hierarchy, power system controls of the hardware were reconfigured autonomously. This hierarchical digital twin development offers several advantages over other digital twins, particularly in the field of naval power systems. The hierarchical structure allows for greater computational efficiency and scalability while the ability to autonomously reconfigure hardware controls offers increased flexibility and responsiveness. The hierarchical decomposition and models utilized were well aligned with the physical twin, as indicated by the maximum deviations between the developed digital twin hierarchy and the hardware.
The Internet of Things (IoT) is a revolutionary concept that connects everyday objects and devices to the internet, enabling them to communicate, collect, and exchange data. Imagine a world where your refrigerator notifies you when you’re running low on groceries, or streetlights adjust their brightness based on traffic patterns – that’s the power of IoT. In essence, IoT transforms ordinary objects into smart, interconnected devices, creating a network of endless possibilities.
Here is a blog on the role of electrical and electronics engineers in IOT. Let's dig in!!!!
For more such content visit: https://nttftrg.com/
Student information management system project report ii.pdfKamal Acharya
Our project explains about the student management. This project mainly explains the various actions related to student details. This project shows some ease in adding, editing and deleting the student details. It also provides a less time consuming process for viewing, adding, editing and deleting the marks of the students.
Understanding Inductive Bias in Machine LearningSUTEJAS
This presentation explores the concept of inductive bias in machine learning. It explains how algorithms come with built-in assumptions and preferences that guide the learning process. You'll learn about the different types of inductive bias and how they can impact the performance and generalizability of machine learning models.
The presentation also covers the positive and negative aspects of inductive bias, along with strategies for mitigating potential drawbacks. We'll explore examples of how bias manifests in algorithms like neural networks and decision trees.
By understanding inductive bias, you can gain valuable insights into how machine learning models work and make informed decisions when building and deploying them.
What are and how are PNP NPN Transistor materials are made ?
1. 2008 Junction Transistor Unit 4 Lesson 1- " , Raj Kamal, 1
Transistor and their
Characteristics –
Lesson-1 Junction Transistor
2. 2008 Junction Transistor Unit 4 Lesson 1- " , Raj Kamal, 2
1.1. Junction TransistorJunction Transistor
DefinitionDefinition
The transferred-resistance or transistor
is a multi-junction device that is capable
of
• Current gain
• Voltage gain
• Signal-power gain
3. 2008 Junction Transistor Unit 4 Lesson 1- " , Raj Kamal, 3
Bipolar junction transistorBipolar junction transistor
Invented in 1948 by Bardeen, Brattain and
Shockley
Contains three adjoining, alternately doped
semiconductor regions: Emitter (E), Base (B), and
Collector (C)
The middle region, base, is very thin compared
to the diffusion length of minority carriers
Two kinds: npn and pnp
4. 2008
Junction Transistor Unit 4 Lesson 1-
" , Raj Kamal,
4
Bipolar junction transistor – BJT
Definition
The Bipolar junction transistor is an active
device that works as a voltage-controlled
current source and whose basic action is
control of current at one terminal by
controlling voltage applied at other two
terminals.
6. 2008 Junction Transistor Unit 4 Lesson 1- " , Raj Kamal, 6
2.2. Transistor CurrentTransistor Current
ComponentsComponents
7. 2008 Junction Transistor Unit 4 Lesson 1- " , Raj Kamal, 7
BJT circuit Current ComponentsBJT circuit Current Components
As shown, the currents are positive quantities when the
transistor is operated in forward active mode.
IE = IB + IC and VEB + VBC + VCE = 0 VCE = VEC
8. 2008 Junction Transistor Unit 4 Lesson 1- " , Raj Kamal, 8
Meaning of Forward biasingMeaning of Forward biasing
When the p side is applied +ve and n side
negative in a junction and applied voltage is
grater than a threshold 0.65 V for Silicon
(Si)
9. 2008 Junction Transistor Unit 4 Lesson 1- " , Raj Kamal, 9
Meaning of Reverse biasingMeaning of Reverse biasing
When the p side is applied -ve and n side
+ve in a junction and applied voltage is
between 0 to a breakdown voltage
10. 2008 Junction Transistor Unit 4 Lesson 1- " , Raj Kamal, 10
3.3. Transistor as AmplifierTransistor as Amplifier
11. 2008 Junction Transistor Unit 4 Lesson 1- " , Raj Kamal, 11
BJT CommonBJT Common
BaseBase
configurationconfiguration
BJT CommonBJT Common
EmitterEmitter
configurationconfiguration
BJT CommonBJT Common
CollectorCollector
configurationconfiguration
PNPPNP PNP
IB
IE IC
Three configurations
12. 2008
Junction Transistor Unit 4 Lesson 1-
" , Raj Kamal,
12
Six Problems
• Draw circuits of CB, CE, CC
configurations for npn and pnp transistors
• Show current directions
13. 2008
Junction Transistor Unit 4 Lesson 1-
" , Raj Kamal,
13
npn transistor in
a simple circuit, known as
‘common-emitter’
amplifier
14. 2008 Junction Transistor Unit 4 Lesson 1- " , Raj Kamal, 14
Characteristics ofCharacteristics of Transistor Amplifier in threeTransistor Amplifier in three
regions of operationsregions of operations
15. 2008 Junction Transistor Unit 4 Lesson 1- " , Raj Kamal, 15
Input or driving PointInput or driving Point
Characteristics of CommonCharacteristics of Common
Base transistor AmplifierBase transistor Amplifier
Input or driving Point
Characteristics of Common
Emitter transistor
Amplifier
Active region
Saturation region Saturation region
Active region
16. 2008 Junction Transistor Unit 4 Lesson 1- " , Raj Kamal, 16
Output CollectorOutput Collector
Characteristics of CommonCharacteristics of Common
Base transistor AmplifierBase transistor Amplifier
Output CollectorOutput Collector
Characteristics of CommonCharacteristics of Common
Emitter transistorEmitter transistor
AmplifierAmplifier
Saturation region Cut-off region Cut-off regionSaturation region
Active region Active region
17. 2008 Junction Transistor Unit 4 Lesson 1- " , Raj Kamal, 17
First Approximation RelationshipFirst Approximation Relationship
betweenbetween IICC andand IIEE
IC IE
BJT CommonBJT Common
BaseBase
configurationconfiguration
18. 2008
Junction Transistor Unit 4 Lesson 1-
" , Raj Kamal,
18
The collector current is being controlled by the B-E voltage, or
the current in the one part of the device is being controlled by
the voltage in another part - transistor action
Since the B-E junction is forward biased, holes from the base
are injected into the emitter. However, these injected holes
do not contribute to the collector current and are therefore
not part of the transistor action
To design a useful device, we need mathematical expressions
for the minority carrier concentrations shown in the figure
above.
There are three modes of operation we must consider
• Forward-active (B-E FB, B-C RB)
• Cut-off (B-E RB, B-C RB)
• Saturation (B-E FB, B-C FB)
20. 2008 Junction Transistor Unit 4 Lesson 1- " , Raj Kamal, 20
In the cut-off region, the base emitter and
collector base junctions of transistor are
reverse biased IC IE 0
CutCut--off defined as region of characteristics Ioff defined as region of characteristics ICC = 0= 0
21. 2008 Junction Transistor Unit 4 Lesson 1- " , Raj Kamal, 21
Saturation- region – defined as region of
characteristics left of VCB = 0 and IC increase
exponentially with VCB increases toward 0
In the saturation region region, the base
emitter and collector base junctions of
transistor are forward biased
22. 2008 Junction Transistor Unit 4 Lesson 1- " , Raj Kamal, 22
Active - region – defined as region of
characteristics right of VCB = 0 and IC first
increases exponentially with VCB increases
toward 0.7 V in Si transistor and then
becomes constant
In the active region region, the base emitter and
collector base junctions of transistor are forward
and reversed biased respectively IC IE ≠ 0
and is in mA IC
23. 2008 Junction Transistor Unit 4 Lesson 1- " , Raj Kamal, 23
Operation in the forward-active
mode
B-E junction is forward biased so
electrons
can be injected from the emitter to the
base, B-C
junction is reverse biased.
25. 2008
Junction Transistor Unit 4 Lesson 1-
" , Raj Kamal,
25
BJT structure - three regions, two p-n junctions, three
terminals (emitter, base, collector)
Thin
Thin
26. 2008 Junction Transistor Unit 4 Lesson 1- " , Raj Kamal, 26
ConstructionConstruction
Devices can be p-n-p, or n-p-n structures
Width of the base is small compared to the
minority carrier length and is about 1/150 of
total width, number of free carriers are
small as doping level is 1/10 th or less
compared to collector)
Emitter is normally heavily doped, the
collector has light doping
27. 2008 Junction Transistor Unit 4 Lesson 1- " , Raj Kamal, 27
SummarySummary
We learnt
(i) pnp transistor
(ii) npn transistor
(iii) Current Components
(iv) Three configurations-
Common base, common emitter
and Common collector
28. 2008 Junction Transistor Unit 4 Lesson 1- " , Raj Kamal, 28
We learnt
(v) Three regions- cut-off,
saturation and active
(vi) Transistor construction