SPICE MODEL of TPCA8016-H (Professional+BDSP Model) in SPICE PARK

Device Modeling Report

COMPONENTS: Power MOSFET (Professional)
PART NUMBER: TPCA8016-H
MANUFACTURER: TOSHIBA
Body Diode (Special) / ESD Protection Diode

Bee Technologies Inc.

All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

-1-

MOSFET MODEL

PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility


-2-

Transconductance Characteristic
Circuit Simulation Result

100
Measurement
Simulation
TRANSCONDUCTANCE GFS(s)

10

1
0 1 2 3 4 5
DRIAN CURRENT ID (A)

Comparison table

gfs
Id(A) Error (%)
Measurement Simulation
0.2 4.4440 4.54545 2.2830
0.5 7.0420 7.14286 1.4322
1 10.0000 10.00000 0.0000
2 13.3330 13.88889 4.1693
5 22.2220 21.18644 -4.6601


-3-

Vgs-Id Characteristic

Circuit Simulation result

50A

40A

30A

20A

10A

0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V 7.0V 8.0V
I(V3)
V_VGS

Evaluation circuit

U1 TPCA8016-H
0Vdc V3

VDS

VGS
10Vdc

0Vdc

0


-4-

Comparison Graph


60
Measurement
Simulation
Drain Current ID (A)

40

20

0
0 2 4 6
Gate - Source Voltage VGS (V)

Simulation Result

VGS(V)
ID(A) Error (%)
1 2.600 2.575 -0.977
2 2.700 2.660 -1.481
5 2.890 2.834 -1.945
10 3.050 3.037 -0.439
20 3.350 3.336 -0.418
30 3.550 3.576 0.724
40 3.780 3.785 0.119
50 3.980 3.974 -0.163


-5-

Rds(on) Characteristic


13.0A

10.4A

7.8A

5.2A

2.6A

0A
0V 100mV 200mV 300mV 400mV 500mV
I(V3)
V_VDS

Evaluation circuit

U1 TPCA8016-H
0Vdc V3

VDS

VGS
0Vdc

10Vdc

0

Simulation Result

ID=13A, VGS=10V Measurement Simulation Error (%)
R DS (on) 20.00 m 20.00 m 0.000


-6-

Gate Charge Characteristic
15V

10V

5V

0V
0 10n 20n 30n
V(W1:3)
Time*1mA

Evaluation circuit

U1 TPCA8016-H
Vsense

I1
W1 D1
+ Dbreak 25Adc
-
I2
TD = 0 W
ION = 0A
IOFF = 1mA
VD
48Vdc

0

Simulation Result

VDD=48V,ID=25A
Measurement Simulation Error (%)
VGS=10V
Qgs 4.600 nC 4.5907 nC -0.202
Qgd 4.200 nC 4.2045 nC 0.107
Qg 22.000 nC 21.932 nC -0.309


-7-

Capacitance Characteristic

Measurement
Simulation

Simulation Result

Cbd(pF)
VDS(V) Measurement Simulation Error(%)
0.1 910.000 905.000 -0.549
0.2 900.000 899.000 -0.111
0.5 770.000 765.000 -0.649
1 660.000 657.000 -0.455
2 510.000 505.000 -0.980
5 360.000 355.000 -1.389
10 271.000 269.000 -0.738
20 198.000 195.000 -1.515
50 132.000 135.000 2.273


-8-

Switching Time Characteristic


14V

12V

10V

8V

6V

4V

2V

0V

-2V
0.96us 0.98us 1.00us 1.02us 1.04us 1.06us
V(3)*0.33 V(2)
Time

Evaluation circuit

U1 TPCA8016-H
R2 L3 Vsense RL
2 3

2.3
4.7
V1 = 0
V2 = 20
TD = 1u V1 R1
TR = 10n
TF = 10n 4.7 VD
PER = 10m 30Vdc
PW = 10u

0

Simulation Result

ID= 25A, VDD=48V
Measurement Simulation Error(%)
VGS=0/10V
ton 10.000 ns 9.944 ns -0.560


-9-

Output Characteristic


50A

10V 4.0V
45A
8V
40A
5V 3.8V
35A
6V
30A 4.5V

25A 3.5 V

20A

15A 3.3V

10A
VGS= 3V
5A

0A
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V 5.0V
I(V3)
V_VDS
Evaluation circuit

U1 TPCA8016-H
0Vdc V3

VDS

VGS
0Vdc

10Vdc

0


- 10 -

Forward Current Characteristic


100A

10A

1.0A

100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V
I(R1)
V_V1

Evaluation Circuit

R1

0.01m

U1
DTPCA8016-H_SP

V1

0Vdc

0


- 11 -

Comparison Graph


100
Measurement
Simulation
Drain reverse Current - IDR (A)

10

1

0.1
0 0.2 0.4 0.6 0.8 1
Drain - Source Voltage VDS (V)

Simulation Result

VSD(V)
IDR(A) %Error
0.1 0.5800 0.5821 0.3621
0.2 0.6100 0.6093 -0.1148
0.5 0.6500 0.6452 -0.7385
1 0.6750 0.6732 -0.2667
2 0.7020 0.7024 0.0570
5 0.7450 0.7450 0.0000
10 0.7850 0.7836 -0.1783
20 0.8300 0.8340 0.4819
30 0.8750 0.8733 -0.1943


- 12 -

Reverse Recovery Characteristics (Body Diode)


2.0A

1.5A

1.0A

0.5A

0A

-0.5A

-1.0A

-1.5A

-2.0A
1.86us 1.88us 1.90us 1.92us 1.94us 1.96us 1.98us 2.00us 2.02us 2.04us
I(R1)
Time

Evaluation Circuit

R1 2 Vsense

V1 = -19V PARAMETERS:
TF = 1.2u
V2 = 60V

TD = 6.873n

TR = 10ns
U2
TF = {TF} V1 DTPCA8016-H_SP
VPULSE
PW = 1us

PER = 20us

0

Compare Measurement vs. Simulation

Measurement Simulation Error (%)
trr 33.2 ns 33.531 ns 0.997


- 13 -

Reverse Recovery Characteristic (Body Diode) Reference

Trr=33.2ns
Conditions:Ifwd=di/dt=30A/us


- 14 -

Zener Voltage Characteristic

10mA

9mA

8mA

7mA

6mA

5mA

4mA

3mA

2mA

1mA

0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1

Evaluation Circuit

R1

0.01m
openopenopenopen
open

U1
V1
0Vdc TPCA8016-H Ropen
100MEG

0

0


- 15 -

Zener Voltage Characteristic Reference


- 16 -

SPICE MODEL of TPCA8016-H (Professional+BDSP Model) in SPICE PARK

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