The document discusses light emitting diodes (LEDs). It begins by stating the objectives of learning about LED design principles, relating semiconductor properties to the LED principle, and selecting appropriate materials for different LED types. It then provides background on LEDs, noting they are semiconductor p-n junctions that emit light through electroluminescence when forward biased. The document outlines key topics that will be covered including device configuration, materials requirements, selection, and issues. It poses questions for the reader on topics like LED construction, materials selection issues, band gap engineering, and examples of materials that emit different wavelengths of light. References and materials that will be provided are also listed.

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2.  Objectives
 What is LED?
 4 Main Issues
 By the end of this lecture you must be able to …
 For the LED lectures you need:
 Construction of Typical LED
 Injection Luminescence in LED
 LED Construction
 References

3. OBJECTIVES:
To learn the basic design principles of LED
To relate properties of semiconductor material to the
principle of LED
To be able select appropriate materials for different types of
LED
To be able to apply knowledge of band gap engineering to
design appropriate materials for a particular LED
 To acknowledge other materials that can and have been
used in LED

4. LED are semiconductor p-n junctions that under forward bias conditions can emit
radiation by electroluminescence in the UV, visible or infrared regions of the
electromagnetic spectrum. The qaunta of light energy released is approximately
proportional to the band gap of the semiconductor.

5. H.J. Round, Electrical World, 49, 309, 1907
On applying a potential to
a crystal of carborundum
(SiC), the material gave
out a yellowish light

6. 1. The device configuration
2. Materials requirements
3. Materials selection
4. Material issues

7.  Draw a typical construction of an LED.
 Explain your drawing.
 State all the issues regarding the materials
selection of an LED.
 State all of the possible answers regarding your
materials issues.
 Explain band gap engineering
 Explain the isoelectronic doping in GaAsP system
 State examples of materials that emit, UV, Vis, IR
lights

8. 1. Complete set of notes (3 lecture presentation and
lecture notes)
2. A photocopy from Kasap (p.139-150)
3. A photocopy from Wilson (p-141-155)
4. Some reading materials

11. Advantages of Light Emitting Diodes (LEDs)
Longevity:
The light emitting element in a diode is a small
conductor chip rather than a filament which greatly
extends the diode’s life in comparison to an
incandescent bulb (10 000 hours life time compared
to ~1000 hours for incandescence light bulb)
Efficiency:
Diodes emit almost no heat and run at very low
amperes.
Greater Light Intensity:
Since each diode emits its own light
Cost:
Not too bad
Robustness:
Solid state component, not as fragile as
incandescence light bulb

12. LED chip is the part
that we shall deal
with in this course

13.  Luminescence is a term used to describe the
emission of radiation from a solid when the
solid is supplied with some form of energy.
 Electroluminescence  excitation results from
the application of an electric field
 In a p-n junction diode injection
electroluminescence occurs resulting in light
emission when the junction is forward biased

14. P-n junction Electrical
Contacts
A typical LED needs a p-n junction
Junction is biased to produce even more
e-h and to inject electrons from n to p for
recombination to happen
There are a lot of electrons and holes at
the junction due to excitations
Electrons from n need to be injected to p
to promote recombination
Recombination
produces light!!

15.  Under forward bias – majority carriers from both sides of the junction
can cross the depletion region and entering the material at the other
side.
 Upon entering, the majority carriers become minority carriers
 For example, electrons in n-type (majority carriers) enter the p-type
to become minority carriers
 The minority carriers will be larger  minority carrier injection
 Minority carriers will diffuse and recombine with the majority carrier.
 For example, the electrons as minority carriers in the p-region will
recombine with the holes. Holes are the majority carrier in the p-
region.
 The recombination causes light to be emitted
 Such process is termed radiative recombination.

16. eVo
Eg
p n+
h =Eg
Eg
p n+
(a) (b)
Electrons in CB
Holes in VB
EC
EV
EF
◘Ideal LED will have all injection electrons to take part in the recombination process
◘In real device not all electron will recombine with holes to radiate light
◘Sometimes recombination occurs but no light is being emitted (non-radiative)
◘Efficiency of the device therefore can be described
◘Efficiency is the rate of photon emission over the rate of supply electrons

17. ◘ The number of radiative recombination is proportional to the carrier injection rate
◘ Carrier injection rate is related to the current flowing in the junction
◘ If the transition take place between states (conduction and valance bands) the
emission wavelength, g = hc/(EC-EV)
◘ EC-EV = Eg
◘ g = hc/Eg

18. If GaAs has Eg = 1.43ev
What is the wavelength, g it emits?
What colour corresponds to the wavelength?

19. Substrate
n
Al
SiO2
Electrical
contacts
p
Light output

20.  Efficient light emitter is also an efficient absorbers of
radiation therefore, a shallow p-n junction required.
 Active materials (n and p) will be grown on a lattice
matched substrate.
 The p-n junction will be forward biased with contacts
made by metallisation to the upper and lower surfaces.
 Ought to leave the upper part ‘clear’ so photon can
escape.
 The silica provides passivation/device isolation and
carrier confinement

21.  Need a p-n junction (preferably the same
semiconductor material only different dopants)
 Recombination must occur  Radiative
transmission to give out the ‘right coloured LED’
 ‘Right coloured LED’  hc/ = Ec-Ev = Eg
 so choose material with the right Eg
 Direct band gap semiconductors to allow efficient
recombination
 All photons created must be able to leave the
semiconductor
 Little or no reabsorption of photons

22. Correct band gap Direct band gap
Material can be
made p and n-type
Efficient radiative
pathways must exist

23. Direct band gap
materials
e.g. GaAs not Si
 UV-ED  ~0.5-400nm
Eg > 3.25eV
 LED -  ~450-650nm
Eg = 3.1eV to 1.6eV
 IR-ED-  ~750nm- 1nm
Eg = 1.65eV
Readily doped n or p-typesMaterials with refractive
index that could allow light
to ‘get out’

24. Describe the principles of operation of an
LED and state the material’s requirements
criteria to produce an efficient LED.
(50 marks)

25. www.google.com
www.wikipedia.com
www.studymafia.org
www.pptplanet.com
www.pdfclass.com