This document contains a SPICE model and test results for a Shindengen S3K60 general purpose rectifier diode. It includes: 1) The SPICE model parameters for the diode. 2) Graphs comparing simulated and measured forward voltage, capacitance, and reverse recovery characteristics. 3) The simulations match the measurements well, with most errors under 3%.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: S3K60
MANUFACTURER: SHINDENGEN
Device Modeling Report
Bee Technologies Inc.

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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SPICE MODEL
*$
* PART NUMBER: S3K60
* MANUFACTURER: SHINDENGEN
* VRRM=600,IO=3A
* All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
.MODEL DS3K60 D
+ IS=220.18E-6
+ N=4.7950
+ RS=18.724E-3
+ IKF=3.2507
+ CJO=116.42E-12
+ M=.37144
+ VJ=.3905
+ ISR=0
+ BV=600
+ IBV=10.000E-6
+ TT=75.96E-9
*$

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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DIODE MODEL PARAMETERS
PSpice model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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D1
DS3K60
R1
0.01m
V1
0Vdc
0
V_V1
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V
I(R1)
100mA
1.0A
10A
100A
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Comparison Graph
Circuit Simulation Result
Simulation Result
Ifwd (A)
Vfwd (V)
%Error
Measurement Simulation
0.1 0.780 0.763 -2.21
0.2 0.845 0.852 0.83
0.5 0.960 0.977 1.77
1 1.058 1.082 2.27
2 1.204 1.205 0.08
5 1.421 1.426 0.32
10 1.670 1.668 -0.12
20 2.040 2.019 -1.03
50 2.834 2.806 -1.00

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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D1
DS3K60
V2
0Vdc
V1
TD = 0
TF = 50ns
PW = 5us
PER = 10us
V1 = 0
TR = 1u
V2 = 600V
0
V(N11503)
1.0V 10V 100V
I(V2)/(600V/1u)
10p
100p
Capacitance Characteristic
Circuit Simulation Result
Evaluation Circuit

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Comparison Graph
Circuit Simulation Result
Simulation Result
Vrev (V)
Cj (pF)
%Error
Measurement Simulation
1 72.500 72.978 0.66
2 60.000 59.755 -0.41
5 43.400 44.261 1.98
10 34.200 34.808 1.78
20 26.700 27.174 1.78
50 18.900 19.497 3.16
100 15.600 15.200 -2.56

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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0
V1TD = 6ns
TF = 1ns
PW = 20us
PER = 50us
V1 = -9.1V
TR = 10ns
V2 = 10.8V
R1
50
D1
DS3K60
Time
19.92us 20.00us 20.08us 20.16us 20.24us 20.32us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj ns 29.60 29.11 -1.64

9. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Reverse Recovery Characteristic Reference
Trj =29.60(ns)
Trb= 68.80(ns)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50
Relation between trj and trb
Example
Measurement