This document summarizes the key parameters and SPICE model of the 1SS400 general purpose rectifier diode from manufacturer ROHM. It includes: 1) The diode's components, part number, manufacturer, and SPICE model parameters. 2) Graphs comparing the diode's simulated and measured forward voltage, capacitance, and reverse recovery characteristics. 3) The simulation results show good agreement with measurements, validating the accuracy of the SPICE model.

1. Device Modeling Report
COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: 1SS400
MANUFACTURER: ROHM
Bee Technologies Inc.
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2. SPICE MODEL
*$
* P ART NUMBER: 1SS400
* M ANUF ACTURER: ROHM
* VRM=80,IO=100m
* All Rights Reserved Copyright ( C) Bee Technologies Inc. 2008
.MODEL D1SS400 D
+ IS=6.5141E-9
+ N=1.9171
+ RS=1.0000E- 6
+ IKF=12.751E-3
+ CJO=541.55E-15
+ M=.10579
+ VJ=9.9900
+ ISR=0
+ BV=100
+ IBV=100.00E-12
+ TT=10.293E-9
*$
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3. DIODE MODEL PARAMETERS
PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
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4. Forward Current Characteristic
Circuit Simulation Result
100mA
10mA
1.0mA
100uA
10uA
0V 0.1V 0.3V 0.5V 0.7V 0.9V 1.1V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc D1
D1SS400
0
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5. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd (V)
Ifwd (A) %Error
Measurement Simulation
0.00001 0.362 0.364 -0.55
0.00002 0.397 0.398 -0.25
0.00005 0.441 0.443 -0.45
0.0001 0.482 0.478 0.83
0.0002 0.515 0.513 0.39
0.0005 0.561 0.559 0.36
0.001 0.597 0.594 0.50
0.002 0.628 0.630 -0.32
0.005 0.680 0.681 -0.15
0.01 0.721 0.725 -0.55
0.02 0.777 0.776 0.13
0.05 0.861 0.857 0.46
0.1 0.921 0.923 -0.22
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6. Capacitance Characteristic
Circuit Simulation Result
10p
1.0p
100f
2V 5V 10V 15V
I(V2)/(80V/1u)
V(N11503)
Evaluation Circuit
V2
0Vdc
V1 = 0 V1
V2 = 80V D1
TD = 0 D1SS400
TR = 1u
TF = 50ns
PW = 5us
PER = 10us
0
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7. Comparison Graph
Circuit Simulation Result
Simulation Result
Cj (pF)
Vrev (V) %Error
Measurement Simulation
2 0.532 0.531 -0.19
3 0.527 0.527 0.00
4 0.522 0.523 0.17
5 0.518 0.519 0.19
10 0.503 0.503 0.00
15 0.492 0.491 -0.20
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8. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
19.98us 20.00us 20.02us 20.04us 20.06us 20.08us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.1V
V2 = 11V
TD = 12ns V1
TR = 10ns D1
TF = 15ns D1SS400
PER = 50us
PW = 20us
0
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj ns 7.40 7.70 4.04
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9. Reverse Recovery Characteristic Reference
Measurement
Trj =7.40(ns)
Trb= 3.20 (ns)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50
Example
Relation between trj and trb
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