This document provides a SPICE model for the 1SS187 general purpose rectifier diode manufactured by Toshiba. It includes: - The SPICE model parameters for the diode. - Descriptions of each SPICE model parameter. - Graphs comparing the simulated and measured forward current, capacitance, and reverse recovery characteristics of the diode to validate the accuracy of the SPICE model.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: 1SS187
MANUFACTURER: TOSHIBA
Device Modeling Report
Bee Technologies Inc.

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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SPICE MODEL
*$
* PART NUMBER: 1SS187
* MANUFACTURER: TOSHIBA
* All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
.MODEL D1SS187 D
+ IS=9.1074E-9
+ N=2.0022
+ RS=1.0000E-6
+ IKF=29.311E-3
+ CJO=2.2105E-12
+ M=.21891
+ VJ=.42919
+ ISR=0
+ BV=80
+ IBV=500.00E-9
+ TT=10.237E-9
*$

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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DIODE MODEL PARAMETERS
PSpice model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

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V_V1
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
10uA
100uA
1.0mA
10mA
100mA
1.0A
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
V1
0Vdc
R1
0.01m
0
D1
1SS187

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0.00001
0.0001
0.001
0.01
0.1
0 0.2 0.4 0.6 0.8 1 1.2
ForwardcurrentIF(A)
Forward voltage VF (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
Ifwd (A)
Vfwd (V)
%Error
Measurement Simulation
0.00001 0.372 0.362 -2.57
0.00002 0.403 0.398 -1.15
0.00005 0.442 0.446 0.84
0.0001 0.476 0.482 1.21
0.0002 0.510 0.518 1.51
0.0005 0.563 0.565 0.36
0.001 0.596 0.602 0.97
0.002 0.637 0.639 0.25
0.005 0.693 0.689 -0.62
0.01 0.735 0.729 -0.82
0.02 0.780 0.773 -0.90
0.05 0.848 0.844 -0.52
0.1 0.900 0.907 0.77

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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V(N11360)
1.0V 10V300mV 50V
I(V2)/(80V/1u)
0
1.0p
2.0p
2.5p
Capacitance Characteristic
Circuit Simulation Result
Evaluation Circuit
0
V1
TD = 0
TF = 10ns
PW = 20us
PER = 10us
V1 = 0
TR = 1us
V2 = 80
V2
0Vdc
D1
1SS187

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0
0.5
1
1.5
2
2.5
0.3 3 30
JunctioncapacitanceCt(pF)
Reverse Voltage VR (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
Vrev (V)
Ct (pF)
%Error
Measurement Simulation
0.3 1.967 1.969 0.08
0.5 1.868 1.867 -0.07
1 1.697 1.699 0.11
2 1.518 1.513 -0.36
5 1.271 1.269 -0.19
10 1.089 1.100 0.99
20 0.945 0.949 0.42
50 0.787 0.779 -1.05

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Time
19.99us 20.01us 20.03us 20.05us 20.07us 20.09us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj ns 7.00 6.97 -0.43
V1
TD = 22ns
TF = 8ns
PW = 20us
PER = 50us
V1 = -9.1V
TR = 5ns
V2 = 11.1V
R1
50
0
D1
1SS187

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Reverse Recovery Characteristic Reference
Measurement
Trj =7.0(ns)
Trb= 2.4(ns)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50
Relation between trj and trb
Example

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