1SS370 LTspice Model (Free SPICE Model)

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: 1SS370
MANUFACTURER: TOSHIBA
Device Modeling Report
Bee Technologies Inc.

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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SPICE MODEL
*$
* PART NUMBER: 1SS370
* MANUFACTURER: TOSHIBA
* All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
.MODEL 1SS370 D
+ IS=115.88E-12
+ N=1.3559
+ RS=.40671
+ IKF=2.4079E-3
+ CJO=1.4183E-12
+ M=.12932
+ VJ=.4103
+ BV=200
+ IBV=100.00E-9
+ TT=40.945E-9
+ ISR=0
*$

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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DIODE MODEL PARAMETERS
PSpice model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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V_V1
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V
I(R1)
10uA
100uA
1.0mA
10mA
100mA
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
V1
0Vdc
R1
0.01m
0
D1
1SS370

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Comparison Graph
Circuit Simulation Result
Simulation Result
Ifwd (A)
Vfwd (V)
%Error
Measurement Simulation
0.00001 0.401 0.398 -0.75
0.00002 0.423 0.422 -0.24
0.00005 0.452 0.455 0.66
0.0001 0.482 0.480 -0.41
0.0002 0.500 0.504 0.80
0.0005 0.538 0.539 0.19
0.001 0.572 0.567 -0.87
0.002 0.602 0.599 -0.50
0.005 0.653 0.650 -0.459
0.01 0.695 0.696 0.144
0.02 0.745 0.7470 0.27
0.05 0.825 0.8230 -0.24
0.1 0.893 0.8920 -0.112

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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V(N11360)
1.0V 10V 100V300mV
I(V2)/(200V/1u)
1.0p
0.2p
1.6p
Capacitance Characteristic
Circuit Simulation Result
Evaluation Circuit
0
V1
TD = 0
TF = 10ns
PW = 20us
PER = 10us
V1 = 0
TR = 1us
V2 = 200
V2
0Vdc
D1
1SS370

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Comparison Graph
Circuit Simulation Result
Simulation Result
Vrev (V)
Ct (pF)
%Error
Measurement Simulation
0.3 1.325 1.321 -0.30
0.5 1.278 1.278 0.00
1 1.202 1.210 0.67
2 1.127 1.127 0.00
5 1.021 1.015 -0.59
10 0.935 0.933 -0.21
20 0.858 0.856 -0.23
50 0.763 0.760 -0.39
100 0.694 0.696 0.29

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Time
19.88us 19.96us 20.04us 20.12us 20.20us 20.28us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj ns 27.20 27.04 -0.58
V1
TD = 15ns
TF = 10ns
PW = 20us
PER = 50us
V1 = -9.4V
TR = 15ns
V2 = 11V
R1
50
0
D1
1SS370

9. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Reverse Recovery Characteristic Reference
Trj =27.2(ns)
Trb= 29.6(ns)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50
Relation between trj and trb
Example
Measurement