This document provides a SPICE model and characterization data for the CMH08 general purpose rectifier diode manufactured by Toshiba. It includes: - The SPICE model parameters for the diode. - Descriptions of the SPICE model parameters. - Graphs comparing the diode's simulated and measured forward voltage, capacitance, and reverse recovery characteristics. - The simulated reverse recovery time is within 0.4ns of the measured value.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: CMH08
MANUFACTURER: TOSHIBA
Device Modeling Report
Bee Technologies Inc.

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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SPICE MODEL
*$
* PART NUMBER: CMH08
* MANUFACTURER: TOSHIBA
* All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
.MODEL CMH08 D
+ IS=7.9696E-9
+ N=2.2558
+ RS=47.560E-3
+ IKF=.3713
+ CJO=43.038E-12
+ M=.43077
+ VJ=.3905
+ ISR=100.00E-12
+ BV=400
+ IBV=10.000E-6
+ ISR=0
+ TT=25.000E-9
*$

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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DIODE MODEL PARAMETERS
PSpice model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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V_V1
0.4V 0.8V 1.2V 1.6V 2.0V 2.4V
I(R1)
10mA
100mA
1.0A
10A
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
V1
0Vdc
R1
0.01m
0
D1
CMH08

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Comparison Graph
Circuit Simulation Result
Simulation Result
Ifwd (A)
Vfwd (V)
%Error
Measurement Simulation
0.1 0.970 0.957 -1.34
0.5 1.100 1.087 -1.18
1 1.200 1.183 -1.42
2 1.300 1.282 -1.38
5 1.510 1.488 -1.46
10 1.810 1.789 -1.16

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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V(N11360)
1.0V 10V 30V
I(V2)/(400V/1u)
1.0p
10p
100p
Capacitance Characteristic
Circuit Simulation Result
Evaluation Circuit
0
V1
TD = 0
TF = 10ns
PW = 20us
PER = 10us
V1 = 0
TR = 1us
V2 = 400
V2
0Vdc
D2
CMH08

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Comparison Graph
Circuit Simulation Result
Simulation Result
Vrev (V)
Cj (pF)
%Error
Measurement Simulation
1 25.000 24.930 -0.28
2 19.500 19.706 1.06
5 14.000 13.902 -0.70
10 10.500 10.469 -0.30
15 9.000 8.833 -1.86
20 7.750 7.826 0.98
30 6.500 6.598 1.51

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Time
19.88us 19.96us 20.04us 20.12us 20.20us 20.28us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj ns 13.60 13.55 -0.37
V1
TD = 40ns
TF = 6ns
PW = 20us
PER = 50us
V1 = -9.1V
TR = 5ns
V2 = 11V
R1
50
0
D1
CMH08

9. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Reverse Recovery Characteristic Reference
Trj =13.6(ns)
Trb= 13.6(ns)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50
Relation between trj and trb
Example