D5LC20U PSpice Model (Free SPICE Model)

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: DIODE/ GENERAL PURPOSE
RECTIFIER/ STANDARD MODEL
PART NUMBER: D5LC20U
MANUFACTURER: SHINDENGEN

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
2
D1
D5LC20U
SPICE MODEL
Circuit Configuration
*$
* PART NUMBER: D5LC20U
* MANUFACTURER: SHINDENGEN
* VRRM=200V, IF=5A
* All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
.MODEL D5LC20U D
+ IS=3.1856E-9
+ N=1.3728
+ RS=16.062E-3
+ IKF=.12611
+ CJO=171.20E-12
+ M=.4391
+ VJ=.64132
+ ISR=0
+ BV=210
+ IBV=10e-6
+ TT=12.356E-9
*$

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
3
DIODE MODEL PARAMETERS
PSpice
model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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V_V1
0.5V 0.6V 0.7V 0.8V 0.9V 1.0V
I(R1)
10mA
100mA
1.0A
10A
R1
0.01m
V1
0
D1
D5LC20U
Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
5
0.01
0.1
1
10
0.5 0.6 0.7 0.8 0.9 1
ForwordCurrent,IF(A)
Forward Voltage, VF (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation result
Comparison table
IF (A)
VF (V)
%Error
Measurement Simulation
0.01 0.533 0.532 -0.19
0.02 0.558 0.558 0.00
0.05 0.596 0.595 -0.17
0.1 0.629 0.628 -0.16
0.2 0.667 0.666 -0.15
0.5 0.729 0.729 0.00
1 0.784 0.784 0.00
2 0.850 0.849 -0.12

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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0
R
V1TD = 0
TF = 50ns
PW = 5us
PER = 10us
V1 = 0
TR = 1us
V2 = 200
V2
0
D1
D5LC20
V(R)
20V 40V 60V 80V 100V0V
I(V2)/(200V/1us)
0
20p
40p
60p
80p
100p
120p
140p
160p
180p
200p
Junction Capacitance Characteristic
Circuit Simulation result
Evaluation circuit

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0
20
40
60
80
100
120
140
160
180
200
0 20 40 60 80 100
Capacitance,C(pF)
Reverse Voltage, VR (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation result
Comparison table
VR (V)
C (pF)
%Error
Measurement Simulation
0.1 161.080 160.800 -0.17
0.2 152.000 152.000 0.00
0.5 132.450 133.033 0.44
1 113.360 113.404 0.04
2 91.239 92.000 0.83
5 67.456 66.000 -2.16
10 50.000 50.000 0.00
20 37.106 37.246 0.38
50 24.760 25.120 1.45
100 18.178 18.600 2.32

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Time
19.94us 19.98us 20.02us 20.06us 20.10us 20.14us
I(D1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
0
V1
TD = 0
TF = 10n
PW = 20u
PER = 50u
V1 = -9.4V
TR = 10n
V2 = 10.7V
R1
50
D1
D5LC20U
Reverse Recovery Characteristics
Circuit Simulation result
Evaluation circuit
Comparison Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj ns 8.8 8.81 0.11

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Reverse Recovery Characteristics Reference
Trj = 8.8(ns)
Trb = 16.4(ns)
Conditions: Ifwd = lrev = 0.2(A), Rl = 50
Relation between trj and trb
Example
Measurement