This document provides a SPICE model for the D25XB80 diode manufactured by Shindengen. It includes parameters for the diode model as well as simulation results and comparisons with measurement data for the forward current characteristics, junction capacitance, and reverse recovery characteristics. The simulations match the measurement data closely with errors generally less than 1%.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: DIODE/ GENERAL PURPOSE
RECTIFIER/ STANDARD MODEL
PART NUMBER: D25XB80
MANUFACTURER: SHINDENGEN

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
2
D1
D25XB80
SPICE MODEL
Circuit Configuration
*$
* PART NUMBER: D25XB80
* MANUFACTURER: SHINDENGEN
* VRRM=800V, IF=25A
* All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
.MODEL D25XB80 D
+ IS=7.7410E-12
+ N=1.1885
+ RS=19.037E-3
+ IKF=374.02
+ EG=3
+ CJO=281.01E-12
+ M=.31015
+ VJ=.44082
+ ISR=0
+ BV=840
+ IBV=10.000E-6
+ TT=25.314E-6
*$

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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DIODE MODEL PARAMETERS
PSpice
model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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V_V1
0.6V 0.8V 1.0V 1.2V0.5V
I(D1)
100mA
1.0A
10A
R1
0.01m
V1
0
D1
D25XB80
Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

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5
0.1
1
10
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
ForwordCurrent,IF(A)
Forward Voltage, VF (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation result
Comparison table
IF (A)
VF (V)
%Error
Measurement Simulation
0.1 0.714 0.717 0.42
0.2 0.742 0.740 -0.27
0.5 0.778 0.774 -0.51
1 0.809 0.805 -0.49
2 0.844 0.845 0.12
5 0.926 0.931 0.54
10 1.050 1.048 -0.19

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6
0
R
V1
TD = 0
TF = 100ns
PW = 100us
PER = 10m
V1 = 0
TR = 1us
V2 = 800
V2
0
D1
D25XB80
V(R)
100mV 1.0V 10V 100V
I(V2)/(600V/1u)
0
50p
100p
150p
200p
250p
300p
Junction Capacitance Characteristic
Circuit Simulation result
Evaluation circuit

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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0
50
100
150
200
250
300
0.1 1 10 100
Capacitance,C(pF)
Reverse Voltage, VR (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation result
Comparison table
VR (V)
C (pF)
%Error
Measurement Simulation
0.1 263.927 265.014 0.41
0.2 250.708 251.000 0.12
0.5 220.989 222.567 0.71
1 194.193 195.000 0.42
2 165.617 165.284 -0.20
5 129.540 128.900 -0.49
10 106.023 105.380 -0.61
20 85.895 85.600 -0.34
50 64.212 64.700 0.76
100 51.030 52.141 2.18

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Time
20us 24us 28us 32us 36us 40us 44us 48us 52us 56us17us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
0
V1TD = 0ns
TF = 10ns
PW = 20us
PER = 100us
V1 = -9.23V
TR = 10ns
V2 = 10.7V
R1
50
D1
D25XB80
Reverse Recovery Characteristics
Circuit Simulation result
Evaluation circuit
Comparison Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj us 10.80 10.75 -0.46

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Reverse Recovery Characteristics Reference
trj=10.80 (us)
trb=4.88(us)
Conditions:Ifwd=Irev=0.2(A),Rl=50
Relation between trj and trb
Example