This document contains a device modeling report for the Toshiba CLH02 diode, detailing its SPICE model parameters such as saturation current, series resistance, and junction capacitance. Additionally, it includes simulation results for forward current characteristics, capacitance, and reverse recovery characteristics, comparing experimental measurements with simulation results and presenting % errors. The report highlights key performance metrics and characteristics pertinent to the diode's operation.

1. Device Modeling Report
COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: CLH02
MANUFACTURER: TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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2. SPICE MODEL
*$
* P ART NUMBER: CLH02
* M ANUF ACTURER: TOSHIB A
* All Rights Reserved Copyright ( C) Bee Technologies Inc. 2008
.MODEL DCLH02 D
+ IS=2.9403E-9
+ N=2.1516
+ RS=23.584E- 3
+ IKF=.9514
+ CJO=31.079E-12
+ M=.73484
+ VJ=9.9900
+ ISR=0
+ BV=100
+ IBV=100.00E-6
+ TT=22.162E-9
*$
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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3. DIODE MODEL PARAMETERS
PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
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4. Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
10mA
0V 0.4V 0.8V 1.2V 1.6V 2.0V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc D1
DCLH02
0
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5. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd (V)
Ifwd (A) %Error
Measurement Simulation
0.1 0.976 0.963 -1.29
0.2 1.012 1.006 -0.56
0.5 1.080 1.070 -0.90
1 1.140 1.129 -0.93
2 1.230 1.205 -2.07
5 1.390 1.346 -3.17
10 1.570 1.515 -3.53
20 1.87 1.7976 -3.87
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6. Capacitance Characteristic
Circuit Simulation Result
100p
10p
1.0p
5.0V 10V 30V
I(V2)/(300V/1u)
V(N11503)
Evaluation Circuit
V2
0Vdc
V1 = 0 V1
V2 = 300 D1
TD = 0 DCLH02
TR = 1u
TF = 50ns
PW = 5us
PER = 10us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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7. Comparison Graph
Circuit Simulation Result
Simulation Result
Cj (pF)
Vrev (V) %Error
Measurement Simulation
5 23.000 23.041 0.18
10 18.800 18.657 -0.76
20 13.800 13.867 0.49
30 11.200 11.213 0.12
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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8. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
19.94us 19.98us 20.02us 20.06us 20.10us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.0V
V2 = 11
TD = 15ns V1
TR = 1ns D1
TF = 10ns DCLH02
PER = 50us
PW = 20us
0
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj ns 12.00 11.80 -1.67
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9. Reverse Recovery Characteristic Reference
Measurement
Trj =12.00(ns)
Trb= 9.60(ns)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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