This document provides a SPICE model for the 1SS187 general purpose rectifier diode manufactured by Toshiba. It includes: - The SPICE model parameters for the diode. - Graphs comparing the simulated and measured forward voltage and capacitance characteristics. - Simulation results showing less than 1% error compared to measurements for reverse recovery time.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: 1SS187
MANUFACTURER: TOSHIBA
Device Modeling Report
Bee Technologies Inc.

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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SPICE MODEL
*$
* PART NUMBER: 1SS187
* MANUFACTURER: TOSHIBA
* All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
.MODEL D1SS187 D
+ IS=9.1074E-9
+ N=2.0022
+ RS=1.0000E-6
+ IKF=29.311E-3
+ CJO=2.2105E-12
+ M=.21891
+ VJ=.42919
+ ISR=0
+ BV=80
+ IBV=500.00E-9
+ TT=10.237E-9
*$

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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DIODE MODEL PARAMETERS
PSpice model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

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V_V1
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
10uA
100uA
1.0mA
10mA
100mA
1.0A
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
V1
0Vdc
R1
0.01m
0
D1
1SS187

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0.00001
0.0001
0.001
0.01
0.1
0 0.2 0.4 0.6 0.8 1 1.2
ForwardcurrentIF(A)
Forward voltage VF (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
Ifwd (A)
Vfwd (V)
%Error
Measurement Simulation
0.00001 0.372 0.362 -2.57
0.00002 0.403 0.398 -1.15
0.00005 0.442 0.446 0.84
0.0001 0.476 0.482 1.21
0.0002 0.510 0.518 1.51
0.0005 0.563 0.565 0.36
0.001 0.596 0.602 0.97
0.002 0.637 0.639 0.25
0.005 0.693 0.689 -0.62
0.01 0.735 0.729 -0.82
0.02 0.780 0.773 -0.90
0.05 0.848 0.844 -0.52
0.1 0.900 0.907 0.77

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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V(N11360)
1.0V 10V300mV 50V
I(V2)/(80V/1u)
0
1.0p
2.0p
2.5p
Capacitance Characteristic
Circuit Simulation Result
Evaluation Circuit
0
V1
TD = 0
TF = 10ns
PW = 20us
PER = 10us
V1 = 0
TR = 1us
V2 = 80
V2
0Vdc
D1
1SS187

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0
0.5
1
1.5
2
2.5
0.3 3 30
JunctioncapacitanceCt(pF)
Reverse Voltage VR (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
Vrev (V)
Ct (pF)
%Error
Measurement Simulation
0.3 1.967 1.969 0.08
0.5 1.868 1.867 -0.07
1 1.697 1.699 0.11
2 1.518 1.513 -0.36
5 1.271 1.269 -0.19
10 1.089 1.100 0.99
20 0.945 0.949 0.42
50 0.787 0.779 -1.05

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Time
19.99us 20.01us 20.03us 20.05us 20.07us 20.09us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj ns 7.00 6.97 -0.43
V1
TD = 22ns
TF = 8ns
PW = 20us
PER = 50us
V1 = -9.1V
TR = 5ns
V2 = 11.1V
R1
50
0
D1
1SS187

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Reverse Recovery Characteristic Reference
Measurement
Trj =7.0(ns)
Trb= 2.4(ns)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50
Relation between trj and trb
Example

10. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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