This document summarizes the SPICE model parameters and simulation results for the CMH07 general purpose rectifier diode manufactured by Toshiba. It includes: 1) The SPICE model parameters for the diode. 2) Forward current vs voltage characteristics from circuit simulation and comparison to measurements. 3) Capacitance vs reverse voltage characteristics from simulation and comparison to measurements. 4) Reverse recovery characteristics from simulation and comparison to measurements.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: CMH07
MANUFACTURER: TOSHIBA
Device Modeling Report
Bee Technologies Inc.

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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SPICE MODEL
*$
* PART NUMBER: CMH07
* MANUFACTURER: TOSHIBA
* All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
.MODEL DCMH07 D
+ IS=19.753E-12
+ N=1.2706
+ RS=14.827E-3
+ IKF=52.844E-3
+ CJO=59.093E-12
+ M=.38078
+ VJ=.3905
+ ISR =0
+ BV=200
+ IBV=10.000E-6
+ TT=19.508E-9
*$

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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DIODE MODEL PARAMETERS
PSpice model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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V_V1
0V 0.4V 0.8V 1.2V 1.6V
I(R1)
10mA
100mA
1.0A
10A
100A
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
R1
0.01m
V1
0Vdc
0
D2
DCMH07

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Comparison Graph
Circuit Simulation Result
Simulation Result
Ifwd (A)
Vfwd (V)
%Error
Measurement Simulation
0.01 0.661 0.662 0.11
0.02 0.687 0.688 0.11
0.05 0.728 0.727 -0.12
0.1 0.768 0.763 -0.60
0.2 0.805 0.806 0.09
0.5 0.867 0.869 0.21
1 0.918 0.921 0.38
2 0.983 0.982 -0.12
5 1.092 1.087 -0.49
10 1.202 1.206 0.36
20 1.401 1.400 -0.05

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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V(N11503)
1.0V 10V 30V
I(V2)/(200V/1u)
1.0p
10p
100p
Capacitance Characteristic
Circuit Simulation Result
Evaluation Circuit
D1
DCMH07
V2
0Vdc
V1
TD = 0
TF = 50ns
PW = 5us
PER = 10us
V1 = 0
TR = 1u
V2 = 200
0

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Comparison Graph
Circuit Simulation Result
Simulation Result
Vrev (V)
Cj (pF)
%Error
Measurement Simulation
1 36.700 36.446 -0.69
2 29.300 29.637 1.15
5 21.700 21.745 0.21
10 16.800 16.937 0.82
20 13.200 13.095 -0.80
30 11.500 11.261 -2.08

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Time
19.94us 19.98us 20.02us 20.06us 20.10us 20.14us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj ns 13.20 12.792 -3.09
0
V1TD = 8ns
TF = 9ns
PW = 20us
PER = 50us
V1 = -9.3V
TR = 10ns
V2 = 10.8V
R1
50
D2
DCMH07

9. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Reverse Recovery Characteristic Reference
Trj =13.20(ns)
Trb= 7.60 (ns)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50
Relation between trj and trb
Example
Measurement