This document provides a SPICE model and characterization data for the CMH08 general purpose rectifier diode manufactured by Toshiba. It includes: 1) The SPICE model parameters for the diode. 2) Graphs comparing the diode's simulated and measured forward voltage, capacitance, and reverse recovery characteristics. 3) The simulation circuits used to generate the characterization data.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: CMH08
MANUFACTURER: TOSHIBA
Device Modeling Report
Bee Technologies Inc.

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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SPICE MODEL
*$
* PART NUMBER: CMH08
* MANUFACTURER: TOSHIBA
* All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
.MODEL CMH08 D
+ IS=7.9696E-9
+ N=2.2558
+ RS=47.560E-3
+ IKF=.3713
+ CJO=43.038E-12
+ M=.43077
+ VJ=.3905
+ ISR=100.00E-12
+ BV=400
+ IBV=10.000E-6
+ ISR=0
+ TT=25.000E-9
*$

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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DIODE MODEL PARAMETERS
PSpice model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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V_V1
0.4V 0.8V 1.2V 1.6V 2.0V 2.4V
I(R1)
10mA
100mA
1.0A
10A
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
V1
0Vdc
R1
0.01m
0
D1
CMH08

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Comparison Graph
Circuit Simulation Result
Simulation Result
Ifwd (A)
Vfwd (V)
%Error
Measurement Simulation
0.1 0.970 0.957 -1.34
0.5 1.100 1.087 -1.18
1 1.200 1.183 -1.42
2 1.300 1.282 -1.38
5 1.510 1.488 -1.46
10 1.810 1.789 -1.16

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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V(N11360)
1.0V 10V 30V
I(V2)/(400V/1u)
1.0p
10p
100p
Capacitance Characteristic
Circuit Simulation Result
Evaluation Circuit
0
V1
TD = 0
TF = 10ns
PW = 20us
PER = 10us
V1 = 0
TR = 1us
V2 = 400
V2
0Vdc
D2
CMH08

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Comparison Graph
Circuit Simulation Result
Simulation Result
Vrev (V)
Cj (pF)
%Error
Measurement Simulation
1 25.000 24.930 -0.28
2 19.500 19.706 1.06
5 14.000 13.902 -0.70
10 10.500 10.469 -0.30
15 9.000 8.833 -1.86
20 7.750 7.826 0.98
30 6.500 6.598 1.51

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Time
19.88us 19.96us 20.04us 20.12us 20.20us 20.28us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj ns 13.60 13.55 -0.37
V1
TD = 40ns
TF = 6ns
PW = 20us
PER = 50us
V1 = -9.1V
TR = 5ns
V2 = 11V
R1
50
0
D1
CMH08

9. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Reverse Recovery Characteristic Reference
Trj =13.6(ns)
Trb= 13.6(ns)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50
Relation between trj and trb
Example