FREE SPICE MODEL of CMH08 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: CMH08
MANUFACTURER: TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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2. SPICE MODEL
*$
* P ART NUMBER: CMH08
* M ANUF ACTURER: TOSHIB A
* All Rights Reserved Copyright ( C) Bee Technologies Inc. 2008
.MODEL CMH08 D
+ IS=7.9696E-9
+ N=2.2558
+ RS=47.560E- 3
+ IKF=.3713
+ CJO=43.038E-12
+ M=.43077
+ VJ=.3905
+ ISR=100.00E-12
+ BV=400
+ IBV=10.000E-6
+ ISR=0
+ TT=25.000E-9
*$
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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3. DIODE MODEL PARAMETERS
PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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4. Forward Current Characteristic
Circuit Simulation Result
10A
1.0A
100mA
10mA
0.4V 0.8V 1.2V 1.6V 2.0V 2.4V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc D1
CMH08
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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5. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd (V)
Ifwd (A) %Error
Measurement Simulation
0.1 0.970 0.957 -1.34
0.5 1.100 1.087 -1.18
1 1.200 1.183 -1.42
2 1.300 1.282 -1.38
5 1.510 1.488 -1.46
10 1.810 1.789 -1.16
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6. Capacitance Characteristic
Circuit Simulation Result
100p
10p
1.0p
1.0V 10V 30V
I(V2)/(400V/1u)
V(N11360)
Evaluation Circuit
V2
0Vdc
V2 = 400 V1
V1 = 0 D2
TD = 0 CMH08
TR = 1us
TF = 10ns
PW = 20us
PER = 10us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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7. Comparison Graph
Circuit Simulation Result
Simulation Result
Cj (pF)
Vrev (V) %Error
Measurement Simulation
1 25.000 24.930 -0.28
2 19.500 19.706 1.06
5 14.000 13.902 -0.70
10 10.500 10.469 -0.30
15 9.000 8.833 -1.86
20 7.750 7.826 0.98
30 6.500 6.598 1.51
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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8. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
19.88us 19.96us 20.04us 20.12us 20.20us 20.28us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.1V V1
V2 = 11V D1
TD = 40ns
TR = 5ns CMH08
TF = 6ns
PW = 20us
PER = 50us
0
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj ns 13.60 13.55 -0.37
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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9. Reverse Recovery Characteristic Reference
Trj =13.6(ns)
Trb= 13.6(ns)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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